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FPN430
FPN430A
C
BE
TO-226
PNP Low Saturation Transistor
These devices are designed for high current gain and low
saturation voltage with collector currents up to 2.0 A continuous.
Sourced from Process PB.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCEO
VCBO
VEBO
IC
TJ, Tstg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
30
35
5.0
2.0
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3) All voltages (V) and currents (A) are negative polarity for PNP transistors.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
PD Total Device Dissipation
RθJC Thermal Resistance, Junction to Case
RθJA Thermal Resistance, Junction to Ambient
Max
FPN430 / FPN430A
1.0
50
125
Units
V
V
V
A
°C
Units
W
°C/W
°C/W
1999 Fairchild Semiconductor Corporation

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PNP Low Saturation Transistor
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
BVCEO
BVCBO
Collector-Emitter Breakdown
Voltage
Collector-Base Breakdown Voltage
BVEBO
Emitter-Base Breakdown Voltage
ICBO Collector Cutoff Current
IEBO Emitter Cutoff Current
IC = 10 mA, IB = 0
IC = 100 µA, IE = 0
IE = 100 µA, IC = 0
VCB = 30 V, IE = 0
VCB = 30 V, IE = 0, TA = 100°C
VEB = 4.0 V, IC = 0
30
35
5.0
100
10
100
V
V
V
nA
µA
nA
ON CHARACTERISTICS*
hFE DC Current Gain
IC = 100 mA, VCE = 2.0 V
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 1.0 A, VCE = 2.0 V
IC = 2.0 A, VCE = 2.0 V
IC = 1.0 A, IB = 100 mA
VBE(sat)
VBE(on)
Base-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
IC = 2.0 A, IB = 200 mA
IC = 1.0 A, IB = 100 mA
IC = 1.0 A, VCE = 2.0 V
430
430A
430
430A
100
250
60
40
500
450
800
1.25
1.0
mV
mV
mV
V
V
SMALL SIGNAL CHARACTERISTICS
Cobo
FT
Output Capacitance
Transition Frequency
VCB = 10 V, IE = 0, f = 1.0 MHz
IC = 100 mA, VCE = 5.0 V,
f = 100 MHz
*Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%
NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors.
25 pF
100 MHz

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Typical Characteristics
PNP Low Saturation Transistor
(continued)
Base-Emitter Saturation
Voltage vs Collector Current
1.6
β = 10
1.4
1.2
1 - 40 °C
0.8
0.6 25 °C
125 °C
0.4
0.2
0.001
0.01 0.1
1
I C - COLLECTOR CURRENT (A)
10
Base-Emitter On Voltage vs
Collector Current
1.6
Vce = 2.0V
1.4
1.2
1
- 40 °C
0.8
0.6
25 °C
0.4 125 °C
0.2
0.0001
0.001
0.01
0.1
1
I C - COLLECTOR CURRENT (A)
10
Collector-Emitter Saturation
Voltage vs Collector Current
1.2
β = 10
1
125°C
- 40°C
0.8
0.6
25°C
0.4
0.2
0
0.01
0.1 1
I C - COLLECTOR CURRENT (A)
10
Input/Output Capacitance vs
Reverse Bias Voltage
120
f V=ce1=.02M.0HVz
100
C ibo
80
60
40 Cobo
20
0
0.1 0.5 1
10 20 50 100
V CE - COLLECTOR VOLTAGE (V)
Current Gain vs Collector Current
600
Vce = 2.0V
500
400 125°C
300
25°C
200
- 40°C
100
0
0.0001
0.001
0.01
0.1
1
I C - COLLECTOR CURRENT (A)
10
Power Dissipation vs
Ambient Temperature
1
TO-226
0.75
0.5
0.25
0
0 25 50 75 100 125 150
TEMPE RATURE (°C)

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This datasheet contains the design specifications for
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Rev. G