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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
8050S TRANSISTOR NPN
FEATURES
Power dissipation
PCM : 0.625 W Tamb=25
www.DataSheetC4Uo.lcloemctor current
ICM : 0.5 A
Collector-base voltage
V(BR)CBO : 40 V
Operating and storage junction temperature range
TJ Tstg: -55 to +150
TO 92
1.EMITTER
2. COLLECTOR
3.BASE
123
ELECTRICAL CHARACTERISTICS Tamb=25
Parameter
Symbol
unless otherwise specified
Test conditions
MIN TYP MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO Ic= 100 , IE=0
40
V
Collector-emitter breakdown voltage V(BR)CEO Ic= 1 mA IB=0
25
V
Emitter-base breakdown voltage
V(BR)EBO
IE= 100 A IC=0
5
V
Collector cut-off current
ICBO VCB= 40 V , IE=0
0.1 A
Collector cut-off current
ICEO VCE= 20 V , IB=0
0.1 A
Emitter cut-off current
DC current gain
IEBO
hFE 1
hFE 2
VEB= 3 V IC=0
VCE= 1 V, IC= 50m A
VCE= 1 V, IC= 500m A
85
50
0.1 A
300
Collector-emitter saturation voltage
VCE(sat)
IC=500mA, IB=50 mA
0.6 V
Base-emitter saturation voltage
Transition frequency
CLASSIFICATION OF hFE(1)
Rank
VBE(sat)
fT
IC=500mA, IB=50 mA
VCE= 6 V, IC=20mA
f =30MHz
150
BC
1.2 V
MHz
D
Range
85-160
120-200
160-300