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Soft Switching Series
IHW30N60T
q
Low Loss DuoPack : IGBT in TrenchStop® technology with optimised diode
Features:
Very low VCE(sat) 1.5 V (typ.)
Maximum Junction Temperature 175 °C
Short circuit withstand time – 5µs
TrenchStop® and Fieldstop technology for 600 V applications
offers :
G
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- low VCE(sat)
Positive temperature coefficient in VCE(sat)
Low EMI
PG-TO-247-3-21
Low Gate Charge
Qualified according to JEDEC1 for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
C
E
Applications:
Inductive Cooking
Soft Switching Applications
Type
VCE
IC
VCE(sat),Tj=25°C
Tj,max
IHW30N60T 600V
Maximum Ratings
30A
1.5V
175°C
Parameter
Collector-emitter voltage
DC collector current, limited by Tjmax
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area (VCE 600V, Tj 175°C)
Diode forward current
TC = 25°C
TC = 100°C
Diode pulsed current, tp limited by Tjmax
Gate-emitter voltage
Transient Gate-emitter voltage (tp < 5 ms)
Short circuit withstand time2)
VGE = 15V, VCC 400V, Tj 150°C
Power dissipation TC = 25°C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Marking
H30T60
Symbol
VCE
IC
ICpuls
-
IF
IFpuls
VGE
tSC
Ptot
Tj
Tstg
-
Package
PG-TO-247-3-21
Value
600
60
30
90
90
23
13
30
±20
±25
5
187
-40...+175
-55...+175
260
Unit
V
A
V
µs
W
°C
1 J-STD-020 and JESD-022
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
1
Rev. 2.1 Apr. 06

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Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction – case
Thermal resistance,
junction – ambient
Soft Switching Series
IHW30N60T
q
Symbol
RthJC
RthJCD
RthJA
Conditions
Max. Value
0.8
1.1
40
Unit
K/W
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Diode forward voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
Integrated gate resistor
V(BR)CES
VCE(sat)
VF
VGE(th)
ICES
IGES
gfs
RGint
VGE=0V, IC=0.5mA
VGE = 15V, IC=30A
Tj=25°C
Tj=175°C
VGE=0V, IF=10A
Tj=25°C
Tj=150°C
Tj=175°C
IC=0.43mA,
VCE=VGE
VCE=600V,
VGE=0V
Tj=25°C
Tj=175°C
VCE=0V,VGE=20V
VCE=20V, IC=30A
min.
600
-
-
-
-
-
4.1
-
-
-
-
Value
Typ.
-
1.5
1.9
1.1
1.0
1.0
4.9
-
-
-
16.7
-
Unit
max.
-V
2
-
1.3
-
-
5.7
µA
40
1000
100
-
nA
S
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Ciss
Coss
Crss
QGate
Internal emitter inductance
LE
measured 5mm (0.197 in.) from case
Short circuit collector current1)
IC(SC)
VCE=25V,
VGE=0V,
f=1MHz
VCC=480V, IC=30A
VGE=15V
VGE=15V,tSC5µs
VCC = 400V,
Tj = 150°C
-
-
-
-
-
-
1630
108
50
167
13
275
- pF
-
-
- nC
- nH
-A
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
2
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Soft Switching Series
IHW30N60T
q
Switching Characteristic, Inductive Load, at Tj=25 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Tj=25°C,
VCC=400V,IC=30A,
VGE=0/15V,
RG=10.6 ,
LCσσ11))==13396pnFH ,
min.
-
-
-
-
-
-
-
Value
Typ.
23
21
254
46
-
0.77
0.77
Unit
max.
- ns
-
-
-
- mJ
-
-
Switching Characteristic, Inductive Load, at Tj=175 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Tj=175°C,
VCC=400V,IC=30A,
VGE=0/15V,
RG= 10.6
Lσ1)=136nH,
Cσ1)=39pF
min.
-
-
-
-
-
-
-
Value
Typ.
24
26
292
90
-
1.1
1.1
Unit
max.
- ns
-
-
-
- mJ
-
-
1) Leakage inductance L σ a nd Stray capacity C σ due to dynamic test circuit in Figure E.
Power Semiconductors
3
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Soft Switching Series
IHW30N60T
q
90A
80A
70A
60A
50A
40A
30A
20A
10A
0A
100Hz
TC=80°C
TC=110°C
Ic
1kHz
10kHz
100kHz
Figure 1.
f, SWITCHING FREQUENCY
Collector current as a function of
switching frequency for triangular
current (Eon = 0, hard turn-off)
(Tj 175°C, D = 0.5, VCE = 400V,
VGE = 0/+15V, RG = 10)
tp=2µs
10µs
10A
50µs
1A 1ms
DC 10ms
0.1A
1V
10V
100V
1000V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 2. Safe operating area
(D = 0, TC = 25°C, Tj 175°C;
VGE=15V)
160W
120W
80W
40W
0W25°C 50°C 75°C 100°C 125°C 150°C
Figure 3.
TC, CASE TEMPERATURE
Power dissipation as a function of
case temperature
(Tj 175°C)
50A
40A
30A
20A
10A
0A
25°C
75°C
125°C
Figure 4.
TC, CASE TEMPERATURE
Collector current as a function of
case temperature
(VGE 15V, Tj 175°C)
Power Semiconductors
4
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Soft Switching Series
IHW30N60T
q
80A
70A
60A
50A
40A
30A
VGE=20V
15V
13V
11V
9V
7V
20A
10A
0A
0V 1V 2V 3V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic
(Tj = 25°C)
50A
VGE=20V
40A 15V
13V
30A 11V
9V
20A 7V
10A
0A
0V 1V 2V 3V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristic
(Tj = 175°C)
50A
40A
30A
20A
10A
TJ=175°C
25°C
0A
0V 2V 4V 6V 8V
VGE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristic
(VCE=10V)
2.5V
2.0V
1.5V
1.0V
IC=60A
IC=30A
IC=15A
0.5V
0.0V
0°C
50°C
100°C
150°C
Figure 8.
TJ, JUNCTION TEMPERATURE
Typical collector-emitter
saturation voltage as a function of
junction temperature
(VGE = 15V)
Power Semiconductors
5
Rev. 2.1 Apr. 06