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PD20015-E
PD20015S-E
RF power transistor - LdmoST family
Preliminary Data
Features
Excellent thermal stability
Common source configuration
POUT = 15 W with 11 dB gain @ 2 GHz / 13.6 V
Plastic package
ESD protection
In compliance with the 2002/95/EC european
directive
PowerSO-10RF
(formed lead)
Description
The PD20015-E is a common source N-channel,
enhancement-mode lateral field-effect RF power
transistor. It is designed for high gain, broadband
commercial and industrial applications. It
operates at 13.6 V in common source mode at
frequencies of up to 1 GHz. PD20015-E boasts
the excellent gain, linearity and reliability of ST’s
latest LDMOS technology mounted in the first true
SMD plastic RF power package, PowerSO-10RF.
PD20015-E’s superior linearity performance
makes it an ideal solution for mobile radio
applications.
The PowerSO-10 plastic package, designed to
offer high reliability, is the first ST JEDEC
approved, high power SMD package. It has been
specially optimized for RF needs and offers
excellent RF performances and ease of assembly.
Mounting recommendations are available in
www.st.com/ (look for application note AN1294)
PowerSO-10RF
(straight lead)
Figure 1. Pin connection
Source
Gate
Drain
Table 1. Device summary
Order code
PD20015-E
PD20015S-E
PD20015TR-E
PD20015STR-E
Package
PowerSO-10RF (formed lead)
PowerSO-10RF (straight lead)
PowerSO-10RF (formed lead)
PowerSO-10RF (straight lead)
Packing
Tube
Tube
Tape and reel
Tape and reel
December 2007
Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
1/15
www.st.com
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Contents
Contents
PD20015-E, PD20015S-E
1 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Static . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.2 Dynamic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.3 ESD protection characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.4 Moisture sensitivity level . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3 Impedance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
4 Typical performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
5 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
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PD20015-E, PD20015S-E
1 Electrical data
Electrical data
1.1
Maximum ratings
Table 2. Absolute maximum ratings (TCASE = 25 °C)
Symbol
Parameter
V(BR)DSS
VGS
ID
PDISS
TJ
TSTG
Drain-source voltage
Gate-source voltage
Drain current
Power dissipation (@ TC = 70 °C)
Max. operating junction temperature
Storage temperature
Value
40
-0.5 to +15
7
79
165
-65 to +150
Unit
V
V
A
W
°C
°C
1.2 Thermal data
Table 3. Thermal data
Symbol
Parameter
RthJC
Junction - case thermal resistance
Value
1.2
Unit
°C/W
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Electrical characteristics
2 Electrical characteristics
PD20015-E, PD20015S-E
2.1
2.2
2.3
2.4
TCASE = +25 oC
Static
Table 4. Static
Symbol
IDSS
IGSS
VGS(Q)
VDS(ON)
CISS
COSS
CRSS
VGS = 0 V
VGS = 20 V
VDS = 10 V
VGS = 10 V
VGS = 0 V
VGS = 0 V
VGS = 0 V
Dynamic
Test conditions
VDS = 25 V
VDS = 0 V
ID = TBD mA
ID = 1 A
VDS = 12.5 V
VDS = 12.5 V
VDS = 12.5 V
Min Typ Max Unit
f = 1 MHz
f = 1 MHz
f = 1 MHz
TBD
0.27
55
40
1.5
1
1
0.31
µA
µA
V
V
pF
pF
pF
Table 5. Dynamic
Symbol
Test conditions
P3dB VDD = 13.6 V, IDQ = 350 mA
f = 2 GHz
GP VDD = 13.6 V, IDQ = 350 mA, POUT = 15 W, f = 2 GHz
hD VDD = 13.6 V, IDQ = 350 mA, POUT = P3dB, f = 2 GHz
Load VDD = 15.5 V, IDQ = 350 mA, POUT = 20 W, f = 2 GHz
mismatch All phase angles
Min. Typ. Max. Unit
23
10 11
45 53
W
dB
%
20:1 VSWR
ESD protection characteristics
Table 6.
ESD protection characteristics
Test conditions
Human body model
Machine model
Class
2
M3
Moisture sensitivity level
Table 7.
Moisture sensitivity level
Test methodology
J-STD-020B
Rating
MSL 3
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PD20015-E, PD20015S-E
3 Impedance
Figure 2. Current conventions
Impedance
Table 8. Impedance data
Freq. (MHz)
2000
ZIN ()
TBD
ZDL()
TBD
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