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Prod uct Bul le tin OP770A
Feb ru ary 2000
NPN Phototransistor with Collector-Emitter Capacitor
Types OP770A, OP770B, OP770C, OP770D
Features
Supresses high frequency noise
Variety of sensitivity ranges
Wide receiving angle
Side looking package for space limited
applications
Description
The OP770 consists of an NPN
phototransistor and 1000 pF capacitor
molded in a clear epoxy package. The
internal collector-emitter capacitor allows
the device to be used in applications
where external high frequency emissions
could compromise signal integrity.
Ab so lute Maxi mum Rat ings (TA = 25o C un less oth er wise noted)
Collector-EmitterVoltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V
Emitter-CollectorVoltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0 V
Stor age and Op er at ing Tem pera ture Range . . . . . . . . . . . . . . . . . . -40° C to +100° C
Lead Soldering Tem pera ture [1/16 inch (1.6 mm) from case for 5 sec . with sol der ing
iron] . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260° C(1)
PowerDissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW(2)
Notes:
(1) RMA flux is rec om mended. Du ra tion can be ex tended to 10 sec . max. when flow sol der ing.
Max. 20 grams force may be applied to leads when soldering.
(2) Derate linearly 1.33 mW/° C above 25° C.
(3) Light source is an unfiltered GaAs LED with a peak emission wavelength of 935 nm and a
radiometric intensity level which varies less than 10% over the entire lense surface of the
phototransistor being tested.
(4) To calculate typical collector dark current in µA, use the formula ICED = 10 (0.040TA-3.4) when
TA is ambient temperature in °C.
Typi cal Per form ance Curves
The device’s wide receiving angle
provides relatively even reception over a
large area.
Typical Spectral Response
Schematic
The OP770 is 100% production tested
using an infrared light source for close
correlation with Optek’s GaAs and
GaAIAs emitters.
Side-looking package is designed for
easy PC board mounting of slotted
optical switches or optical interrupt
detectors.
Wavelength - nm
Op tek Tech nol ogy, Inc. 1215 W. Crosby Road Car roll ton, Texas 75006 (972) 323- 2200 Fax (972) 323- 2396

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Types OP770A,www.DataSheet4U.com OP770B, OP770C, OP770D
ElectricalCharacteristics(TA = 25o C un less oth er wise noted)
SYMBOL
PARAMETER
IC(ON)
On-State Collector Current
OP770D
OP770C
OP770B
OP770A
IC/T Relative IC Changes with Temperature
ICEO
V(BR)ECO
VCE(SAT)
CCE
Collector Dark Current
Emitter-Collector Breakdown Voltage
Collector-Emitter Saturation Voltage
Capacitance
MIN TYP MAX UNITS
TEST CON DI TIONS
0.85
0.85
1.50
7.00
2.80
4.20
VCE = 5.0 V, Ee = 1.0 mW/cm2(3)
mA
2.25 7.00
100
%/ ° C
VCE = 5.0 V, Ee = 1.0 mW/cm2, λ
= 935 nm
100
5.0
0.40
1000
nA VCE = 10.0 V, Ee = 0
V IE = 100 µA
V IC = 100 µA, Ee = 1.0 mW/cm2(3)
pF VR = 0
Typi cal Per form ance Curves
1.00
.75
.50
.25
0.0
1
Normalized Output
vs. Frequency
OP770
VR L = 1 V
VCE = 5 V
50% Duty Cycle
OP550
RL = 10 K
10 100
Frequency - KHz
1000
Typical Rise and Fall Time
vs. Load Resistance
160 LED = GaAIAs, λ = 890
140 n m
120
100
VCC = 5 V
VRL = 1 V
80 f = 100 Hz
60 PW = 1 mS
OP770
OP550
40
20
0
0 2 4 6 8 10
RL - Load Resistance - K
Op tek re serves the right to make changes at any time in or der to im prove de sign and to sup ply the best prod uct pos si ble
Op tek Tech nol ogy, Inc. 1215 W. Crosby Road Car roll ton, Texas 75006 (972)323- 2200
Fax (972)323- 2396