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N-Channel MOSFET
Features
RDS(on) (Max 0.45 )@VGS=10V
Gate Charge (Typical 26nC)
Improved dv/dt Capability
High ruggedness
100% Avalanche Tested
1.Gate
2.Drain
3.Source
General Description
This N-channel enhancement mode field-effect power transistor
using DI semiconductor’s advanced planar stripe, DMOS technol-
ogy intended for off-line switch mode power supply.
Also, especially designed to minimize rds(on) , low gate charge
and high rugged avalanche characteristics.
The TO-220 pkg is well suited for DC-DC converter in color-
monitor system.
DFP634
BVDSS = 250V
RDS(ON) = 0.45 ohm
ID = 8.1A
TO-220
123
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
EAR
dv/dt
PD
TSTG, TJ
TL
Parameter
Drain to Source Voltage
Continuous Drain Current(@TC = 25°C)
Continuous Drain Current(@TC = 100°C)
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation(@TC = 25 °C)
Derating Factor above 25 °C
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case to Sink
Thermal Resistance, Junction-to-Ambient
Min.
-
-
-
(Note 1)
(Note 2)
(Note 1)
(Note 3)
Value
250
8.1
5.1
32
±30
300
7.4
4.8
74
0.78
- 55 ~ 150
300
Value
Typ.
-
0.5
-
Max.
1.7
-
62.5
Nov, 2004. Rev. 0.
Copyright@ D&I Semiconductor Co., Ltd., Korea . All rights reserved.
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
1/7

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DFP634
Electrical Characteristics ( TC = 25 °C unless otherwise noted )
Symbol
Parameter
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
BVDSS/ Breakdown Voltage Temperature
TJ coefficient
IDSS Drain-Source Leakage Current
IGSS
Gate-Source Leakage, Forward
Gate-source Leakage, Reverse
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(ON)
Static Drain-Source On-state Resis-
tance
Dynamic Characteristics
Ciss Input Capacitance
Coss
Crss
Output Capacitance
Reverse Transfer Capacitance
Dynamic Characteristics
td(on)
tr
td(off)
tf
Qg
Qgs
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Qgd Gate-Drain Charge(Miller Charge)
Test Conditions
VGS = 0V, ID = 250uA
ID = 250uA, referenced to 25 °C
VDS = 250V, VGS = 0V
VDS = 200V, TC = 125 °C
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
VDS = VGS, ID = 250uA
VGS =10 V, ID = 4A
VGS =0 V, VDS =25V, f = 1MHz
VDD =125V, ID =8.1A, RG =25
see fig. 13.
(Note 4, 5)
VDS =200V, VGS =10V, ID =8.1A
see fig. 12.
(Note 4, 5)
Min
250
-
-
-
-
-
2.0
-
-
-
-
-
-
-
-
-
-
-
Typ Max Units
-
0.35
-
-
-
-
-
-
1
10
100
-100
V
V/°C
uA
uA
nA
nA
- 4.0
0.35 0.45
V
550 720
166 215
30 40
pF
40 52
70 90
96 125
ns
26 34
26 34
12 - nC
5-
Source-Drain Diode Ratings and Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
Integral Reverse p-n Junction
Diode in the MOSFET
IS =8.1A, VGS =0V
IS=8.1A, VGS=0V, dIF/dt=100A/us
NOTES
1. Repeativity rating : pulse width limited by junction temperature
2. L = 4.5mH, IAS =8.1A, VDD = 50V, RG = 50 , Starting TJ = 25°C
3. ISD 8.1A, di/dt 300A/us, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse Width 300us, Duty Cycle 2%
5. Essentially independent of operating temperature.
Min.
-
-
-
-
-
Typ.
-
-
-
170
0.9
Max.
8.1
32
1.5
-
-
Unit.
A
V
ns
uC
2/7

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DFP634
Fig 1. On-State Characteristics
Top :
VGS
15.0 V
10.0 V
101
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
Bottom : 5.0 V
100
Notes :
1. 250µ s Pulse Test
2. TC = 25
10-1
100
101
VDS, Drain-Source Voltage [V]
Fig 3. On Resistance Variation vs.
Drain Current and Gate Voltage
2.0
1.5
Fig 2. Transfer Characteristics
101
100
10-1
2
150oC
25oC
-55oC
Notes :
1. VDS = 30V
2. 250µ s Pulse Test
3 4 5 6 7 8 9 10
VGS, Gate-Source Voltage [V]
Fig 4. On State Current vs.
Allowable Case Temperature
101
1.0 VGS = 10V
0.5
VGS = 20V
0.0
0
Note : TJ = 25
6 12 18 24
ID, Drain Current [A]
Fig 5. Capacitance Characteristics
( Non-Repetitive )
1250
1000
Coss
Ciss=Cgs+Cgd(Cds=shorted)
Coss=Cds+Cgd
Crss=Cgd
Notes :
1. VGS = 0V
2. f=1MHz
750
Ciss
500
250
0
0
Crss
5 10 15 20 25 30
VDS, Drain-Source Voltage [V]
35
40
3/7
100
150 25
Notes :
1. VGS = 0V
2. 250µ s Pulse Test
10-1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD, Source-Drain voltage [V]
Fig 6. Gate Charge Characteristics
12
10 VDS = 200V
VDS = 125V
8 VDS = 50V
6
4
2
Note : ID = 8.1 A
0
0 5 10 15 20 25 30
QG, Total Gate Charge [nC]

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DFP634
Fig 7. Breakdown Voltage Variation
vs. Junction Temperature
1.2
Fig 8. On-Resistance Variation
vs. Junction Temperature
3.0
2.5
1.1
2.0
1.0 1.5
0.9 Notes :
1. VGS = 0 V
2. ID = 250 µ A
0.8
-100
-50 0 50 100 150
TJ, Junction Temperature [oC]
Fig 9. Maximum Safe Operating Area
200
102
Operation in This Area
is Limited by R DS(on)
100 µs
101 1 ms
10 ms
1.0
0.5
0.0
-100
Notes :
1. VGS = 10 V
2. ID = 4.1 A
-50 0
50 100 150
TJ, Junction Temperature [oC]
200
Fig 10. Maximum Drain Current
vs. Case Temperature
10
8
6
100
10-1
100
DC
Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
101 102
VDS, Drain-Source Voltage [V]
103
4
2
0
25 50 75 100 125 150
TC' Case Temperature [oC]
Fig 11. Transient Thermal Response Curve
4/7
100 D =0.5
0.2
0.1
1 0 -1
0.05
0.02
0.01
single pulse
N otes :
1 . Z θ JC( t) = 1 .7 /W M a x .
2. D uty F actor, D = t1/t2
3 . T JM - T C = P D M * Z θ JC( t)
1 0 -2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t1, S q u are W ave P ulse D u ratio n [sec]
101

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Fig. 12. Gate Charge Test Circuit & Waveforms
DFP634
12V 200nF 50KO
Same Type
as DUT
VGS
300nF
VGS
VDS
Qgs
DUT
1mA
Qg
Qgd
Charge
Fig 13. Switching Time Test Circuit & Waveforms
VDS
10V
Pulse
RG
Generator
RL
VDD
(0.5 rated VDS)
DUT
VDS 90%
Vin 10%
td(on)
tr
ton
td(off)
tf
toff
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
10V
VDS
ID
RG
L
DUT
VDD
1 BVDSS
EAS = LL IAS2
2 BVDSS - VDD
BVDSS
IAS
ID(t)
tp
VDS(t)
Time
5/7