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SI LICON PNP EPITAXIAL TYPE (PCT PROCESS)
HIGH FREQUENCY AMPLIFIER APPLICATIONS.
INDUSTRIAL APPLICATIONS
Unit in mm
HIGH SPEED SWITCHING APPLICATIONS.
FEATURES
High Transition Frequency : f T=80MHz (Typ.)
High Breakdown Voltage : VCEO=-80V
: VcEO=- 60v
(2SA503)
(2SA504)
Low Saturation Voltage : VcE(sat)=-0.12V
(at I c=-150mA, I B=-15mA)
Complementary to 2SC503 and 2SC504.
(Typ.)
<1
X
<
sr-
d CO
<6
00.45
1
11
^05.08
A 3\
M
so
9
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC
Collector-Base Voltage
2SA503
2SA504
Collector-Emitter Voltage
2SA503
2SA504
SYMBOL
v CBO
VCEO
Emitter-Base Voltage
VEBO
Collector Current
ic
Base Current
Collector
Power Dissipation
Junction Temperature
Storage Temperature Range
Ta=25°C
Tc=25°C
IB
PC
T
i
T stg
RATING
-100
-80
-80
-60
-5
-600
-100
800
6
175
-65VL75
UNIT
V
V
V
mA
mA
mW
W
°C
°C
1. EMITTER
2. BASE
3. COLLECTOR(CASE)
JEDEC
EIAJ
TOSHIBA
TO - 39
TC - 5,TB - 5B
2 - 8B1A
Weight : 1.13g
ELECTRICAL CHARACTERISTICS
CHARACTERISTIC
(Ta=25°C)
SYMBOL
TEST CONDITION
MIN. TYP. MAX.
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
2SA503
2SA504
I CBO
lEBO
(^^
VCR=-80V, I E=0
V CB=-60V, IE=0
VEB=-5V, I C=0
VCE=-2V, IC=-150mA
- - -0.5
- -1.0
30 - 300
Collector- Emitter
Saturation Voltage
vCE(sat) I c=-150mA, I B=-15mA
- -0.12 -0.5
Base- Emitter
Saturation Voltage
Transition Frequency
VBE(sat)
fT
I c=-150mA, IB=-15mA
VcE=- 2v » IC=- 150mA
Collector Output Capacitance
Cob VCB=-10V,lE=0,f=lMHz
Base Intrinsic Resistance
rbb' VcE=-10V,lE=lmA,f=30MHz
Switching
Turn-on Time
ton
27QQ
OUTPUT
5
MS
'
,
mpu,t<
/pY7rr°
Time
Storage Time
Fall Time
tstg
DUTY
tf
VBb=3V Vpn=-15V
- -0.8 -1.5
50 80
- 22 30
- 12 30
- 60 -
- 450 -
- 80 -
Note : hFE Classification
: 30^90, Y : 50^150, GR : 100*300
UNIT
yA
yA
V
V
MHz
pF
Q
ns
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149

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1
2SA503-2SA504
)
SWITCHING CHARACTERISTICS
1
V CC
±uv
"
I c - —150mA
Ig2 " 15mA
500
t
-
et(i^""
To = 25°C
300
tf
%
"on
-200
-1 -3-5 -10 -30 -100 -300
BASE CURRENT
IB1 (mA N
-600
-400
200
ic
-16
.^ -14
V CE
COMMON
EMITTER
12 -T r> n nn V.
10
-8
_-6
.-4
-2
1.
=—I B 1 niA
-1 -2 -3 -4 —5
COLLECTOR-EMITTER VOLTAGE VCE (V)
hpE - Ic
3000
1000
500
300
100
50
30
.. VCR =-2V
1
.. Tc = 100
25
' _,
)5
in
-1 -3 -10 -30 -100 -300
COLLECTOR CURRENT
I c (mA)
1 -2
-3 -4 ^^
COLLECTOR- EMITTER VOLTAGE VCE (V.1
ic VCE
COMMON
EMITTER
-20
-18
1
600 Tc ~ -55*C
-16
14
-12
b— io
__-8
-6
^200
-4
lB = 2mA
=T -2
—3 -4
-5
COLLECTOR [ITTER VOLTAGE VCE (V)
VCE( sat
—3
" COMMON EMITTE]
-l
- ic
1
T'
—0.3
—0.1
-0.05
[
Tc= 100 °C
AIII.L^52f 5
O<
O CO
—0.01
-3 -10 -30 -100 -300 -1000
COLLECTOR CURRENT I c (mA)
TOSHIBA CORPORATION llllllllllllllllllllllllllllllllllllllllllllllllllHllllllllllllllllM
-150-

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2SA503-2SA504
1000
500
300
fT
VC E = -10V
:::-5
—3...
-3-5 -10 —30—50 -100 -300 —500
COLLECTOR CURRENT I c (mA)
c ob » c i"b
Vr
1
c.
100
^?J50
c
!i.^°6 r >.
1
1
30
>>d
5
1
0.1
0.3 0.5 1
3 5 10
30 50
REVERSE VOLTAGE VR (V)
V BE( sat - I c
]
-T)
COMMON EMITTER
-in ... Ic /Ic=10
-5
-1
HD
CO Eh
<<
ffl ra
-0.3
-0.1
... Tc=-55"C
01
25
10
-.
-1 -3 -5 -10 -30
COLLECTOR CURRENT
-100 300-500
I c (mA)
'J
5 .-t
PC Ta
T. Tc =-- Ta
INFINITE
(_
HEAT
B 1JV " ;
N
'?-
.
200X200X2 mm
HEAT SINK
(USING- RH-10)
© 100X100X2 mm Ai
HEAT SINK
(USINO RH-10)
:i) 50X50X2 mm A^
HEAT SINK
(USINQ RH-10)
1 NO HEAT SINK
heat sink With
y silicone grease to
\ keep contact
thermal
^ \A resistance small,
®
^^
s
^Xv
^
^
40 80 120 160 200 240
AMBIENT TEMPERATURE Ta CC)
TOSHIBA CORPORATIONiiilililiilitlilllftl*llllll*lllll*iiilMllliiiiiiiitliiltlllllltllttlliMiliiifilillli<llltlllllltlili*llt>lilMllltillllitilllllflllililliiitllllttlllllliniiiititltililltltlMlllilit I iiiiiiiiiiniillliiilli
151-