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Ordering number:930C
PNP/NPN Epitaxial Planar Silicon Darlington Transistors
2SB892/2SD1207
Large-Current Switching Applications
Features
· Power supplies, relay drivers, lamp drivers, and
automotive wiring.
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· FBET and MBIT processed (Original process of
SANYO).
· Low saturation voltage.
· Large current capacity and wide ASO.
Package Dimensions
unit:mm
2006A
[2SB892/2SD1207]
( ) : 2SB892
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Allowable Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Symbol
Conditions
ICBO
IEBO
hFE1
hFE2
fT
Cob
VCB=(–)50V, IE=0
VEB=(–)4V, IC=0
VCE=(–)2V, IC=(–)100mA
VCE=(–)2V, IC=(–)1.5A
VCE=(–)10V, IC=(–)50mA
VCB=(–)10V, f=1MHz
* : The 2SB892/2SD1207 are graded as follows by hFE at 100mA :
100 R 200 140 S 280 200 T 400 280 U 560
EIAJ : SC-51
SANYO : MP
B : Base
C : Collector
E : Emitter
Ratings
(–)60
(–)50
(–)6
(–)2
(–)4
1
150
–55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
Ratings
min typ
100
40
150
12
(22)
max
(–)0.1
(–)0.1
560
Unit
µA
µA
MHz
pF
pF
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
91098HA (KT)/4067KI/3145KI No.930–1/4

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Parameter
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
2SB892/2SD1207
Symbol
Conditions
VCE(sat) IC=(–)1A, IB=(–)50mA
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
IC=(–)1A, IB=(–)50mA
IC=(–)10µA, IE=0
IC=(–)1mA, RBE=
IE=(–)10µA, IC=0
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Ratings
min typ
0.15
(–0.3)
(–)0.9
(–)60
(–)50
(–)6
max
0.4
(–0.7)
(–)1.2
Unit
V
V
V
V
V
V
No.930–2/4

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2SB892/2SD1207
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No.930–3/4