IRF1010ES/IRF1010EL
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
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V(BR)DSS
∆V(BR)DSS/∆TJ
RDS(on)
VGS(th)
gfs
IDSS
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD Internal Drain Inductance
LS
Ciss
Coss
Crss
EAS
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Single Pulse Avalanche Energy
Min. Typ. Max. Units
60 ––– ––– V
––– 0.064 ––– V/°C
––– ––– 12 mΩ
2.0 ––– 4.0 V
69 ––– ––– S
––– ––– 25 µA
––– ––– 250
––– ––– 100
nA
––– ––– -100
––– ––– 130
––– ––– 28 nC
––– ––– 44
––– 12 –––
––– 78 –––
ns
––– 48 –––
––– 53 –––
––– 4.5 –––
––– 7.5 –––
nH
––– 3210 –––
––– 690 –––
––– 140 –––
––– 1180
320
pF
mJ
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 50A
VDS = VGS, ID = 250µA
VDS = 25V, ID = 50A
VDS = 60V, VGS = 0V
VDS = 48V, VGS = 0V, TJ = 150°C
VGS = 20V
VGS = -20V
ID = 50A
VDS = 48V
VGS = 10V, See Fig. 6 and 13
VDD = 30V
ID = 50A
RG = 3.6Ω
VGS = 10V, See Fig. 10
Between lead,
6mm (0.25in.)
from package
G
and center of die contact
VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig. 5
IAS = 50A, L = 260µH
D
S
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
––– ––– 84 A showing the
integral reverse
––– ––– 330
p-n junction diode.
G
D
S
––– ––– 1.3 V TJ = 25°C, IS = 50A, VGS = 0V
––– 73 110 ns TJ = 25°C, IF = 50A
––– 220 330 nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
Starting TJ = 25°C, L = 260µH
RG = 25Ω, IAS = 50A, VGS =10V
(See Figure 12)
ISD ≤ 50A, di/dt ≤ 230A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
This is a typical value at device destruction and represents
operation outside rated limits.
This is a calculated value limited to TJ = 175°C .
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
**When mounted on 1" square PCB (FR-4 or G-10 Material). For
recommended footprint and soldering techniques refer to application
note #AN-994
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