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Advanced Power
Electronics Corp.
AP60N03S
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Low On-Resistance
Fast Switching
Simple Drive Requirement
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Description
GDS
TO-263
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-263 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP60N03P) is available for low-profile applications.
BVDSS
RDS(ON)
ID
30V
13.5mΩ
55A
D
G
S
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Rating
30
± 20
55
35
215
62.5
0.5
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
Max.
Max.
Value
2.0
62
Unit
/W
/W
Data & specifications subject to change without notice
200218032

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AP60N03S
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
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VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA
Static Drain-Source On-Resistance VGS=10V, ID=28A
VGS=4.5V, ID=22A
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=150oC)
Gate-Source Forward Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS=VGS, ID=250uA
VDS=10V, ID=28A
VDS=30V, VGS=0V
VDS=24V, VGS=0V
VGS= ± 20V
ID=28A
VDS=24V
VGS=5V
VDS=15V
ID=28A
RG=3.3Ω,VGS=10V
RD=0.53Ω
VGS=0V
VDS=25V
f=1.0MHz
30 -
-V
- 0.037 - V/
- 11.5 13.5 mΩ
- 18 20 mΩ
1 - 3V
- 30 -
S
- - 1 uA
- - 25 uA
- - ±100 nA
- 22.4 - nC
- 2.7 - nC
- 14 - nC
- 7.4 - ns
- 81 - ns
- 24 - ns
- 18 - ns
- 950 - pF
- 440 - pF
- 145 - pF
Source-Drain Diode
Symbol
Parameter
IS Continuous Source Current ( Body Diode )
ISM Pulsed Source Current ( Body Diode )1
VSD Forward On Voltage2
Test Conditions
VD=VG=0V , VS=1.3V
Tj=25, IS=55A, VGS=0V
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
Min. Typ. Max. Units
- - 55 A
- - 215 A
- - 1.3 V

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AP60N03S
200
T C =25 o C
150
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100
V G =10V
V G =8.0V
V G =6.0V
50
V G =4.0V
0
012345678
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
150
T C =150 o C
100
V G =10V
V G =8.0V
V G =6.0V
50
V G =4.0V
0
02468
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
20
I D = 28 A
18 T C =25 o C
16
14
12
10
3 4 5 6 7 8 9 10 11
V GS (V)
Fig 3. On-Resistance v.s. Gate Voltage
1.8
I D =28A
1.6 V G =10V
1.4
1.2
1
0.8
0.6
-50 0 50 100
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
150