IHW30N100R.pdf 데이터시트 (총 12 페이지) - 파일 다운로드 IHW30N100R 데이타시트 다운로드

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Soft Switching Series
IHW30N100R
q
Reverse Conducting IGBT with monolithic body diode
Features:
1.5V Forward voltage of monolithic body Diode
Full Current Rating of monolithic body Diode
Specified for TJmax = 175°C
Trench and Fieldstop technology for 1000 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- easy parallel switching capability due to positive
temperature coefficient in VCE(sat)
Low EMI
Qualified according to JEDEC1 for target applications
Pb-free lead plating; RoHS compliant
Applications:
Microwave Oven
Soft Switching Applications
C
G
E
PG-TO-247-3-21
Type
VCE
IC
VCE(sat),Tj=25°C
Tj,max
IHW30N100R 1000V 30A
1.5V
175°C
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area VCE 1200V, Tj 150°C
Diode forward current
TC = 25°C
TC = 100°C
Diode pulsed current, tp limited by Tjmax
Gate-emitter voltage
Transient Gate-emitter voltage (tp < 5 ms)
Power dissipation, TC = 25°C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Marking
H30R100
Symbol
VCE
IC
ICpuls
-
IF
IFpuls
VGE
Ptot
Tj
Tstg
-
Package
PG-TO-247-3-21
Value
1000
60
30
90
90
60
30
90
±20
±25
412
-40...+175
-55...+175
260
Unit
V
A
V
W
°C
°C
1 J-STD-020 and JESD-022
Power Semiconductors
1
Rev. 2 July 06

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Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction – case
Thermal resistance,
junction – ambient
Soft Switching Series
IHW30N100R
q
Symbol
RthJC
RthJCD
RthJA
Conditions
Max. Value
0.36
0.36
40
Unit
K/W
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Diode forward voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
V(BR)CES
VCE(sat)
VF
VGE(th)
ICES
VGE=0V, IC=500µA
VGE = 15V, IC=30A
Tj=25°C
Tj=150°C
Tj=175°C
VGE=0V, IF=30A
Tj=25°C
Tj=150°C
Tj=175°C
IC=700µA,VCE=VGE
VCE=1000V,
VGE=0V
Tj=25°C
Tj=175°C
IGES
gfs
VCE=0V,VGE=20V
VCE=20V, IC=30A
min.
1000
-
-
-
-
-
-
5.1
-
-
-
-
Value
Typ.
-
1.5
1.7
1.75
1.5
1.65
1.7
5.8
-
-
-
56
Unit
max.
-V
1.7
-
-
1.7
-
-
6.4
µA
5
2500
600
-
nA
S
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Ciss
Coss
Crss
QGate
Internal emitter inductance
LE
measured 5mm (0.197 in.) from case
VCE=25V,
VGE=0V,
f=1MHz
VCC=800V, IC=30A
VGE=15V
-
-
-
-
-
2791
82
78
209
13
- pF
-
-
- nC
- nH
Power Semiconductors
2
Rev. 2 July 06

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Soft Switching Series
IHW30N100R
q
Switching Characteristic, Inductive Load, at Tj=25 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(off)
tf
Eon
Eoff
Ets
Tj=25°C,
VCC=600V,IC=30A,
VGE=0/15V,
RG=26,
min.
-
-
-
-
-
Value
Typ.
846
33.3
-
2.1
-
Unit
max.
-
mJ
-
Switching Characteristic, Inductive Load, at Tj=175 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(off)
tf
Eon
Eoff
Ets
Tj=175°C
VCC=600V,
IC=30A,
VGE=0/15V,
RG= 26
min.
Value
Typ.
Unit
max.
- 948 -
- 40.4 -
- - - mJ
- 2.86 -
---
Power Semiconductors
3
Rev. 2 July 06

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Soft Switching Series
IHW30N100R
q
90A
80A
70A
TC=80°C
60A TC=110°C
50A
40A
30A Ic
20A
10A
0A
100Hz
1kHz
10kHz
100kHz
Figure 1.
f, SWITCHING FREQUENCY
Collector current as a function of
switching frequency for triangular
current (Eon = 0, hard turn-off)
(Tj 175°C, D = 0.5, VCE = 400V,
VGE = 0/+15V, RG = 26)
tp=1µs
20µs
10A
50µs
100µs
500µs
1A
DC 10ms
0.1A
1V
10V
100V
1000V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 2. Safe operating area
(D = 0, TC = 25°C, Tj 175°C;
VGE=15V)
400W
350W
300W
250W
200W
150W
100W
50W
0W
25°C 50°C 75°C 100°C 125°C 150°C
Figure 3.
TC, CASE TEMPERATURE
Power dissipation as a function of
case temperature
(Tj 175°C)
50A
40A
30A
20A
10A
0A
25°C
Figure 4.
75°C
125°C
TC, CASE TEMPERATURE
Collector current as a function of
case temperature
(VGE 15V, Tj 175°C)
Power Semiconductors
4
Rev. 2 July 06

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Soft Switching Series
IHW30N100R
q
80A VGE=20V
15V
60A 13V
11V
9V
40A
7V
20A
0A
0V 1V 2V 3V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic
(Tj = 25°C)
80A
VGE=20V
60A 15V
13V
11V
40A
9V
7V
20A
0A
0V 1V 2V 3V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristic
(Tj = 175°C)
80A
60A
40A
20A TJ=175°C
25°C
0A
0V 2V 4V 6V 8V 10V
VGE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristic
(VCE=20V)
2.5V
IC=60A
2.0V
1.5V
1.0V
IC=30A
IC=15A
0.5V
0.0V
-50°C 0°C 50°C 100°C 150°C
Figure 8.
TJ, JUNCTION TEMPERATURE
Typical collector-emitter
saturation voltage as a function of
junction temperature
(VGE = 15V)
Power Semiconductors
5
Rev. 2 July 06