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Transistors
2SD1302
Silicon NPN epitaxial planar type
For low-voltage output amplification
For muting
For DC-DC converter
5.0±0.2
Unit: mm
4.0±0.2
Features
Low collector-emitter saturation voltage VCE(sat)
Low ON resistance Ron
High forward current transfer ratio hFE
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
www.DCaotlaleSchtoere-et4mUit.tceor mvoltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
25
20
12
0.5
1
600
150
55 to +150
Unit
V
V
V
A
A
mW
°C
°C
0.7±0.1
0.45+–00..115
2.5+–00..26
2.5+–00..26
0.45+–00..115
1 23
1: Emitter
2: Collector
3: Base
TO-92-B1 Package
Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio *1
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
ON resistanse *3
VCBO
VCEO
VEBO
ICBO
hFE1 *2
hFE2
VCE(sat)
VBE(sat)
fT
Cob
Ron
IC = 10 µA, IE = 0
IC = 1 mA, IB = 0
IE = 10 µA, IC = 0
VCB = 25 V, IE = 0
VCE = 2 V, IC = 0.5 A
VCE = 2 V, IC = 1 A
IC = 0.5 A, IB = 20 mA
IC = 0.5 A, IB = 50 mA
VCB = 10 V, IE = −50 mA, f = 200 MHz
VCB = 10 V, IE = 0, f = 1 MHz
25
20
12
200
60
100
800
0.13 0.40
1.2
200
10
1.0
V
V
V
nA
V
V
MHz
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
R
hFE1 200 to 350
S
300 to 500
T
400 to 800
*3: Ron Measurement circuit
1 k
IB = 1 mA
f = 1 kHz
V = 0.3 V
VB VV VA
Publication date: January 2003
SJC00215BED
Ron =
VB
VA VB
× 1 000 ()
1

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2SD1302
PC Ta
800
700
600
500
400
300
200
100
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
IC VCE
1.2
Ta = 25°C
IB = 4.0 mA
1.0 3.5 mA
3.0 mA
0.8 2.5 mA
2.0 mA
0.6
1.5 mA
0.4 1.0 mA
0.5 mA
0.2
0
0123456
Collector-emitter voltage VCE (V)
VCE(sat) IC
100 IC / IB = 25
10
1
Ta = 75°C
25°C
0.1 25°C
0.01
0.01
0.1 1
Collector current IC (A)
10
VBE(sat) IC
100
www.DataSheet4U.com
IC / IB = 10
10
1 Ta = −25°C
25°C
75°C
0.1
0.01
0.01
0.1 1
Collector current IC (A)
10
1 200
1 000
hFE IC
VCE = 2 V
800
Ta = 75°C
600 25°C
25°C
400
200
0
0.01 0.1
1
Collector current IC (A)
10
fT IE
400
VCB = 10 V
Ta = 25°C
350
300
250
200
150
100
50
0
1 10 100
Emitter current IE (mA)
Cob VCB
24
IE = 0
Ta = 25°C
f = 1 MHz
20
16
12
8
4
0
1 10 100
Collector-base voltage VCB (V)
1 000
100
10
Ron IB
Ron measurement circuit
IB = 1 mA
VB V VA
f = 1 kHz
V = 0.3 V
1
0.1
0.01
0.1 1
Base current IB (mA)
10
2 SJC00215BED

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2002 JUL