F1010ES.pdf , 데이터시트 , 데이타시트

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l Advanced Process Technology

l Surface Mount (IRF1010ES)

l Low-profile through-hole (IRF1010EL)

l 175°C Operating Temperature

www.DataSheet4U.com l Fast Switching

l Fully Avalanche Rated

Description

Advanced HEXFET® Power MOSFETs from International

Rectifier utilize advanced processing techniques to

achieve extremely low on-resistance per silicon area.

This benefit, combined with the fast switching speed and

ruggedized device design that HEXFET power MOSFETs

are well known for, provides the designer with an

extremely efficient and reliable device for use in a wide

variety of applications.

The D2Pak is a surface mount power package capable of

accommodating die sizes up to HEX-4. It provides the

highest power capability and the lowest possible on-

resistance in any existing surface mount package. The

D2Pak is suitable for high current applications because of its

low internal connection resistance and can dissipate up to

2.0W in a typical surface mount application.

The through-hole version (IRF1010EL) is available for low-

profile applications.

Absolute Maximum Ratings

ID @ TC = 25°C

ID @ TC = 100°C

IDM

PD @TC = 25°C

VGS

IAR

EAR

dv/dt

TSTG

Parameter

Continuous Drain Current, VGS @ 10V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 srew

Thermal Resistance

RθJC

RθJA

Parameter

Junction-to-Case

Junction-to-Ambient (PCB mount)**

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PD - 91720

IRF1010ES

IRF1010EL

HEXFET® Power MOSFET

VDSS = 60V

RDS(on) = 12mΩ

ID = 84A

D2Pak

IRF1010ES

TO-262

IRF1010EL

Max.

330

200

1.4

± 20

4.0

-55 to + 175

300 (1.6mm from case )

10 lbf•in (1.1N•m)

Units

W/°C

V/ns

°C

Typ.

–––

Max.

0.75

Units

°C/W

02/14/02

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IRF1010ES/IRF1010EL

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

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V(BR)DSS

∆V(BR)DSS/∆TJ

RDS(on)

VGS(th)

gfs

IDSS

Parameter

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

Forward Transconductance

Drain-to-Source Leakage Current

IGSS

Qgs

Qgd

td(on)

td(off)

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

LD Internal Drain Inductance

Ciss

Coss

Crss

EAS

Internal Source Inductance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Single Pulse Avalanche Energy

Min. Typ. Max. Units

60 ––– ––– V

––– 0.064 ––– V/°C

––– ––– 12 mΩ

2.0 ––– 4.0 V

69 ––– ––– S

––– ––– 25 µA

––– ––– 250

––– ––– 100

––– ––– -100

––– ––– 130

––– ––– 28 nC

––– ––– 44

––– 12 –––

––– 78 –––

––– 48 –––

––– 53 –––

––– 4.5 –––

––– 7.5 –––

––– 3210 –––

––– 690 –––

––– 140 –––

––– 1180320

Conditions

VGS = 0V, ID = 250µA

Reference to 25°C, ID = 1mA

VGS = 10V, ID = 50A

VDS = VGS, ID = 250µA

VDS = 25V, ID = 50A

VDS = 60V, VGS = 0V

VDS = 48V, VGS = 0V, TJ = 150°C

VGS = 20V

VGS = -20V

ID = 50A

VDS = 48V

VGS = 10V, See Fig. 6 and 13

VDD = 30V

ID = 50A

RG = 3.6Ω

VGS = 10V, See Fig. 10

Between lead,

6mm (0.25in.)

from package

and center of die contact

VGS = 0V

VDS = 25V

ƒ = 1.0MHz, See Fig. 5

IAS = 50A, L = 260µH

Source-Drain Ratings and Characteristics

Parameter

IS Continuous Source Current

(Body Diode)

ISM Pulsed Source Current

(Body Diode)

VSD Diode Forward Voltage

trr Reverse Recovery Time

Qrr Reverse Recovery Charge

ton Forward Turn-On Time

Min. Typ. Max. Units

Conditions

MOSFET symbol

––– ––– 84 A showing the

integral reverse

––– ––– 330

p-n junction diode.

––– ––– 1.3 V TJ = 25°C, IS = 50A, VGS = 0V

––– 73 110 ns TJ = 25°C, IF = 50A

––– 220 330 nC di/dt = 100A/µs

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:

Repetitive rating; pulse width limited by

max. junction temperature. (See fig. 11)

Starting TJ = 25°C, L = 260µH

RG = 25Ω, IAS = 50A, VGS =10V

(See Figure 12)

ISD ≤ 50A, di/dt ≤ 230A/µs, VDD ≤ V(BR)DSS,

TJ ≤ 175°C

Pulse width ≤ 400µs; duty cycle ≤ 2%.

This is a typical value at device destruction and represents

operation outside rated limits.

This is a calculated value limited to TJ = 175°C .

Calculated continuous current based on maximum allowable

junction temperature. Package limitation current is 75A.

**When mounted on 1" square PCB (FR-4 or G-10 Material). For

recommended footprint and soldering techniques refer to application

note #AN-994

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IRF1010ES/IRF1010EL

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1000

TOP

VGS

15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM 4.5V

100

4.5V

20µs PULSE WIDTH

TJ = 25 °C

0.1 1 10 100

VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

1000

TOP

VGS

15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM 4.5V

100

4.5V

0.1

20µs PULSE WIDTH

TJ = 175 °C

1 10

VDS, Drain-to-Source Voltage (V)

100

Fig 2. Typical Output Characteristics

1000

100

TJ = 25°C

TJ = 175°C

V DS= 25V

20µs PULSE WIDTH

4 5 6 7 8 9 10 11

VGS , Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

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3.0 ID = 84A

2.5

2.0

1.5

1.0

0.5

VGS = 10V

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

TJ, Junction Temperature ( °C)

Fig 4. Normalized On-Resistance

Vs. Temperature

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IRF1010ES/IRF1010EL

6000

5000

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4000

3000

2000

Ciss

VGS = 0V, f = 1 MHZ

Ciss = Cgs + Cgd, Cds SHORTED

Crss = Cgd

Coss = Cds + Cgd

Coss

1000

Crss

VDS, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

100

20 ID = 50A

VDS = 48V

VDS = 30V

VDS = 12V

FOR TEST CIRCUIT

SEE FIGURE 13

0 20 40 60 80 100 120 140

QG, Total Gate Charge (nC)

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

1000

100

TJ = 175° C

TJ = 25° C

0.1

0.0

VGS = 0 V

0.6 1.2 1.8

VSD ,Source-to-Drain Voltage (V)

2.4

Fig 7. Typical Source-Drain Diode

Forward Voltage

1000

OPERATION IN THIS AREA

LIMITED BY R DS(on)

100

100µsec

10 1msec

Tc = 25°C

Tj = 175°C

Single Pulse

1 10

10msec

100

VDS , Drain-toSource Voltage (V)

1000

Fig 8. Maximum Safe Operating Area

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IRF1010ES/IRF1010EL

100

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LIMITED BY PACKAGE

25 50 75 100 125 150 175

TC , Case Temperature ( °C)

Fig 9. Maximum Drain Current Vs.

Case Temperature

VDS

VGS

D.U.T.

VGS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

+-VDD

Fig 10a. Switching Time Test Circuit

VDS

90%

10%

VGS

td(on) tr

td(off) tf

Fig 10b. Switching Time Waveforms

D = 0.50

0.20

0.1 0.10

0.05

0.02

0.01

0.00001

SINGLE PULSE

(THERMAL RESPONSE)

PDM

Notes:

1. Duty factor D = t1 / t 2

2. Peak T J = P DM x Z thJC + TC

0.0001

0.001

t1, Rectangular Pulse Duration (sec)

0.01

0.1

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case