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2SJ291
Silicon P-Channel MOS FET
www.DataSheet4U.com
Application
High speed power switching
Features
Low on-resistance
High speed switching
Low drive current
4 V gate drive device can be driven from 5 V source
Suitable for switching regulator, DC-DC converter
Avalanche ratings
Outline
TO-220AB
D 123
1. Gate
G 2. Drain
(Flange)
3. Source
S
November 1996

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2SJ291
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
www.DataSheet4U.com Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Notes 1. PW 10 µs, duty cycle 1%
2. Value at TC = 25°C
3. Value at Tch = 25°C, Rg 50
Symbol
VDSS
VGSS
ID
I *1
D(pulse)
IDR
IAP*3
EAR*3
Pch*2
Tch
Tstg
Ratings
–60
±20
–20
–80
–20
–20
34
60
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
°C
°C
2

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2SJ291
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown
voltage
V(BR)DSS
–60
Gate to source breakdown
voltage
V(BR)GSS
±20
Gate to source leak current IGSS
Zero gate voltage drain current IDSS
www.DataSheet4U.com Gate to source cutoff voltage VGS(off)
Static drain to source on state RDS(on)
resistance
–1.0
Forward transfer admittance
Input capacitance
|yfs|
Ciss
10
Typ Max Unit
——V
——V
— ±10 µA
— –250 µA
— –2.25 V
0.05 0.065
0.07
16
2200
0.095
S
pF
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Coss
Crss
td(on)
Rise time
Turn-off delay time
Fall time
Body to drain diode forward
voltage
Body to drain diode reverse
recovery time
Note 1. Pulse test
tr
td(off)
tf
VDF
trr
1000
300
25
130 —
320 —
210 —
–1.1 —
160 —
pF
pF
ns
ns
ns
ns
V
ns
Test conditions
ID = –10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
VDS = –50 V, VGS = 0
ID = –1 mA, VDS = –10 V
ID = –10 A, VGS = –10 V*1
ID = –10 A, VGS = –4 V*1
ID = –10 A, VDS = –10 V*1
VDS = –10 V, VGS = 0,
f = 1 MHz
ID = –10 A, VGS = –10 V,
RL = 3
IF = –20 A, VGS = 0
IF = –20 A, VGS = 0,
diF/dt = 50 A/µs
3