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PROCESS CPS053
Silicon Controlled Rectifier
2.0 Amp Sensitive Gate SCR Chip
PROCESS DETAILS
Process
Die Size
Die Thickness
Cathode Bonding Pad Area
Gate Bonding Pad Area
Top Side Metalization
Back Side Metalization
www.DataSheet4U.com
GEOMETRY
Glass Passivated Mesa
53 x 53 MILS
8.7 MILS
20 x 10 MILS
7.9 x 7.9 MILS
Al - 45,000Å
Al/Mo/Ni/Ag - 32,000Å
GROSS DIER PER 4 INCH WAFER
3,884
PRINCIPAL DEVICE TYPES
CS92-2M Series
CS223-2M Series
MCR22-6 Series
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
R0 (4- January 2006)