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2SK3148
Silicon N Channel MOS FET
High Speed Power Switching
Features
Low on-resistance
RDS = 45 mtyp.
High speed switching
4 V gate drive device can be driven from 5 V source
Outline
TO–220FM
ADE-208-748A (Z)
2nd. Edition
February 1999
D
G
S
123
1. Gate
2. Drain
3. Source

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2SK3148
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Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
VDSS
VGSS
ID
I Note1
D(pulse)
I DR
I Note3
AP
E Note3
AR
Pch Note2
Channel temperature
Tch
Storage temperature
Tstg
Note:
1. PW 10 µs, duty cycle 1%
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg 50
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown voltage V(BR)DSS
Gate to source breakdown voltage V(BR)GSS
Gate to source leak current
I GSS
Zero gate voltege drain current
I DSS
Gate to source cutoff voltage
VGS(off)
Static drain to source on state
RDS(on)
resistance
RDS(on)
Forward transfer admittance
|yfs|
Input capacitance
Ciss
100
±20
1.0
9
Output capacitance
Coss —
Reverse transfer capacitance
Crss —
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse
recovery time
t d(on)
tr
t d(off)
tf
VDF
t rr
Note: 4. Pulse test
Typ
45
65
15
840
350
180
15
120
200
150
0.9
90
Ratings
100
±20
20
60
20
20
40
30
150
–55 to +150
Max Unit
—V
—V
±10 µA
10 µA
2.5 V
60 m
85 m
—S
— pF
— pF
— pF
— ns
— ns
— ns
— ns
—V
— ns
Unit
V
V
A
A
A
A
mJ
W
°C
°C
Test Conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
VDS = 100 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 10 A, VGS = 10 VNote4
ID = 10 A, VGS = 4 V Note4
ID = 10 A, VDS = 10 V Note4
VDS = 10 V
VGS = 0
f = 1 MHz
ID = 10 A, VGS = 10 V
RL = 3
IF = 20 A, VGS = 0
IF = 20 A, VGS = 0
diF/ dt = 50 A/ µs
2

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Main Characteristics
2SK3148
Power vs. Temperature Derating
40
30
20
10
0 50 100 150 200
Case Temperature Tc (°C)
Maximum Safe Operation Area
500
100
30
10
3
1
0.3
OthpisDeCararOetPpioaeWrnais=tiio1nn0(mTcs=(12s51h°1Cmo0)ts)01µ0sµs
limited by R DS(on)
0.1 Ta = 25 °C
0.05
0.5 1 2 5 10 20 50 100 200 500
Drain to Source Voltage V DS (V)
Typical Output Characteristics
20
4 V 3.5 V
16 10 V
6V
Pulse Test
12
3V
8
4 VGS =2.5 V
0 2 4 6 8 10
Drain to Source Voltage V DS (V)
Typical Transfer Characteristics
20
V DS = 10 V
Pulse Test
16
12
8
Tc = 75°C
4
–25°C
25°C
0 1 23 45
Gate to Source Voltage V GS (V)
3

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Drain to Source Saturation Voltage vs.
Gate to Source Voltage
2.5
Pulse Test
2.0
1.5
1.0
I D = 15 A
0.5
10 A
5A
0 4 8 12 16 20
Gate to Source Voltage V GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
500
Pulse Test
200
100
VGS = 4 V
50
10 V
20
10
12
5 10 20 50 100
Drain Current I D (A)
Static Drain to Source on State Resistance
vs. Temperature
250
Pulse Test
200
150 5,10 A
15 A
100
50
0
–40
V GS = 4 V
10 V
15 A
5,10 A
0 40 80 120 160
Case Temperature Tc (°C)
Forward Transfer Admittance vs.
Drain Current
50
20
Tc = –25 °C
10
25 °C
75 °C
5
2
1
0.5
0.1
V DS = 10 V
Pulse Test
0.3 1 3 10 30 100
Drain Current I D (A)
4

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Body–Drain Diode Reverse
Recovery Time
500
di / dt = 50 A / µs
200 VGS = 0, Ta = 25°C
100
50
20
10
5
2
1
0.1 0.3 1 3 10 30 50
Reverse Drain Current I DR (A)
2SK3148
10000
5000
Typical Capacitance vs.
Drain to Source Voltage
2000
1000
500
Ciss
200 Coss
100
50
20 VGS = 0
f = 1 MHz
10
0 10 20
Crss
30 40 50
Drain to Source Voltage V DS (V)
Dynamic Input Characteristics
200
I D = 15 A
160
VDD = 100 V
50 V
25 V
VGS
120
VDS
80
20
16
12
8
40
VDD = 100 V
4
50 V
25 V
0
0 20 40 60 80 100
Gate Charge Qg (nc)
1000
500
200
100
Switching Characteristics
VGS = 10 V, V DD = 30 V
PW = 5 µs, duty < 1%
t d(off)
tf
50
tr
20
10
0.1 0.2
t d(on)
0.5 1 2
50 10 20
Drain Current I D (A)
5