2001.pdf 데이터시트 (총 1 페이지) - 파일 다운로드 2001 데이타시트 다운로드

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MCC
  omponents
20736 Marilla Street Chatsworth

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$ %    !"#
Features
Capable of 0.6Watts of Power Dissipation.
Collector-current 0. 7A
Collector-base Voltage 30V
Operating and storage junction temperature range: -55OC to +150OC
Pin Configuration
Bottom View
EC B
2SC2001
NPN Silicon
Plastic-Encapsulate
Transistor
TO-92
A
E
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
OFF CHARACTERISTICS
Min Max Units
V (BR)CEO
Collector-Emitter Breakdown Voltage
(I C=10mAdc, IB=0)
V(BR)CBO
Collector-Base Breakdown Voltage
(I C=100uAdc, IE=0)
V(BR)EBO
Emitter-Base Breakdown Voltage
(I E=100uAdc, IC=0)
ICBO Collector Cutoff Current
(VCB=30Vdc, IE=0)
ICEO Collector Cutoff Current
(VCE=20Vdc, IE=0)
IEBO Emitter Cutoff Current
(V EB=5.0Vdc, IC=0)
ON CHARACTERISTICS
25 --- Vdc
30 --- Vdc
5.0 --- Adc
--- 0.1 uAdc
---- 0.1 Vdc
--- 0.1 uAdc
hFE
V CE(sat)
V(BE)sat
fT
DC Current Gain
(I C=100mAdc, VCE=1.0Vdc)
Collector-Emitter Saturation Voltage
(I C=700mAdc, IB=70mAdc)
Base-Emitter Saturation Voltage
(I C=700mAdc, IB=70mAdc)
Transition Frequency
(VCE=6.0Vdc, IC=10mAdc, f=30MHz)
90 400 ---
--- 0.6 Vdc
--- 1.2 Vdc
50 --- MHz
CLASSIFICATION OF HFE
Rank
Range
M
90-180
L
135-270
K
200-400
B
C
D
G
DIMENSIONS
INCHES
MM
DIM MIN
A .175
B .175
C .500
D .016
E .135
G .095
MAX MIN MAX NOTE
.185 4.45 4.70
.185 4.46 4.70
--- 12.7 ---
.020 0.41 0.63
.145 3.43 3.68
.105 2.42 2.67
Revision: 2
www.mccsemi.com
2003/04/30