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T10A series Sibod
FEATURES
G Glass passivated junction
G High current diverting capability (150A, 8x20µs)
G Low capacitance, less than 100pF
G UL recognized
G Automatic reset
G Does not degrade
0.76
0.86
APPLICATION
G Bi-directional device for telephone and line card protection
ELECTRICAL CHARACTERISTICS (Tamb = +25°C)
SYMBOL
PARAMETER
VRM Stand-off Voltage
VBR Breakdown Voltage
www.DataSheVIHRet4U.coHCmoonldtiinnguoCuusrrReenvterse Voltage
25.4 min
6.10
6.47
3.05
3.25
ABSOLUTE RATINGS (limiting values) (Tj = + 25°C) L = 10mm
SYMBOL
P
Ipp
PARAMETER
Power dissipation on infinite heatsink
Peak Pulse Current
Itsm
di/dt
T stg
Tj
Tl
Non-repetitive surge peak on-state current
Critical rate of rise of on-state current
Storage and operating junction
Temperature range
Maximum lead temperature for soldering
during 10s at 4mm from case
Tamb = 50°C
10x1000µsec
10/700 1.5KV
8-20 us expo
tp = 20 ms
Non repetitive
VALUE
1.7
50
37.5
100
30
100
-40 to 150
150
230
UNIT
W
A
A
A/us
°C
°C
°C
25.4 min
All dimensions in mm
THERMAL RESISTANCES
SYMBOL
PARAMETER
Rth(j-i)
Rth(j-a)
Junction-leads on infinite heatsink
Junction-ambient on printed circuit
All parameters are tested using Fet Test ™ Model 3600
L = 10mm
VALUE
60
100
UNIT
°C/W
°C/W
DEVICE
TYPE
T10A062
T10A068
T10A100
T10A120
T10A130
T10A180
T10A200
T10A220
T10A240
T10A270
IRM @ VRM
max
µA V
2 56
2 61
2 90
2 108
2 117
2 162
2 180
2 198
2 216
2 243
IR @ VR
max
µA V
50 62
50 68
50 100
50 120
50 130
50 180
50 200
50 220
50 240
50 270
VBO @ IBO
max
V mA
82 800
90 800
133 800
160 800
173 800
240 800
267 800
293 800
320 800
370 800
IH
min
mA
150
150
150
150
150
150
150
150
150
150
ORDERING INFORMATION
T10A
Voltage
Holding
Current Optio n
Packaging Option
B = Bulk (500 pcs)
T = Tape and reeled (1500 pcs)
54 w w w . l i t t e l f u s e . c o m