D04S60.pdf 데이터시트 (총 10 페이지) - 파일 다운로드 D04S60 데이타시트 다운로드

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Silicon Carbide Schottky Diode
• Worlds first 600V Schottky diode
• Revolutionary semiconductor
material - Silicon Carbide
• Switching behavior benchmark
• No reverse recovery
• No temperature influence on
the switching behavior
• Ideal diode for Power Factor
Correction up to 800W 1)
• No forward recovery
PG-TO220-2-2.
SDP04S60, SDD04S60
SDT04S60
thinQ!¥ SiC Schottky Diode
Product Summary
VRRM
600
Qc
IF
P-TO252
13
4
P-TO220
V
nC
A
Type
SDP04S60
SDD04S60
SDT04S60
Package
P-TO220-3
P-TO252-3
PG-TO220-2-2.
Ordering Code
Q67040-S4369
Q67040-S4368
Q67040-S4445
Marking
D04S60
D04S60
D04S60
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous forward current, TC=100°C
RMS forward current, f=50Hz
IF
IFRMS
Surge non repetitive forward current, sine halfwave IFSM
TC=25°C, tp=10ms
Repetitive peak forward current
Tj=150°C, TC=100°C, D=0.1
Non repetitive peak forward current
IFRM
IFMAX
tp=10µs, TC=25°C
i 2t value, TC=25°C, tp=10ms
Repetitive peak reverse voltage
³i2dt
VRRM
Surge peak reverse voltage
Power dissipation, TC=25°C
Operating and storage temperature
VRSM
Ptot
Tj , Tstg
Pin 1
n.c.
n.c.
C
Pin 2
C
A
A
Value
4
5.6
12.5
18
40
0.78
600
600
36.5
-55... +175
Pin 3
A
C
Unit
A
A²s
V
W
°C
Rev. 2.5
Page 1
2008-06-02

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Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
PG-TO252-3-1: @ min. footprint
PG-TO252-3-1: @ 6 cm2 cooling area 2)
SDP04S60, SDD04S60
SDT04S60
Symbol
Values
Unit
min. typ. max.
RthJC
RthJA
RthJA
- - 4.1 K/W
- - 62
- - 75
- - 50
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
Static Characteristics
Diode forward voltage
IF=4A, Tj=25°C
IF=4A, Tj=150°C
VF
- 1.7 1.9
- 2 2.4
Reverse current
VR=600V, Tj=25°C
VR=600V, Tj=150°C
IR
- 15 200
- 40 1000
Unit
V
µA
1CCM, VIN= 85VAC, Tj = 150°C, TC =100°C, η = 93%, ∆ IIN = 30%
2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Rev. 2.5
Page 2
2008-06-02

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SDP04S60, SDD04S60
SDT04S60
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
AC Characteristics
Total capacitive charge
VR=400V, IF=4A, diF/dt=200A/µs, Tj=150°C
Switching time
VR=400V, IF=4A, diF/dt=200A/µs, Tj=150°C
Total capacitance
Qc - 13 -
trr - n.a. -
C
VR=0V, TC=25°C, f=1MHz
VR=300V, TC=25°C, f=1MHz
VR=600V, TC=25°C, f=1MHz
- 150 -
- 10 -
-7-
Unit
nC
ns
pF
Rev. 2.5
Page 3
2008-06-02

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1 Power dissipation
Ptot = f (TC)
40
W
SDP04S60, SDD04S60
SDT04S60
2 Diode forward current
IF= f (TC)
parameter: Tj≤175 °C
4.5
A
3.5
30
3
25
2.5
20
2
15
1.5
10
1
5 0.5
00 20 40 60 80 100 120 140 °C 180
TC
3 Typ. forward characteristic
IF = f (VF)
parameter: Tj , tp = 350 µs
8
A
-40°C
25°C
6 100°C
125°C
150°C
5
4
3
2
1
00 20 40 60 80 100 120 140 °C 180
TC
4 Typ. forward power dissipation vs.
average forward current
PF(AV)=f(IF) TC=100°C, d = tp/T
18
W
14
12
10
8
6
d=0.1
4 d=0.2
d=0.5
2 d=1
00 0.5 1 1.5 2 2.5 V 3.5
VF
Rev. 2.5
Page 4
00 1 2 3 4 5 A 7
IF(AV)
2008-06-02

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5 Typ. reverse current vs. reverse voltage
IR=f(VR)
10 2
µA
SDP04S60, SDD04S60
SDT04S60
6 Transient thermal impedance
ZthJC = f (tp)
parameter : D = tp/T
10 1 SDP04S60
K/W
10 1
10 0
10 0
10 -1
10 -2
25°C
100°C
125°C
150°C
10 -1
10 -2
10 -3
single pulse
D = 0.50
0.20
0.10
0.05
0.02
0.01
10 -3
100 200 300 400 V
600
VR
7 Typ. capacitance vs. reverse voltage
C= f(VR)
parameter: TC = 25 °C, f = 1 MHz
125
10
-4
10
-7
10 -6
10 -5
10 -4
10 -3
10 -2
8 Typ. C stored energy
EC=f(VR)
s 10 0
tp
2
µJ
pF
1.6
1.4
75 1.2
1
50 0.8
0.6
25 0.4
0.2
010 0 10 1 10 2 V 10 3
VR
00 100 200 300 400 V 600
VR
Rev. 2.5
Page 5
2008-06-02