Silicon Carbide Schottky Diode
• Worlds first 600V Schottky diode
• Revolutionary semiconductor
material - Silicon Carbide
• Switching behavior benchmark
• No reverse recovery
• No temperature influence on
the switching behavior
• Ideal diode for Power Factor
Correction up to 800W 1)
• No forward recovery
PG-TO220-2-2.
SDP04S60, SDD04S60
SDT04S60
thinQ!¥ SiC Schottky Diode
Product Summary
VRRM
600
Qc
IF
P-TO252
13
4
P-TO220
V
nC
A
Type
SDP04S60
SDD04S60
SDT04S60
Package
P-TO220-3
P-TO252-3
PG-TO220-2-2.
Ordering Code
Q67040-S4369
Q67040-S4368
Q67040-S4445
Marking
D04S60
D04S60
D04S60
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous forward current, TC=100°C
RMS forward current, f=50Hz
IF
IFRMS
Surge non repetitive forward current, sine halfwave IFSM
TC=25°C, tp=10ms
Repetitive peak forward current
Tj=150°C, TC=100°C, D=0.1
Non repetitive peak forward current
IFRM
IFMAX
tp=10µs, TC=25°C
i 2t value, TC=25°C, tp=10ms
Repetitive peak reverse voltage
³i2dt
VRRM
Surge peak reverse voltage
Power dissipation, TC=25°C
Operating and storage temperature
VRSM
Ptot
Tj , Tstg
Pin 1
n.c.
n.c.
C
Pin 2
C
A
A
Value
4
5.6
12.5
18
40
0.78
600
600
36.5
-55... +175
Pin 3
A
C
Unit
A
A²s
V
W
°C
Rev. 2.5
Page 1
2008-06-02