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Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FZ 1200 R 33 KF2
Höchstzulässige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
Tj = 25°C
Tj = -25°C
Kollektor-Dauergleichstrom
DC-collector current
TC = 80°C
TC = 25 °C
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
tP = 1 ms, TC = 80°C
Gesamt-Verlustleistung
total power dissipation
TC=25°C, Transistor
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
Dauergleichstrom
DC forward current
Periodischer Spitzenstrom
repetitive peak forw. current
tP = 1 ms
Grenzlastintegral der Diode
I2t - value, Diode
VR = 0V, tp = 10ms, TVj = 125°C
Spitzenverlustleistung der Diode
maximum power dissipation diode
Tj = 125°C
Isolations-Prüfspannung
insulation test voltage
RMS, f = 50 Hz, t = 1 min.
Teilentladungs-Aussetzspannung
partial discharge extinction voltage
RMS, f = 50 Hz, QPD 10 pC (acc. to IEC 1287)
Datenblatt
data sheet
VCES
IC,nom.
IC
ICRM
Ptot
VGES
IF
IFRM
I2t
PRQM
VISOL
VISOL
3300
3300
1200
2000
2400
14,7
+/- 20V
1200
2400
500.000
1.200
6.000
2.600
V
A
A
A
kW
V
A
A
A2s
kW
V
V
Charakteristische Werte / Characteristic values
Transistor / Transistor
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
Gate-Schwellenspannung
gate threshold voltage
IC = 1200A, VGE = 15V, Tvj = 25°C
IC = 1200A, VGE = 15V, Tvj = 125°C
IC = 120 mA, VCE = VGE, Tvj = 25°C
Eingangskapazität
input capacitance
f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V
Rückwirkungskapazität
reverse transfer capacitance
f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V
Gateladung
gate charge
Kollektor-Emitter Reststrom
collector-emitter cut-off current
Gate-Emitter Reststrom
gate-emitter leakage current
VGE = -15V ... + 15V, VCE = 1800V
VCE = 3300V, VGE = 0V, Tvj = 25°C
VCE = 3300V, VGE = 0V, Tvj = 125°C
VCE = 0V, VGE = 20V, Tvj = 25°C
VCE sat
min.
-
-
typ.
3,40
4,30
max.
4,25
5,00
VGE(th)
4,2
5,1
6,0
V
V
V
Cies - 150 - nF
Cres
-
8
- nF
QG - 22 - µC
ICES - 0,15 12 mA
- 60 150 mA
IGES
-
- 400 nA
prepared by: Jürgen Göttert
approved by: Chr. Lübke; 20.07.99
date of publication : 08.06.99
revision: 3
1 (9)
Datenblatt FZ 1200 R 33 KF2
20.07.99

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Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FZ 1200 R 33 KF2
Charakteristische Werte / Characteristic values
Transistor / Transistor
Einschaltverzögerungszeit (ind. Last)
turn on delay time (inductive load)
Anstiegszeit (induktive Last)
rise time (inductive load)
Abschaltverzögerungszeit (ind. Last)
turn off delay time (inductive load)
Fallzeit (induktive Last)
fall time (inductive load)
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
Kurzschlußverhalten
SC Data
Modulinduktivität
stray inductance module
IC = 1200 A, VCC = 1800V
VGE = ±15V, RG = 1,2 , CGE = 220nF, Tvj = 25°C
VGE = ±15V, RG = 1,2 , CGE = 220nF, Tvj = 125°C
IC = 1200 A, VCC = 1800V
VGE = ±15V, RG = 1,2 , CGE = 220nF, Tvj = 25°C
VGE = ±15V, RG = 1,2 , CGE = 220nF, Tvj = 125°C
IC = 1200 A, VCC = 1800V
VGE = ±15V, RG = 1,2 , CGE = 220nF, Tvj = 25°C
VGE = ±15V, RG = 1,2 , CGE = 220nF, Tvj = 125°C
IC = 1200 A, VCC = 1800V
VGE = ±15V, RG = 1,2 , CGE = 220nF, Tvj = 25°C
VGE = ±15V, RG = 1,2 , CGE = 220nF, Tvj = 125°C
IC = 1200 A, VCC = 1800V, VGE = 15V
RG = 1,2 , CGE = 220 nF, Tvj = 125°C, LS = 40nH
IC = 1200 A, VCC = 1800V, VGE = 15V
RG = 1,2 , CGE = 220 nF, Tvj = 125°C, LS = 40nH
tP 10µsec, VGE 15V
TVj125°C, VCC=2500V, VCEmax=VCES -LsCE ·dI/dt
Modul-Leitungswiderstand, Anschlüsse - Chip
lead resistance, terminals - chip
T = 25°C
Datenblatt
data sheet
min. typ. max.
td,on - 370 - ns
- 350 - ns
tr - 250 - ns
- 270 - ns
td,off
- 1550 -
ns
- 1700 -
ns
tf - 200 - ns
- 200 - ns
Eon - 2880 - mWs
Eoff - 1530 - mWs
ISC
LsCE
- 6000 -
- 10 -
A
nH
RCC’+EE’
-
0,12
-
m
Charakteristische Werte / Characteristic values
Diode / Diode
Durchlaßspannung
forward voltage
Rückstromspitze
peak reverse recovery current
Sperrverzögerungsladung
recovered charge
Abschaltenergie pro Puls
reverse recovery energy
IF = 1200 A, VGE = 0V, Tvj = 25°C
IF = 1200 A, VGE = 0V, Tvj = 125°C
IF = 1200 A, - diF/dt = 3800 A/µsec
VR = 1800V, VGE = -10V, Tvj = 25°C
VR = 1800V, VGE = -10V, Tvj = 125°C
IF = 1200 A, - diF/dt = 3800 A/µsec
VR = 1800V, VGE = -10V, Tvj = 25°C
VR = 1800V, VGE = -10V, Tvj = 125°C
IF = 1200 A, - diF/dt = 3800 A/µsec
VR = 1800V, VGE = -10V, Tvj = 25°C
VR = 1800V, VGE = -10V, Tvj = 125°C
min. typ. max.
VF
-
2,80 3,50
V
-
2,80 3,50
V
IRM - 1025 - A
- 1100 -
A
Qr - 710 - µAs
- 1320 - µAs
Erec - 730 - mWs
- 1500 - mWs
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Datenblatt FZ 1200 R 33 KF2
20.07.99

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Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FZ 1200 R 33 KF2
Thermische Eigenschaften / Thermal properties
Innerer Wärmewiderstand
thermal resistance, junction to case
Übergangs-Wärmewiderstand
thermal resistance, case to heatsink
Höchstzulässige Sperrschichttemperatur
maximum junction temperature
Betriebstemperatur
operation temperature
Lagertemperatur
storage temperature
Transistor / transistor, DC
Diode/Diode, DC
pro Modul / per module
λPaste = 1 W/m*K / λgrease = 1 W/m*K
Datenblatt
data sheet
RthJC
min.
-
-
typ.
-
-
max.
0,0085
0,0170
K/W
K/W
RthCK
- 0,004 - K/W
Tvj - - 150 °C
Top -40 - 125 °C
Tstg -40 - 125 °C
Mechanische Eigenschaften / Mechanical properties
Gehäuse, siehe Anlage
case, see appendix
Material Modulgrundplatte
material of module baseplate
Innere Isolation
internal insulation
Kriechstrecke
creepage distance
Luftstrecke
clearance
CTI
comperative tracking index
Anzugsdrehmoment f. mech. Befestigung
mounting torque
Anzugsdrehmoment f. elektr. Anschlüsse
terminal connection torque
Gewicht
weight
terminals M4
terminals M8
AlSiC
AlN
32,2
mm
19,1
mm
> 400
M1 5 Nm
M2 2 Nm
8 .. 10
Nm
G
1500
g
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert.
Sie gilt in Verbindung mit den zugehörigen Technischen Erläuterungen.
This technical information specifies semiconductor devices but promises no characteristics. It is
valid in combination with the belonging technical notes.
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Datenblatt FZ 1200 R 33 KF2
20.07.99

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Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FZ 1200 R 33 KF2
Ausgangskennlinie (typisch)
Output characteristic (typical)
2400
2000
1600
T = 25°C
T = 125°C
I C = f (VCE)
VGE = 15V
Datenblatt
data sheet
1200
800
400
0
0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 5,5 6,0 6,5 7,0
VCE [V]
Ausgangskennlinienfeld (typisch)
Output characteristic (typical)
2400
IC = f (VCE)
Tvj = 125°C
2000
1600
1200
VGE = 8V
VGE = 9V
VGE = 10V
VGE = 12V
VGE = 15V
VGE = 20V
800
400
0
0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 5,5 6,0 6,5 7,0
VCE [V]
4 (9)
Datenblatt FZ 1200 R 33 KF2
20.07.99

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Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FZ 1200 R 33 KF2
Datenblatt
data sheet
Übertragungscharakteristik (typisch)
Transfer characteristic (typical)
2400
I C = f (VGE)
VCE = 20V
2000
T = 25°C
T = 125°C
1600
1200
800
400
0
5 6 7 8 9 10 11 12 13
VGE [V]
Durchlaßkennlinie der Inversdiode (typisch)
Forward characteristic of inverse diode (typical)
2400
2000
Tj = 25°C
Tj = 125°C
1600
1200
800
400
0
0,0 0,5 1,0 1,5 2,0 2,5
VF [V]
I F = f (VF)
3,0 3,5 4,0
5 (9)
Datenblatt FZ 1200 R 33 KF2
20.07.99