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Ordering number:ENN6410
P-Channel Silicon MOSFET
2SJ584LS
Ultrahigh-Speed Switching Applications
Features
· Low ON-resistance.
· Ultrahigh-speed switching.
· Micaless package facilitating mounting.
www.DataSheet4U.com
Package Dimensions
unit:mm
2078B
[2SJ584LS]
10.0
3.2
4.5
2.8
0.9
1.2
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Symbol
VDSS
VGSS
ID
IDP
Allowable Power Dissipation
PD
Channel Temperature
Storage Temperature
Tch
Tstg
Conditions
PW10µs, duty cycle1%
Tc=25°C
Electrical Characteristics at Ta = 25˚C
Parameter
Drain-to-Source Breakdown Voltage
Gate-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Symbol
Conditions
V(BR)DSS
V(BR)GSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)
ID=–1mA, VGS=0
IG=±100µA, VDS=0
VDS=–250V, VGS=0
VGS=±25V, VDS=0
VDS=–10V, ID=–1mA
VDS=–10V, ID=–2.5A
ID=–2.5A, VGS=–10V
0.75
1 23
2.55 2.55
0.7
1 : Gate
2 : Drain
3 : Source
SANYO : TO-220FI-LS
Ratings
–250
±30
–4.5
–18
2.0
25
150
–55 to +150
Unit
V
V
A
A
W
W
˚C
˚C
Ratings
min typ max
Unit
–250
V
±30 V
–100 µA
±10 µA
–3.5 –5.0 V
1.5 2.5
S
0.95 1.2
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
80300TS (KOTO) TA-2755 No.6410–1/4

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2SJ584LS
Continued from preceding page.
Parameter
Symbol
Conditions
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain "Miller" Charge
Diode Forward Voltage
www.DataSheet4U.com
Marking : J584
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
VDS=–20V, f=1MHz
VDS=–20V, f=1MHz
VDS=–20V, f=1MHz
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
VDS=–100V, VGS=–10V, ID=–4.5A
VDS=–100V, VGS=–10V, ID=–4.5A
VDS=–100V, VGS=–10V, ID=–4.5A
IS=–4.5A, VGS=0
Switching Time Test Circuit
VDD= --100V
VIN
0V
--10V
PW=10µs
D.C.1%
VIN
G
ID= --2.5A
RL=40
D VOUT
P.G 50
2SJ584LS
S
Ratings
min typ max
Unit
450 pF
120 pF
50 pF
12.5
ns
30 ns
52 ns
21 ns
22 nC
3.7 nC
11 nC
–0.9 –1.5 V
ID -- VDS
--5.0
--4.5 --7V
--4.0
--3.5
--3.0
--2.5
--2.0 --6V
--1.5
--1.0
--0.5
--5V
0
0 --1 --2 --3 --4 --5 --6 --7 --8 --9 --10
Drain-to-Source Voltage, VDS – V IT01497
RDS(on) -- VGS
2.0
Tc=25°C
1.8 ID= --2.5A
1.6
1.4
1.2
1.0
0.8
0.6
--6
--8
--10 --12 --14 --16 --18
--20
Gate-to-Source Voltage, VGS – V IT01499
--9
VDS= --10V
--8
--7
--6
ID -- VGS
25°C
75°C
--5
--4
--3
--2
--1
0
0 --1 --2 --3 --4 --5 --6 --7 --8 --9 --10
Gate-to-Source Voltage, VGS – V IT01498
RDS(on) -- Tc
2.5
VGS= --10V
ID= --2.5A
2.0
1.5
1.0
0.5
0
--50 --25
0 25 50 75 100 125 150
Case Temperature, Tc – ˚C
IT01500
No.6410–2/4

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2SJ584LS
yfs-- ID
10
--10
7
VDS= --10V
7
5
53
2
3
2
Tc= --25°C
75°C
1.0 25°C
7
--1.0
7
5
3
2
5
--0.1
7
35
23
2
IF -- VSD
VGS = 0
0.1
www.DataSheet4U.co--m0.1
1000
7
5
3
2
23
5 7 --1.0
23
Drain Current, ID – A
SW Time -- ID
5 7 --10
IT01501
VDD= --100V
VGS= --10V
--0.01
0
10000
7
5
3
2
--0.3 --0.6 --0.9
Diode Forward Voltage, VSD – V
--1.2
IT01502
Ciss, Coss, Crss -- VDS
f=1MHz
100
7
td(off)
tr 1000
7
5 tf
3
5
3
2
td(on)
2
10 100
77
55
33
22
Ciss
Coss
Crss
1.0
--0.1
23
--10
VDS= --100V
--9 ID= --4.5A
5 7 --1.0
23
Drain Current, ID – A
VGS -- Qg
--8
5 7 --10
IT01503
--7
--6
--5
--4
--3
--2
--1
0
0 2 4 6 8 10 12 14 16 18 20 22
Total Gate Charge, Qg – nC
IT01505
PD -- Ta
2.5
10
0
--5 --10 --15 --20 --25 --30
Drain-to-Source Voltage, VDS – V IT01504
--100
7
5
ASO
3
2
IDP= --18A
--10
7
5
ID= --4.5A
3
2
--1.0
7
5
DC op1e0r10at0mimo1snms s100µs10µs
3 Operation in this
2 area is limited by RDS(on).
--0.1
7
5
3
2
Tc=25°C
Single pulse
--0.01
--1.0 2 3 5 7 --10 2 3 5 7 --100 2 3
Drain-to-Source Voltage, VDS – V
5 7 --1000
IT01506
PD -- Tc
40
35
2.0
30
1.5 25
20
1.0 15
0.5
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta – ˚C
IT01508
10
5
0
0 20 40 60 80 100 120 140 160
Case Temperature, Tc – ˚C
IT01507
No.6410–3/4