D10PF06.pdf 데이터시트 (총 9 페이지) - 파일 다운로드 D10PF06 데이타시트 다운로드

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STD10PF06
P-CHANNEL 60V - 0.18 - 10A IPAK/DPAK
STripFET™ II POWER MOSFET
TYPE
VDSS
RDS(on)
ID
STD10PF06
60 V < 0.20 10 A
s TYPICAL RDS(on) = 0.18
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s LOW GATE CHARGE
s APPLICATION ORIENTED
CHARACTERIZATION
s THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX “-1")
s SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX “T4")
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™" strip-
based process. The resulting transistor shows extremely
high packing density for low on-resistance, rugged
avalanche characteristics and less critical alignment
steps therefore a remarkable manufacturing
reproducibility.
APPLICATIONS
s MOTOR CONTROL
s DC-DC & DC-AC CONVERTERS
3
2
1
IPAK
TO-251
(Suffix “-1”)
3
1
DPAK
TO-252
(Suffix “T4”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM(•)
Drain Current (pulsed)
Ptot Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area.
Note: P-CHANNEL MOSFET actual polarity of voltages and current
has to be reversed
March 2002
.
Value
Unit
60 V
60 V
± 20 V
10 A
7A
40 A
40 W
0.27
W/°C
6 V/ns
-65 to 175
°C
175 °C
(1) ISD 10A, di/dt 300A/µs, VDD V(BR)DSS, Tj TJMAX
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STD10PF06
THERMAL DATA
Rthj-case
Rthj-amb
Tl
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose
Max
Max
3.75
100
275
°C/W
°C/W
°C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 25 V)
Max Value
10
125
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max.
V(BR)DSS Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
60
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating TC = 125°C
1
10
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20V
±1
Unit
V
µA
µA
µA
ON (*)
Symbol
VGS(th)
RDS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
VDS = VGS
ID = 250 µA
VGS = 10 V
ID = 5 A
Min.
2
Typ.
0.18
Max.
4
0.20
Unit
V
DYNAMIC
Symbol
gfs (*)
Ciss
Coss
Crss
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS = 25 V
ID=5 A
VDS = 25 V f = 1 MHz VGS = 0
Min.
2
Typ.
5
850
230
75
Max.
Unit
S
pF
pF
pF
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STD10PF06
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 30 V
ID = 5 A
RG = 4.7
VGS = 10 V
(Resistive Load, Figure 3)
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD= 48 V ID= 10 A VGS= 10 V
Min.
Typ.
20
40
16
4
6
Max.
21
Unit
ns
ns
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
td(off)
tf
Turn-off Delay Time
Fall Time
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 30 V
ID = 5 A
RG = 4.7Ω,
VGS = 10 V
(Resistive Load, Figure 3)
Vclamp = 48 V
ID = 10 A
RG = 4.7Ω,
VGS = 10 V
(Inductive Load, Figure 5)
Min.
Typ.
40
10
10
17
30
Max.
Unit
ns
ns
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
ISDM ()
Source-drain Current
Source-drain Current (pulsed)
VSD (*) Forward On Voltage
ISD = 10 A
VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(•)Pulse width limited by safe operating area.
ISD = 10 A
di/dt = 100A/µs
VDD = 30 V
Tj = 150°C
(see test circuit, Figure 5)
Min.
Typ.
100
260
5.2
Max.
10
40
2.5
Unit
A
A
V
ns
µC
A
Safe Operating Area
Thermal Impedance
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