PD27025F.pdf 데이터시트 (총 4 페이지) - 파일 다운로드 PD27025F 데이타시트 다운로드

No Preview Available !

PD27025F
25 W, 2.5GHz - 2.7GHz , N-Channel E-Mode, Lateral MOSFET
Introduction
The PD27025F is a high-voltage, gold-metalized,
laterally diffused metal oxide semiconductor
www.DataSheet4U.com
(LDMOS) RF power transistor suitable for
2.5GHz - 2.7GHz Class AB wireless base
station
amplifier applications.
This device is manufactured on an advanced LDMOS
technology, offering state-of-the-art performance,
reliability, and thermal resistance. Packaged in an
industry-standard CuW package capable of deliver
ing a minimum output power of 25 W, it is ideally
suited for today's RF power amplifier applications.-
Table 1. Thermal Characteristics
Parameter
Thermal Resistance,
Junction to Case:
Sym
R JC
Value
2.1
Unit
°C/W
Table 2. Absolute Maximum Ratings*
Parameter
Drain-source Voltage
Gate-source Voltage
Drain Current—Continuous
Sym Value Unit
VDSS 65 Vdc
VGS –0.5, +15 Vdc
ID 4.25 Adc
Total Dissipation at TC = 70 °C: PD 83.5 W
Derate Above 70 °C:
— 0.48 W/°C
Operating Junction Tempera-
ture
TJ
200 °C
Storage Temperature Range TSTG –65, +150 °C
PD27025F (flanged)
Figure 1. Available Packages
Features
Application Specific Performance, 2.7 GHz
Typical 2-Tone Performance
Average Load Power – 12.5 W
ηD – 30%
Power Gain – 11.5 dB
IMD3: -30dBc @ -100kHz/ +100KHz
Typical CW Performance
Average Load Power – 25 W
ηD – 38%
Power Gain – 11.0 dB
* Stresses in excess of the absolute maximum ratings can cause
permanent damage to the device. These are absolute stress rat-
ings only. Functional operation of the device is not implied at
these or any other conditions in excess of those given in the
operational sections of the data sheet. Exposure to absolute
maximum ratings for extended periods can adversely affect
device reliability.
Table 3. ESD Rating*
HBM
MM
CDM
Minimum (V)
500
50
1500
Class
1B
A
4
* Although electrostatic discharge (ESD) protection circuitry has
been designed into this device, proper precautions must be
taken to avoid exposure to ESD and electrical overstress (EOS)
during all handling, assembly, and test operations. Agere
employs a human-body model (HBM), a machine model (MM),
and a charged-device model (CDM) qualification requirement in
order to determine ESD-susceptibility limits and protection
design evaluation. ESD voltage thresholds are dependent on the
circuit parameters used in each of the models, as defined by
JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM), and
JESD22-C101A (CDM) standards.
Caution: MOS devices are susceptible to damage from elec-
trostatic charge. Reasonable precautions in han-
dling and packaging MOS devices should be
observed.

No Preview Available !

PD27025F
25 W, 2.5GHz - 2.7GHz , N-Channel E-Mode, Lateral MOSFET
Electrical Characteristics
Recommended operating conditions apply unless otherwise specified: TC = 30 °C.
Table 4. dc Characteristics
Parameter
Symbol Min Typ Max Unit
Off Characteristics
Drain-source Breakdown Voltage (VGS = 0, ID = 100 u A )
Gate-source Leakage Current (VGS =15V, VDS = 0 V)
V(BR)DSS
IGSS
65
— — Vdc
— 1.0 µAdc
Zero Gate Voltage Drain Leakage Current (VDS = 28 V, VGS = 0 V) IDSS — — 1.0 mAdc
www.DataSheet4U.com
On Characteristics
Forward Transconductance (VDS = 10 V, ID = 1.0 A)
Gate Threshold Voltage (VDS = 10 V, ID = 1 mA )
Gate Quiescent Voltage (VDS = 28 V, IDQ = 330 mA)
Gm
VGS(TH)
VGS(Q)
1 3—
— 3.5 —
3.0 4.0 5.0
S
Vdc
Vdc
Drain-source On-voltage (VGS = 10 V, ID = 1.0 A)
VDS(ON)
— 0.33 Vdc
Table 5. RF Characteristics
Rating
Input capacitance * (including matching capacitor)
(VDS=28V, VGS=0V, f = 1MHz)
Output capacitance * (including matching capacitor)
(VDS= 28V, VGS=0V, f = 1MHz)
Feedback capacitance *
(VDS=28V, VGS=0V, f = 1MHz)
* Part is internally matched on input and output.
Symbol
CISS
COSS
CRSS
Min Typ
- 74
- 352
- 1.6
RF and Functional Tests (InBroadband Fixture, Tc=25° C unless otherwise specified)
Rating
Symbol
Min Typ
CW Low Power Gain, Pout=8W
VDD=28V, IDQ=330mA, f=2700MHz
CW Power Gain, Pout = 25 W
VDD=28V, IDQ=330mA, f=2700MHz
CW Drain Efficiency, Pout = 25 W,
VDD=28V, IDQ=330mA, f=2700MHz
Two-Tone Common-Source Amplifier Power Gain
VDD=28V, IDQ=330mA, Pout = 25 W PEP
f1 =2700 MHz and f2=2700.1 MHz
Two-Tone Intermodulation Distortion
VDD=28V, IDQ=330mA, Pout = 25 W PEP
f1 =2700 MHz and f2=2700.1 MHz
Two-Tone Drain Efficiency
VDD=28V, IDQ=330mA, Pout = 25 W PEP
f1 =2700 MHz and f2=7500.1 MHz
Input Return Loss
VDD =28V, Pout = 25 W PEP, IDQ=330mA
f1 =2500 MHz and 2700 MHz, Tone Spacing =
100kHz
Load Mismatch Tolerance
VDS=28V, IDQ= 330 mA, Pout=25W, f=2500 MHz
GL
GP
ηD
GTT
IMD
ηD2Τ
IRL
VSWR
12.5 -
12 -
35 40
12.5 -
- -30
26 30
--
10:1 -
2
Max
-
-
-
Max
-
-
-
-
- 28
-
-9
-
Unit
pF
pF
pF
Unit
dB
dB
%
dB
dBc
%
dB
Ψ

No Preview Available !

PD27025F
N-Channel E-Mode, Lateral MOSFET
Package Dimensions
All dimensions are in inches. Tolerances are ±0.005 in. unless specified.
www.DataSheet4U.com
1
PEAK DEVICES
PD27025F
3
XXXX
2
1
3
2
PINS:
1. DRAIN
2. GATE
3. SOURCE
XXXX - 4 Digit Trace Code

No Preview Available !

PD27025F
25 W, 2.5GHz - 2.7GHz , N-Channel E-Mode, Lateral MOSFET
RF Power Product Information
For product and application information, please visit our website: WWW.PEAKDEVICES.COM
www.DataSheet4U.com
AT C is a registered trademark of American Technical Ceramics Corp.
K emet is a registered trademark of KRC Trade Corporation.
S prague is a registered trademark of Sprague Electric Company Corporation.
.Murata is a registered trademark of Murata Electronics North America, Inc
K reger is a registered trademark of Kreger Components, Inc.
Vitramon is a registered trademark of Vitramon Incorporated.
Taconic is a registered trademark of Tonoga Limited DBA Taconic Plastics Ltd.