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SKP06N60
SKA06N60
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled
Diode
75% lower Eoff compared to previous generation
combined with low conduction losses
Short circuit withstand time – 10 s
Designed for: Motor controls, Inverter
NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
Very soft, fast recovery anti-parallel Emitter Controlled
Diode
PG-TO-220-3-1
(TO-220AB)
Isolated TO-220, 2.5kV, 60s
Pb-free lead plating; RoHS compliant
Qualified according to JEDEC1 for target applications
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
C
G
E
PG-TO-220-3-31 / -111
(FullPAK)
Type
SKP06N60
SKA06N60
VCE IC VCE(sat) Tj Marking Package
600V
6A
2.3V
150C K06N60 PG-TO-220-3-1
600V
5A
2.3V
150C K06N60 PG-TO-220-3-31 / -111
1 J-STD-020 and JESD-022
1
Rev. 2.4 12.06.2013

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Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
TC = 25C
TC = 100C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area VCE 600V, Tj 150C
Diode forward current
TC = 25C
TC = 100C
Diode pulsed current, tp limited by Tjmax
Gate-emitter voltage
Short circuit withstand time2
VGE = 15V, VCC 600V, Tj 150C
Power dissipation
TC = 25C
Mounting Torque, Screw: M2.5 (Fullpak), M3 (TO220)3
Operating junction and storage temperature
Soldering temperature
wavesoldering, 1.6 mm (0.063 in.) from case for 10s
SKP06N60
SKA06N60
Symbol
VCE
IC
ICpuls
-
IF
IFpuls
VGE
tSC
Ptot
M
Tj , Tstg
Ts
Value
Unit
SKP06N60 SKA06N60
600 600 V
A
12 9
6.9 5.0
24 24
24 24
12 12
66
24 24
20 20 V
s
10 10
W
68 32
0.6 0.5 Nm
-55...+150 -55...+150 C
260 260 °C
2 Allowed number of short circuits: <1000; time between short circuits: >1s.
3 Maximum mounting processes: 3
2
Rev. 2.4 12.06.2013

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SKP06N60
SKA06N60
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction – case
Thermal resistance,
junction – ambient
Symbol Conditions
Max. Value
Unit
SKP06N60 SKA06N60
RthJC
RthJCD
RthJA
PG-TO-220-3-1
PG-TO220-3-31 /-111
1.85
3.5
62
3.9 K/W
5.0
65
Electrical Characteristic, at Tj = 25 C, unless otherwise specified
Parameter
Symbol
Conditions
min.
Value
Typ.
Unit
max.
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Diode forward voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
Dynamic Characteristic
V(BR)CES
VCE(sat)
VF
VGE(th)
ICES
IGES
gfs
VGE=0V, IC=500A
VGE = 15V, IC=6A
Tj=25C
Tj=150C
VGE=0V, IF=6A
Tj=25C
Tj=150C
IC=250A,VCE=VGE
VCE=600V,VGE=0V
Tj=25C
Tj=150C
VCE=0V,VGE=20V
VCE=20V, IC=6A
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Ciss
Coss
Crss
QGate
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current2)
LE
IC(SC)
VCE=25V,
VGE=0V,
f=1MHz
VCC=480V, IC=6A
VGE=15V
VGE=15V,tSC10s
VCC 600V,
Tj 150C
600
1.7
-
1.2
-
3
-
-
-
-
-
-
-
-
-
-
-
2.0
2.3
1.4
1.25
4
-
-
-
4.2
350
38
23
32
7
60
-V
2.4
2.8
1.8
1.65
5
A
20
700
100 nA
-S
420 pF
46
28
42 nC
- nH
-A
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
3
Rev. 2.4 12.06.2013