14N03L.pdf 데이터시트 (총 8 페이지) - 파일 다운로드 14N03L 데이타시트 다운로드

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OptiMOS® Buck converter series
Feature
N-Channel
Logic Level
Low On-Resistance RDS(on)
www.DataSheet4UE.cxocmellent Gate Charge x RDS(on) product (FOM)
Superior thermal resistance
175°C operating temperature
Avalanche rated
dv/dt rated
Ideal for fast switching buck converter
IPD14N03L
Product Summary
VDS
RDS(on)
ID
30
13.5
30
V
m
A
P- TO252 -3-11
Type
IPD14N03L
Package
Ordering Code Marking
P- TO252 -3-11 Q67042-S4111 14N03L
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current1)
ID
TC=25°C
Pulsed drain current
TC=25°C
Avalanche energy, single pulse
ID=20A, VDD=25V, RGS=25
Repetitive avalanche energy, limited by Tjmax2)
Reverse diode dv/dt
IS=30A, VDS=-V, di/dt=200A/µs, Tjmax=175°C
Gate source voltage
Power dissipation
TC=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
ID puls
EAS
EAR
dv/dt
VGS
Ptot
Tj , Tstg
Value
30
30
120
20
7
6
±20
75
-55... +175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
Page 1
2003-01-17

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Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - case
www.DataSheetT4Uh.ecormmal resistance, junction - ambient, leaded
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area 3)
IPD14N03L
Symbol
Values
Unit
min. typ. max.
RthJC
RthJA
RthJA
- 1.3 2 K/W
- - 100
- - 75
- - 50
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage
VGS=0V, ID=1mA
Gate threshold voltage, VGS = VDS
ID = 30 µA
Zero gate voltage drain current
VDS=30V, VGS=0V, Tj=25°C
VDS=30V, VGS=0V, Tj=125°C
Gate-source leakage current
VGS=20V, VDS=0V
Drain-source on-state resistance
VGS=4.5V, ID=20A
Drain-source on-state resistance
VGS=10V, ID=20A
V(BR)DSS 30
-
-V
VGS(th)
1.2 1.6
2
I DSS
I GSS
µA
- 0.01 1
- 10 100
- 1 100 nA
RDS(on)
- 16.1 20 m
RDS(on)
- 10.8 13.5
1Current limited by bondwire ; with an RthJC = 2K/W the chip is able to carry ID= 59A at 25°C, for detailed
information see app.-note ANPS071E available at www.infineon.com/optimos
2Defined by design. Not subject to production test.
3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
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2003-01-17

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IPD14N03L
Electrical Characteristics
Parameter
Dynamic Characteristics
Transconductance
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Input capacitance
Output capacitance
Reverse transfer capacitance
Gate resistance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Output charge
Gate plateau voltage
Reverse Diode
Inverse diode continuous
forward current
Inv. diode direct current, pulsed
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
Symbol
Conditions
Values
Unit
min. typ. max.
gfs
Ciss
Coss
Crss
RG
t d(on)
tr
td(off)
tf
VDS2*ID*RDS(on)max,
ID=20A
VGS=0V, VDS=25V,
f=1MHz
VDD=15V, VGS=10V,
ID=15A,
RG=8.5
24
-
-
-
-
-
-
-
-
48 - S
740
290
80
1.5
5.9
30.4
26.6
11
990 pF
385
120
-
8.9 ns
45.6
39.9
21
Qgs
Qgd
Qg
VDD=15V, ID=15A
VDD=15V, ID=15A,
VGS=0 to 5V
Qoss
VDS=15V, ID=15A,
VGS=0V
V(plateau) VDD=15V, ID=15A
- 2.5 3.1 nC
- 6.2 9.3
- 10.6 13.3
- 10.24 12.8 nC
- 3.4 - V
IS
ISM
VSD
trr
Qrr
TC=25°C
VGS=0V, IF=30A
VR=-V, IF=lS,
diF/dt=100A/µs
- - 30 A
- - 120
- 0.9 1.2 V
- 21.7 27.1 ns
- 13.7 17.2 nC
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2003-01-17

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1 Power dissipation
Ptot = f (TC)
IPD14N03L
80
W
www.DataSheet4U.com
60
50
40
30
20
10
00 20 40 60 80 100 120 140 160 °C 190
TC
3 Safe operating area
ID = f ( VDS )
parameter : D = 0 , TC = 25 °C
10 3 IPD14N03L
A
10 2
tp = 5.7µs
10 µs
2 Drain current
ID = f (TC)
parameter: VGS10 V
IPD14N03L
32
A
IPD14N03L
24
20
16
12
8
4
00 20 40 60 80 100 120 140 160 °C 190
TC
4 Max. transient thermal impedance
ZthJC = f (tp)
parameter : D = tp/T
10 1 IPD14N03L
K/W
10 0
10 1
10
0
10
-1
10 0
100 µs
1 ms
10 ms
DC
10 1 V 10 2
VDS
Page 4
10 -1
10 -2
single pulse
D = 0.50
0.20
0.10
0.05
0.02
0.01
10
-3
10
-7
10 -6
10 -5
10 -4
10 -3
10 -2
s 10 0
tp
2003-01-17

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IPD14N03L
5 Typ. output characteristic
ID = f (VDS); Tj=25°C
parameter: tp = 80 µs
IPD14N03L
75 Ptot = 75W
A
www.DataSheet4U.com
60
55
50
45
40
35
30
25
20
k
VGS [V]
a 2.6
b 2.8
j
c 3.0
d 3.2
e 3.4
if
g
3.6
3.8
h 4.0
h
i 4.2
j
g
k
4.5
10.0
f
15 e
10 d
5
c
b
a
00 1 2 3 4 V 6
VDS
7 Typ. transfer characteristics
ID= f ( VGS ); VDS2 x ID x RDS(on)max
parameter: tp = 80 µs
100
A
80
70
60
50
40
30
20
10
00 1 2 3 4 V 5.5
VGS
6 Typ. drain-source on resistance
RDS(on) = f (ID)
parameter: VGS
IPD14N03L
50
m
f g hi
j
40
35
30
25
20
15
10
VGS [V] =
5f ghi j k
3.6 3.8 4.0 4.2 4.5 10.0
00 10 20 30 40
k
50 A 65
ID
8 Typ. forward transconductance
gfs = f(ID); Tj=25°C
parameter: gfs
70
S
60
55
50
45
40
35
30
25
20
15
10
5
00 20 40 60 80 A 120
ID
Page 5
2003-01-17