D04S60.pdf 데이터시트 (총 9 페이지) - 파일 다운로드 D04S60 데이타시트 다운로드

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Final data
SDP04S60, SDD04S60
SDT04S60
Silicon Carbide Schottky Diode
• Worlds first 600V Schottky diode
• Revolutionary semiconductor
material - Silicon Carbide
• Switching behavior benchmark
• No reverse recovery
• No temperature influence on
the switching behavior
• Ideal diode for Power Factor
Correction up to 800W 1)
• No forward recovery
P-TO220-2-2.
Product Summary
VRRM
600
Qc 13
IF 4
V
nC
A
P-TO252-3-1.
P-TO220-3-1.
Type
SDP04S60
SDD04S60
SDT04S60
Package
P-TO220-3-1.
P-TO252-3-1.
P-TO220-2-2.
Ordering Code
Q67040-S4369
Q67040-S4368
Q67040-S4445
Marking
D04S60
D04S60
D04S60
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous forward current, TC=100°C
RMS forward current, f=50Hz
IF
IFRMS
Surge non repetitive forward current, sine halfwave IFSM
TC=25°C, tp=10ms
Repetitive peak forward current
Tj=150°C, TC=100°C, D=0.1
Non repetitive peak forward current
IFRM
IFMAX
tp=10µs, TC=25°C
i 2t value, TC=25°C, tp=10ms
Repetitive peak reverse voltage
∫i2dt
VRRM
Surge peak reverse voltage
Power dissipation, TC=25°C
Operating and storage temperature
VRSM
Ptot
Tj , Tstg
Pin 1
n.c.
n.c.
C
PIN 2
C
A
A
Value
4
5.6
12.5
18
40
0.78
600
600
36.5
-55... +175
PIN 3
A
C
Unit
A
A²s
V
W
°C
Page 1
2004-02-11

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Thermal Characteristics
Parameter
Final data
Symbol
Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
P-TO263-3-2: @ min. footprint
P-TO263-3-2: @ 6 cm2 cooling area 2)
P-TO252-3-1: @ min. footprint
P-TO252-3-1: @ 6 cm2 cooling area 2)
RthJC
RthJA
RthJA
SDP04S60, SDD04S60
SDT04S60
Values
Unit
min. typ. max.
- - 4.1 K/W
- - 62
- - 62
- 35 -
- - 75
- - 50
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
Static Characteristics
Diode forward voltage
IF=4A, Tj=25°C
IF=4A, Tj=150°C
Reverse current
VR=600V, Tj=25°C
VR=600V, Tj=150°C
VF V
- 1.7 1.9
- 2 2.4
IR µA
- 15 200
- 40 1000
1CCM, VIN= 85VAC, Tj = 150°C, TC =100°C, η = 93%, ∆ IIN = 30%
2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
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2004-02-11

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Final data
SDP04S60, SDD04S60
SDT04S60
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
AC Characteristics
Total capacitive charge
VR=400V, IF=4A, diF/dt=200A/µs, Tj=150°C
Switching time
VR=400V, IF=4A, diF/dt=200A/µs, Tj=150°C
Total capacitance
Qc - 13 - nC
trr - n.a. - ns
C pF
VR=0V, TC=25°C, f=1MHz
VR=300V, TC=25°C, f=1MHz
VR=600V, TC=25°C, f=1MHz
- 150 -
- 10 -
-7-
Page 3
2004-02-11