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DIODE MODULE
DD(KD)100GB40/80
Power Diode Module DD100GB series are designed for various rectifier circuits.
DD100GB has two diode chips connected in series and the mounting base is elctrically
isolated from elements for simple heatsink construction. Wide voltage rating up to, 800V
is avaiable for various input voltage.
Isolated mounting base
Two elements in a package for simple (single and three phase) bridge
connections
Highly reliable glass passivated chips
High surge current capability
Applications
Various rectifiers, Battery chargers, DC motor drives
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UL;E76102 M
Unit a
Maximum Ratings
Symbol
Item
VRRM
VRSM
Repetitive Peak Reverse Voltage
Non-Repetitive Peak Reverse Voltage
DD100GB40
400
480
Ratings
DD100GB80
800
960
Tj 25
Unit
V
V
Symbol
IF AV
IF (RMS)
IFSM
I2t
Tj
Tstg
VISO
Item
Average Forward Current
R.M.S. Forward Current
Surge Forward Current
I2t
Junction Temperature
Storage Temperature
Isolation Breakdown Voltage R.M.S.
Mounting
Torque
Mass
Mounting M6
Terminal M5
Conditions
Single phase, half wave, 180 conduction, Tc 115
Single phase, half wave, 180 conduction, Tc 115
1 2 cycle, 50/60HZ, peak value, non-repetitive
Value for one cycle of surge current
A.C.1minute
Recommended Value 2.5 3.9 25 40
Recommended Value 1.5 2.5 15 25
Ratings
100
155
1800/2000
16500
40 150
40 125
2500
4.7 48)
2.7 28)
170
Unit
A
A
A
A2S
V
Nm
fB
g
Electrical Characteristics
Symbol
Item
IRRM Repetitive Peak Reverse Current, max.
VFM Forward Voltage Drop, max.
Rth j-c Thermal Impedance, max.
Conditions
at VDRM, single phase, half wave. Tj 150
Foward current 320A Tj 25 Inst. measurement
Junction to case
Ratings
30
1.25
0.30
Unit
mA
V
/W
75

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DD(KD)100GB40/80
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