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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3322
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3322 is N-Channel DMOS FET device that
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features a low gate charge and excellent switching
characteristics, and designed for high voltage
applications such as switching power supply, AC
adapter.
ORDERING INFORMATION
PART NUMBER
2SK3322
2SK3322-S
2SK3322-ZJ
2SK3322-ZK
PACKAGE
TO-220AB (MP-25)
TO-262
TO-263(MP-25ZJ)
TO-263(MP-25ZK)
FEATURES
Low gate charge :
QG = 15 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 5.5 A)
Gate voltage rating : ±30 V
Low on-state resistance :
RDS(on) = 2.2 MAX. (VGS = 10 V, ID = 2.8 A)
Avalanche capability ratings
Surface mount package available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
Total Power Dissipation (TA = 25°C)
PT1
Total Power Dissipation (TC = 25°C)
PT2
Channel Temperature
Tch
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg
IAS
EAS
600
±30
±5.5
±20
1.5
65
150
55 to +150
4.0
10.7
Notes 1. PW 10 µs, Duty Cycle 1%
2. Starting Tch = 25°C, VDD = 150 V, RG = 25 , VGS = 20 0 V
V
V
A
A
W
W
°C
°C
A
mJ
The information contained in this document is being issued in advance of the production cycle for the
product. The parameters for the product may change before final production or NEC Electronics
Corporation, at its own discretion, may withdraw the product prior to its production.
Not all products and/or types are availabe in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D14114EJ2V0DS00 (2nd edition)
Date Published August 2003 NS CP(K)
Printed in Japan
The mark shows major revised points.
1999, 2000

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2SK3322
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Current
IDSS VDS = 600 V, VGS = 0 V
Gate Leakage Current
IGSS VGS = ±30 V, VDS = 0 V
Gate Cut-off Voltage
Forward Transfer Admittance Note
Drain to Source On-state Resistance Note
VGS(off)
| yfs |
RDS(on)
VDS = 10 V, ID = 1 mA
VDS = 10 V, ID = 2.8 A
VGS = 10 V, ID = 2.8 A
Input Capacitance
Ciss VDS = 10 V,
Output Capacitance
Coss
VGS = 0 V,
Reverse Transfer Capacitance
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Turn-on Delay Time
Crss
td(on)
f = 1 MHz
VDD = 150 V, ID = 2.8 A,
Rise Time
tr VGS = 10 V,
Turn-off Delay Time
td(off)
RG = 10
Fall Time
tf
Total Gate Charge
QG VDD = 450 V,
Gate to Source Charge
QGS VGS = 10 V,
Gate to Drain Charge
Body Diode Forward Voltage Note
QGD
VF(S-D)
ID = 5.5 A
IF = 5.5 A, VGS = 0 V
Reverse Recovery Time
Reverse Recovery Charge
trr IF = 5.5 A, VGS = 0 V,
Qrr di/dt = 50 A/µs
Note Pulsed
MIN.
2.5
1.0
TYP.
1.7
550
115
13
12
10
35
12
15
4
4.4
1.0
1.6
5.3
MAX.
100
±10
3.5
2.2
UNIT
µA
µA
V
S
pF
pF
pF
Ns
ns
ns
ns
nC
nC
nC
V
µs
µC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
RG = 25
PG.
VGS = 20 0 V
50
L
VDD
ID
VDD
IAS BVDSS
VDS
Starting Tch
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG
PG.
VGS
0
τ
τ = 1 µs
Duty Cycle 1%
RL
VDD
VGS
VGS
Wave Form
10%
0
VGS 90%
ID 90%
ID
Wave Form
0 10%
td(on)
ID
tr td(off)
90%
10%
tf
ton toff
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
IG = 2 mA
PG. 50
RL
VDD
2 Data Sheet D14114EJ2V0DS

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TYPICAL CHARACTERISTICS (TA = 25°C)
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
Pulsed
10
VGS = 10 V
8.0 V
6.0 V
5
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0
0 10 20 30 40 50
VDS - Drain to Source Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE
vs. CHANNEL TEMPERATURE
5
VDS = 10 V
ID = 1 mA
4
3
2
1
0
50 0
50 100 150
Tch - Channel Temperature - ˚C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
3
Pulsed
ID = 4.0 A
2 2.8 A
1
0
0 5 10 15
VGS - Gate to Source Voltage - V
2SK3322
FORWARD TRANSFER CHARACTERISTICS
100 VDS = 10 V
Pulsed
10
1
Tch = 125˚C
75˚C
25˚C
0.1 25˚C
0.01
0
5 10
VGS - Gate to Source Voltage - V
15
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
10
Tch = 25˚C
25˚C
75˚C
125˚C
1
VDS = 10 V
0.1 Pulsed
0.1
1
ID - Drain Current - A
10
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
3
VGS = 10 V
20 V
2
1
0
0.1 1
Pulsed
10 100
ID - Drain Current - A
Data Sheet D14114EJ2V0DS
3

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DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
4
ID = 4.0 A
3 2.8 A
2
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1
0
50
VGS = 10 V
Pulsed
0 50 100
Tch - Channel Temperature - ˚C
150
10000
1000
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VGS = 0 V
f = 1 MHZ
Ciss
100
Coss
10
Crss
1
0.1 1 10 100
VDS - Drain to Source Voltage - V
10000
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt = 50 A/µS
VGS = 0 V
1000
100
10
0.01
0.1 1
ID - Drain Current - A
10
2SK3322
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
10
0
VGS = 10 V
0.1 0 V
0.01
0
Pulsed
0.5 1 1.5
VSD - Source to Drain Voltage - V
SWITCHING CHARACTERISTICS
100
10
td(off)
td(on)
tf
tr
1
0.1
0.1
VDD = 150 V
VGS = 10 V
RG = 10
1 10
ID - Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
600
400
200
0
0
VDD = 450 V
300 V
150 V
16
ID = 4.0 A
14
12
10
VGS 8
6
4
VDS 2
4 8 12
QG - Gate Charge - nC
0
16
4 Data Sheet D14114EJ2V0DS

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2SK3322
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
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20
0
0 20 40 60 80 100 120 140 160
Tch - Channel Temperature - ˚C
FORWARD BIAS SAFE OPERATING AREA
100 TC = 25˚C
Single Pulse
ID(pulse) PW
10
1
RDS(on) Limited
ID(DC)
100
=
µs
10
µs
Power
1 ms
Dissipa1t0iomnsLimited
0.1
1 10 100 1000
VDS - Drain to Source Voltage - V
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140 160
TC - Case Temperature - ˚C
1000
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100 Rth(ch-A) = 83.3˚C/W
10
Rth(ch-C) = 1.93˚C/W
1
0.1
0.01
10µ
100 µ 1 m
10 m 100 m
1
PW - Pulse Width - sec
Single Pulse
10 100 1000
Data Sheet D14114EJ2V0DS
5