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® STPS745D/F/G/FP
POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS
IF(AV)
VRRM
Tj (max)
VF (max)
7.5 A
45 V
175 °C
0.57 V
FEATURES AND BENEFITS
s VERY SMALL CONDUCTION LOSSES
s NEGLIGIBLE SWITCHING LOSSES
s EXTREMELY FAST SWITCHING
s INSULATED PACKAGE: ISOWATT220AC,
TO-220FPAC
Insulating voltage = 2000V DC
Capacitance = 12pF
s AVALANCHE CAPABILITY SPECIFIED
DESCRIPTION
Single Schottky rectifier suited for Switch Mode
Power Supply and high frequency DC to DC con-
verters.
Packaged either in TO-220AC, ISOWATT220AC,
TO-220FPAC or D2PAK, this device is intended
for use in low voltage, high frequency inverters,
free wheeling and polarity protection applications.
A
K
TO-220AC
STPS745D
K
A
K
ISOWATT220AC
STPS745F
A
NC
D2PAK
STPS745G
A
K
TO-220FPAC
STPS745FP
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
Value Unit
VRRM
IF(RMS)
IF(AV)
Repetitive peak reverse voltage
RMS forward current
Average forward current
δ = 0.5
TO-220AC /
D2PAK
ISOWATT220AC/
TO-220FPAC
Tc = 160°C
Tc = 145°C
45
20
7.5
V
A
A
IFSM
IRRM
IRSM
PARM
Tstg
Tj
Surge non repetitive forward current tp = 10 ms sinusoidal
Repetitive peak reverse current
tp = 2 µs square F = 1kHz
Non repetitive peak reverse current tp = 100 µs square
Repetitive peak avalanche power tp = 1µs Tj = 25°C
Storage temperature range
Maximum operating junction temperature *
150
1
2
2700
- 65 to + 175
175
A
A
A
W
°C
°C
dV/dt Critical rate of rise of reverse voltage
10000 V/µs
* : dPtot <
1 thermal runaway condition for a diode on its own heatsink
dTj Rth( j a)
July 2003 - Ed: 6G
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STPS745D/F/G/FP
THERMAL RESISTANCES
Symbol
Parameter
Rth (j-c) Junction to case
TO-220AC / D2PAK
ISOWATT220AC/
TO-220FPAC
Value
3.0
5.5
Unit
°C/W
STATIC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
IR * Reverse leakage current
VF * Forward voltage drop
Tests Conditions
Tj = 25°C
VR = VRRM
Tj = 125°C
Tj = 125°C IF = 7.5 A
Tj = 25°C
IF = 15 A
Tj = 125°C IF = 15 A
Pulse test : * tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation :
P = 0.42 x IF(AV) + 0.020 IF2(RMS)
Min. Typ. Max.
100
5 15
0.5 0.57
0.84
0.65 0.72
Unit
µA
mA
V
Fig. 1: Average forward power dissipation versus
average forward current.
Fig. 2: Average current versus ambient
temperature (δ = 0.5).
PF(av)(W)
6
δ = 0.1
5 δ = 0.05
δ = 0.2
4
δ = 0.5
δ=1
3
2T
1
IF(av) (A)
δ=tp/T
tp
0
0 1 2 3 4 5 6 7 8 9 10
IF(av)(A)
9
8
7
6
5
Rth(j-a)=40°C/W
4
3
T
2
1
δ=tp/T
0
0 25
tp
50
Rth(j-a)=Rth(j-c)
TO-220AC
ISOWATT220AB
Rth(j-a)=15°C/W
Tamb(°C)
75 100 125 150 175
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STPS745D/F/G/FP
Fig. 3: Normalized avalanche power derating
versus pulse duration.
Fig. 4: Normalized avalanche power derating
versus junction temperature.
PARM(tp)
PARM(1µs)
1
0.1
0.01
0.001
0.01
0.1
tp(µs)
1 10
PARM(tp)
PARM(25°C)
1.2
1
0.8
0.6
0.4
0.2
Tj(°C)
0
100 1000
0 25 50 75 100 125 150
Fig. 5-1: Non repetitive surge peak forward
current versus overload duration (maximum
values) (TO-220AC and D2PAK).
IM(A)
120
100
80
60
40
IM
20
t
δ=0.5
t(s)
0
1E-3
1E-2
1E-1
Tc=50°C
Tc=100°C
Tc=150°C
1E+0
Fig. 5-2: Non repetitive surge peak forward
current versus overload duration (maximum
values) (ISOWATT220AC/TO-220FPAC).
IM(A)
80
70
60
50
40
30
20 IM
10
0
1E-3
t
δ=0.5
1E-2
t(s)
1E-1
Tc=50°C
Tc=100°C
Tc=150°C
1E+0
Fig. 6-1: Relative variation of thermal transient
impedance junction to case versus pulse duration
(TO-220AC and D2PAK).
Zth(j-c)/Rth(j-c)
1.0
0.8
0.6 δ = 0.5
0.4
0.2 δ = 0.2
δ = 0.1
Single pulse
0.0
1E-4
1E-3
tp(s)
1E-2
T
δ=tp/T
1E-1
tp
1E+0
Fig. 6-2: Relative variation of thermal transient
impedance junction to case versus pulse duration
(ISOWATT220AC/TO-220FPAC).
Zth(j-c)/Rth(j-c)
1.0
0.8
0.6 δ = 0.5
0.4
0.2 δ = 0.2
δ = 0.1
Single pulse
0.0
1E-3
1E-2
tp(s)
1E-1
T
δ=tp/T
1E+0
tp
1E+1
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STPS745D/F/G/FP
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values).
Fig. 8: Junction capacitance versus reverse
voltage applied (typical values).
IR(µA)
5E+4
1E+4
1E+3
1E+2
1E+1
1E+0
1E-1
05
Tj=150°C
Tj=125°C
Tj=100°C
Tj=75°C
Tj=50°C
Tj=25°C
VR(V)
10 15 20 25 30 35 40 45
C(pF)
1000
500
200
100
1
2
F=1MHz
Tj=25°C
VR(V)
5 10
20
50
Fig. 9: Forward voltage drop versus forward
current (maximum values).
IFM(A)
100.0
10.0
Tj=125°C
Typical values
Tj=25°C
1.0
Tj=125°C
VFM(V)
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Fig. 10: Thermal resistance junction to ambient
versus copper surface under tab (Epoxy printed
circuit board, copper thickness: 35µm).
Rth(j-a) (°C/W)
80
70
60
50
40
30
20
10
0
0246
S(Cu) (cm²)
8 10 12 14 16 18 20
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STPS745D/F/G/FP
PACKAGE MECHANICAL DATA
D2PAK (Plastic)
L2
L
L3
A
E
C2
D
A1
B2
B
G
CR
A2
M*
V2
* FLAT ZONE NO LESS THAN 2mm
REF.
A
A1
A2
B
B2
C
C2
D
E
G
L
L2
L3
M
R
V2
DIMENSIONS
Millimeters
Inches
Min. Max. Min. Max.
4.40 4.60 0.173 0.181
2.49 2.69 0.098 0.106
0.03 0.23 0.001 0.009
0.70 0.93 0.027 0.037
1.14 1.70 0.045 0.067
0.45 0.60 0.017 0.024
1.23 1.36 0.048 0.054
8.95 9.35 0.352 0.368
10.00 10.40 0.393 0.409
4.88 5.28 0.192 0.208
15.00 15.85 0.590 0.624
1.27 1.40 0.050 0.055
1.40 1.75 0.055 0.069
2.40 3.20 0.094 0.126
0.40 typ.
0.016 typ.
0° 8° 0° 8°
FOOTPRINT DIMENSIONS (in millimeters)
16.90
10.30
8.90
5.08
1.30
3.70
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