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MOTOROLA
www.DSatEaSMheICetO4UN.cDomUCTOR TECHNICAL DATA
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by MRF282/D
The RF Sub–Micron MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for class A and class AB PCN and PCS base station applications at
frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier
amplifier applications.
Specified Two–Tone Performance @ 2000 MHz, 26 Volts
Output Power = 10 Watts (PEP)
Power Gain = 11 dB
Efficiency = 30%
Intermodulation Distortion = –30 dBc
Specified Single–Tone Performance @ 2000 MHz, 26 Volts
Output Power = 10 Watts (CW)
Power Gain = 11 dB
Efficiency = 40%
Characterized with Series Equivalent Large–Signal
Impedance Parameters
S–Parameter Characterization at High Bias Levels
Excellent Thermal Stability
Capable of Handling 10:1 VSWR, @ 26 Vdc,
2000 MHz, 10 Watts (CW) Output Power
Gold Metallization for Improved Reliability
MRF282S
MRF282Z
10 W, 2000 MHz, 26 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 458–03, STYLE 1
(MRF282S)
CASE 458A–01, STYLE 1
(MRF282Z)
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0, ID = 10 µAdc)
Zero Gate Voltage Drain Current
(VDS = 28 Vdc, VGS = 0)
Gate–Source Leakage Current
(VGS = 20 Vdc, VDS = 0)
V(BR)DSS
IDSS
IGSS
Symbol
VDSS
VGS
PD
Tstg
TJ
Symbol
RθJC
Min
65
Value
65
± 20
60
0.34
– 65 to +150
200
Max
2.9
Typ Max
——
— 1.0
— 1.0
Unit
Vdc
Vdc
Watts
W/°C
°C
°C
Unit
°C/W
Unit
Vdc
µAdc
µAdc
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 1
©MMOotTorOolRa,OInLc.A19R97F DEVICE DATA
MRF282S MRF282Z
1

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ELECTRICAL CHARACTERISTICS continued (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 50 µAdc)
Drain–Source On–Voltage
(VGS = 10 Vdc, ID = 0.5 Adc)
Forward Transconductance
(VDS = 10 Vdc, ID = 0.5 Adc)
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 75 mAdc)
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 26 Vdc, VGS = 0, f = 1.0 MHz)
Output Capacitance
(VDS = 26 Vdc, VGS = 0, f = 1.0 MHz)
Reverse Transfer Capacitance
(VDS = 26 Vdc, VGS = 0, f = 1.0 MHz)
FUNCTIONAL TESTS (In Motorola Test Fixture)
Common–Source Power Gain
(VDD = 26 Vdc, Pout = 10 W (PEP), IDQ = 75 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
VGS(th)
2.0
3.0
4.0
Vdc
VDS(on)
0.4
0.6 Vdc
gfs
0.5 0.7
S
VGS(q)
3.0
4.0
5.0
Vdc
Ciss
Coss
Crss
— 15 —
— 8.0 —
— 0.45 —
pF
pF
pF
Gps 11 12.6 — dB
Drain Efficiency
(VDD = 26 Vdc, Pout = 10 W (PEP), IDQ = 75 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
η 30 34 — %
Intermodulation Distortion
(VDD = 26 Vdc, Pout = 10 W (PEP), IDQ = 75 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
IMD
–32.5
–30
dBc
Input Return Loss
(VDD = 26 Vdc, Pout = 10 W (PEP), IDQ = 75 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
IRL 10 14 — dB
Common–Source Power Gain
(VDD = 26 Vdc, Pout = 10 W (PEP), IDQ = 75 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
Gps 11 12.6 — dB
Drain Efficiency
(VDD = 26 Vdc, Pout = 10 W (PEP), IDQ = 75 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
η — 30 — %
Intermodulation Distortion
(VDD = 26 Vdc, Pout = 10 W (PEP), IDQ = 75 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
IMD
— –32.5 —
dBc
Input Return Loss
(VDD = 26 Vdc, Pout = 10 W (PEP), IDQ = 75 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
IRL 10 14 — dB
Common–Source Power Gain
Gps 11 12.3 — dB
(VDD = 26 Vdc, Pout = 10 W CW, IDQ = 75 mA, f = 2000.0 MHz)
Drain Efficiency
η 40 45 — %
(VDD = 26 Vdc, Pout = 10 W CW, IDQ = 75 mA, f = 2000.0 MHz)
Output Mismatch Stress
(VDD = 26 Vdc, Pout = 10 W CW, IDQ = 75 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz, Load VSWR = 10:1,
All Phase Angles at Frequency of Test)
Ψ
No Degradation In Output Power
MRF282S MRF282Z
2
MOTOROLA RF DEVICE DATA

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VGG
+
C1
B1
R1
B2
C3
R2
B3
C5
R3
C8
C9
B4
C10
C11 R4
B5
C14 R5
B6
C15 R6
VDD
+
C17
RF
INPUT
C2
L2
Z1 Z2 Z3
Z4 Z5
Z6
C4
L1
C6
C7
L3
Z7 Z8
Z9
C12
DUT
C13
Z10
L4
RF
OUTPUT
C16
B1, B2, B3,
B4, B5, B6
C1, C17
C2, C4, C12
C3, C15
C5, C14
C6, C8, C10, C13
C7
C9, C11
C16
L1
L2
L3
L4
Ferrite Bead, Ferroxcube, 56–590–65–3B
470 µF, Electrolytic Capacitor, Mallory
0.6–4.5 pF, Variable Capacitor, Johanson
0.1 µF, Chip Capacitor, Kemet
1000 pF, B Case Chip Capacitor, ATC
12 pF, B Case Chip Capacitor, ATC
1.8 pF, B Case Chip Capacitor, ATC
100 pF, B Case Chip Capacitor, ATC
0.4–2.5 pF, Variable Capacitor, Johanson
Straight Wire, 21 AWG, 0.3
8 Turns, 0.042ID, 24 AWG, Enamel
9 Turns, 0.046ID, 26 AWG, Enamel
3 Turns, 0.048ID, 25 AWG, Enamel
R1, R2, R3, 12 , 0.2 W Chip Resistor, Rohm
R4, R5, R6
Z1 0.155x 0.08Microstrip
Z2 0.280x 0.08Microstrip
Z3 0.855x 0.08Microstrip
Z4 0.483x 0.08Microstrip
Z5 0.200x 0.330Microstrip
Z6 0.220x 0.330Microstrip
Z7 0.490x 0.330Microstrip
Z8 0.510x 0.08Microstrip
Z9 0.990x 0.08Microstrip
Z10
Board
0.295x 0.08Microstrip
35 Mils Glass Teflon®, Arlon GX–300,
εr = 2.55
Input/Output Connectors Type N Flange Mount
Figure 1. Schematic of 1.93 – 2.0 GHz Broadband Test Circuit
MOTOROLA RF DEVICE DATA
MRF282S MRF282Z
3

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R1
+
VGG
(BIAS)
+ B1
C1
R2
B2
C4
R3
B3
C7
C5 C8 C14 C11
R4
B5
C10
R5
B4
C13
R6
B6 +
C16
DC
SUPPLY
+
VDD
RF
INPUT
Z1
L1
Z2
L2
Z3 Z4
C6 Z5
L3
Z6
DUT
Z7
C2 C3
C9
L4 L5
Z8 Z9
Z10 Z11
RF
C12 C15
OUTPUT
C17
B1, B2, B3,
B4, B5, B6
C1, C16
C2, C9, C12
C3
C4, C13
C5, C14
C6, C8, C11, C15
C7, C10
C17
L1
L2
L3, L4
L5
Ferrite Bead, Fair Rite, (2743021446)
470 µF, 63 V, Electrolytic Capacitor, Mallory
0.6–4.5 pF, Variable Capacitor, Johanson Gigatrim
0.8–4.5 pF, Variable Capacitor, Johanson Gigatrim
0.1 µF, Chip Capacitor
100 pF, B Case Chip Capacitor, ATC
12 pF, B Case Chip Capacitor, ATC
1000 pF, B Case Chip Capacitor, ATC
0.1 pF, B Case Chip Capacitor, ATC
3 Turns, 27 AWG, 0.087OD, 0.050ID,
0.053Long, 6.0 nH
5 Turns, 27 AWG, 0.087OD, 0.050ID,
0.091Long, 15 nH
9 Turns, 26 AWG, 0.080OD, 0.046ID,
0.170Long, 30.8 nH
4 Turns, 27 AWG, 0.087OD, 0.050ID,
0.078Long, 10 nH
R1, R2, R3,
R4, R5, R6
W1, W2
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Z10
Z11
Board
12 , 1/8 W Fixed Film Chip Resistor,
0.08x 0.13
Berrylium Copper, 0.010x 0.110x 0.210
0.122x 0.08Microstrip
0.650x 0.08Microstrip
0.160x 0.08Microstrip
0.030x 0.08Microstrip
0.045x 0.08Microstrip
0.291x 0.08Microstrip
0.483x 0.330Microstrip
0.414x 0.330Microstrip
0.392x 0.08Microstrip
0.070x 0.08Microstrip
1.110x 0.08Microstrip
1 = 0.03 Glass Teflon®, Arlon GX–0300–55–22,
2 oz Copper, 3 x 5Dimenson, 0.030, εr = 2.55
Figure 2. Schematic of 1.81 – 1.88 GHz Broadband Test Circuit
MRF282S MRF282Z
4
MOTOROLA RF DEVICE DATA

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VGG
R1 R5
R2 Q1
R3
R4
Q2
R6
+
C1
VDD
+
R7
C2 C4 C5 C6
B1
R8 C8 C9
B2 B3
C13 + VDD
R9 C16
R10 C18 C20
C14
L2
RF
INPUT
Z1
C3
L1
Z2 Z3
C7 C10
DUT
Z4
Z5 Z6 Z7
Z8
C11 C12
C15
C17
Z9 RF
OUTPUT
C19
B1, B2, B3,
C1, C20
C2
C3, C10, C15
C4, C16
C5
C6, C7, C9,
C14, C17
C8, C13
C11, C12
C18
C19
L1
L2
Q1
Q2
R1
Ferrite Bead, Ferroxcube, 56–590–65–3B
470 µF, 63 V, Electrolytic Capacitor, Mallory
0.01 µF, B Case Chip Capacitor, ATC
0.6–4.5 pF, Variable Capacitor, Johanson
0.02 µF, B Case Chip Capacitor, ATC
100 µF, 50 V, Electrolytic Capacitor, Sprague
12 pF, B Case Chip Capacitor, ATC
51 pF, B Case Chip Capacitor, ATC
0.3 pF, B Case Chip Capacitor, ATC
0.1 µF, Chip Capacitor, Kemet
0.4–2.5 pF, Variable Capacitor, Johanson
8 Turns, 0.042ID, 24 AWG, Enamel
9 Turns, 0.046ID, 26 AWG, Enamel
NPN, 15 W, Bipolar Transistor, MJD310
PNP, 15 W, Bipolar Transistor, MJD320
200 , Axial, 1/4 W Resistor
R2
R3
R4, R6, R7
R5
R8, R9, R10
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Board
Input/Output
1.0 k, 1/2 W Potentiometer
13 k, Axial, 1/4 W Resistor
390 , 1/8 W Chip Resistor, Rohm
1.0 , 10 W 1% Resistor, DALE
12 , 1/8 W Chip Resistor, Rohm
0.624x 0.08Microstrip
0.725x 0.08Microstrip
0.455x 0.08Microstrip
0.530x 0.330Microstrip
0.280x 0.330Microstrip
0.212x 0.330Microstrip
0.408x 0.08Microstrip
0.990x 0.08Microstrip
0.295x 0.08Microstrip
35 Mils Glass Teflon®, Arlon GX–0300, εr = 2.55
Type N Flange Mount RF55–22, Connectors,
Omni Spectra
Figure 3. Schematic of Class A Test Circuit
MOTOROLA RF DEVICE DATA
MRF282S MRF282Z
5