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Power Transistors
2SB967
Silicon PNP epitaxial planar type
For low-frequency power amplification
6.5±0.1
5.3±0.1
4.35±0.1
Unit: mm
2.3±0.1
0.5±0.1
s Features
q Possible to solder the radiation fin directly to printed cicuit board
q Low collector to emitter saturation voltage VCE(sat)
q Large collector current IC
0.93±0.1
1.0±0.1
0.1±0.05
0.5±0.1
2.3±0.1
4.6±0.1
0.75±0.1
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
www.DCaotlaleSchtoeretto4Uba.sceovmoltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation (TC=25°C)
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
–27
–18
–7
–8
–5
20
150
–55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
s Electrical Characteristics (TC=25˚C)
123
6.5±0.2
5.35
4.35
1:Base
2:Collector
3:Emitter
U Type Package
Unit: mm
2.3 2.3
0.75
0.6
123
0.5±0.1
1:Base
2:Collector
3:Emitter
EIAJ:SC–63
U Type Package (Z)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
ICBO
IEBO
VCEO
VEBO
hFE*
VCE(sat)
fT
Cob
VCB = –10V, IE = 0
VEB = –5V, IC = 0
IC = –1mA, IB = 0
IE = –10µA, IC = 0
VCE = –2V, IC = –2A
IC = –3A, IB = – 0.1A
VCB = –6V, IE = 50mA, f = 200MHz
VCB = –20V, IE = 0, f = 1MHz
–18
–7
90
–100 nA
–1 µA
V
V
625
–1 V
120 MHz
85 pF
*hFE Rank classification
Rank
P
hFE 90 to 135
Q
125 to 205
R
180 to 625
1

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Power Transistors
PC — Ta
32
TC=Ta
28
24
20
16
12
8
4
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
IC — VCE
–6
TC=25˚C
IB=–40mA –35mA
–5 –30mA
–25mA
–4 –20mA
–15mA
–3
–10mA
–2
–5mA
–1
–1mA
0
0 –2 –4 –6 –8 –10 –12
Collector to emitter voltage VCE (V)
VCE(sat) — IC
–100
www.DataSheet4U.com
–30
IC/IB=30
–10
–3
–1
– 0.3
– 0.1
TC=100˚C
–25˚C
– 0.03
25˚C
– 0.01
– 0.01 – 0.03 – 0.1 – 0.3 –1 –3
Collector current IC (A)
–10
Cob — VCB
200
IE=0
f=1MHz
TC=25˚C
160
100000
30000
10000
hFE — IC
VCE=–2V
3000
1000
300
100
TC=100˚C 25˚C
–25˚C
30
10
– 0.01 – 0.03 – 0.1 – 0.3 –1 –3
Collector current IC (A)
–10
120
80
40
0
–1 –3 –10 –30 –100
Collector to base voltage VCB (V)
2SB967
IC — VBE
–12
VCE=–2V
–10
25˚C
–8
TC=100˚C
–25˚C
–6
–4
–2
0
0 – 0.4 – 0.8 –1.2 –1.6 –2.0
Base to emitter voltage VBE (V)
fT — IE
240
VCB=–6V
f=200MHz
200 TC=25˚C
160
120
80
40
0
1
3
10 30
100
Emitter current IE (mA)
2