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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
NPN Silicon Push-Pull
RF Power Transistor
. . . designed primarily for wideband large–signal output and driver amplifier
stages in the 30 to 500 MHz frequency range.
Specified 28 Volt, 500 MHz Characteristics —
Output Power = 100 W
Typical Gain = 9.5 dB (Class AB); 8.5 dB (Class C)
Efficiency = 55% (Typ)
Built–In Input Impedance Matching Networks for Broadband Operation
Push–Pull Configuration Reduces Even Numbered Harmonics
www.DataSheet4U.cGoomld Metallization System for High Reliability
100% Tested for Load Mismatch
Circuit board photomaster available upon request by
contacting RF Tactical Marketing in Phoenix, AZ.
2
6
5, 8 1, 4
7
3
The MRF393 is two transistors in a single package with separate base and collector leads
and emitters common. This arrangement provides the designer with a space saving
device capable of operation in a push–pull configuration.
PUSH–PULL TRANSISTORS
Order this document
by MRF393/D
MRF393
100 W, 30 to 500 MHz
CONTROLLED “Q”
BROADBAND PUSH–PULL
RF POWER TRANSISTOR
NPN SILICON
CASE 744A–01, STYLE 1
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TC = 25°C (1)
Derate above 25°C
VCEO
30
Vdc
VCBO
60
Vdc
VEBO
4.0
Vdc
IC 16 Adc
PD 270 Watts
1.54 W/°C
Storage Temperature Range
Junction Temperature
Tstg – 65 to +150
TJ 200
°C
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RθJC 0.65 °C/W
NOTE:
1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF push–pull
amplifier.
REV 7
©MMOotoTrOolaR, OIncL.A19R97F DEVICE DATA
MRF393
1

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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
OFF CHARACTERISTICS (1)
Collector–Emitter Breakdown Voltage (IC = 50 mAdc, IB = 0)
Collector–Emitter Breakdown Voltage (IC = 50 mAdc, VBE = 0)
Emitter–Base Breakdown Voltage (IE = 5.0 mAdc, IC = 0)
Collector Cutoff Current (VCB = 30 Vdc, IE = 0)
ON CHARACTERISTICS (1)
V(BR)CEO
V(BR)CES
V(BR)EBO
ICBO
DC Current Gain (IC = 1.0 Adc, VCE = 5.0 Vdc)
DYNAMIC CHARACTERISTICS (1)
hFE
Output Capacitance (VCB = 28 Vdc, IE = 0, f = 1.0 MHz)
FUNCTIONAL TESTS (2) — See Figure 1
www.DataSheet4UC.coommmon–Emitter Amplifier Power Gain
(VCC = 28 Vdc, Pout = 100 W, f = 500 MHz)
Collector Efficiency
(VCC = 28 Vdc, Pout = 100 W, f = 500 MHz)
Load Mismatch
(VCC = 28 Vdc, Pout = 100 W, f = 500 MHz,
VSWR = 30:1, all phase angles)
Cob
Gpe
η
ψ
NOTES:
1. Each transistor chip measured separately.
2. Both transistor chips operating in push–pull amplifier.
Min Typ Max Unit
30 — — Vdc
60 — — Vdc
4.0 —
— Vdc
— — 5.0 mAdc
20 — 100 —
40 75 95 pF
7.5 8.5 — dB
50 55 — %
No Degradation in Output Power
B1
C1
C3
C2
L1
Z1
C4
Z2
L2
D.U.T.
C10
C9
L5
C11
L3 B2
C7
Z3 Z5
C5 C6
Z4 Z6
L4
C8
C14
C13
L6
C15
+ 28 V
C12
C16
C1, C2, C7, C8 — 240 pF 100 mil Chip Cap
C3 — 15 pF 100 mil Chip Cap
C4 — 24 pF 100 mil Chip Cap
C5 — 33 pF 100 mil Chip Cap
C6 — 12 pF 100 mil Chip Cap
C9, C13 — 1000 pF 100 mil Chip Cap
C10, C14 — 680 pF Feedthru Cap
C11, C15 — 0.1 µF Ceramic Disc Cap
C12, C16 — 50 µF 50 V
L1, L2 — 0.15 µH Molded Choke with Ferrite Bead
L3, L4 — 2–1/2 Turns #20 AWG 0.200ID
L5, L6 — 3–1/2 Turns #18 AWG 0.200ID
B1, B2 — Balun 50 Semi Rigid Coax, 86 mil OD, 4Long
Z1, Z2 — 850 mil Long x 125 mil W. Microstrip
Z3, Z4 — 200 mil Long x 125 mil W. Microstrip
Z5, Z6 — 800 mil Long x 125 mil W. Microstrip
Board Material — 0.0325Teflon–Fiberglass, εr = 2.56,
Board Material — 1 oz. Copper Clad both sides.
Figure 1. 500 MHz Test Fixture
MRF393
2
MOTOROLA RF DEVICE DATA

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CLASS C
f = 100 MHz
140
120
100
225 MHz
400 MHz
500 MHz
80
60
40
20
0
0
www.DataSheet4U.com
VCC = 28 V
2 4 6 8 10 12 14 16 18
Pin, INPUT POWER (WATTS)
Figure 2. Output Power versus Input Power
20
80
f = 100 MHz
70
60
225 MHz
400 MHz
50 500 MHz
40
30
20
10 VCC = 13.5 V
0
0 2 4 6 8 10 12 14 16 18 20
Pin, INPUT POWER (WATTS)
Figure 3. Output Power versus Input Power
CLASS C
120 120
Pin = 10 W
8W
100 100
6W
80 80
60 60
Pin = 16 W
12 W
8W
40
20
12
f = 225 MHz
16 20 24
VCC, SUPPLY VOLTAGE (VOLTS)
28
Figure 4. Output Power versus Supply Voltage
40
20
12
f = 500 MHz
16 20 24
VCC, SUPPLY VOLTAGE (VOLTS)
28
Figure 5. Output Power versus Supply Voltage
2 f = 100 MHz
ZOL* = Conjugate of the optimum load impedance
ZOL* = into which the device output operates at a
2 ZOL* = given output power, voltage and frequency.
4
ZOL*
4
225
400 2 500
Zin
6
4
500
400
8
225
6
VCC = 28 V, Pout = 100 W
Zo = 20
f MHz
Zin
100 0.85 + j0
ZOL*
7.8 – j5.6
f = 100 MHz
8
225 0.58 + j2.6 5.0 – j3.2
400 3.00 + j5.9 3.2 – j0.6
500 4.80 + j3.0 2.9 + j1.2
NOTE: Zin & ZOL* are given from base–to–base
NOTE: and collector–to–collector respectively.
Figure 6. Series Equivalent Input/Output Impedance
140
120
100
80
60
40
20
0
0
f = 500 MHz
VCC = 28 V
ICQ = 200 mA
2 4 6 8 10 12 14 16 18
Pin, INPUT POWER (WATTS)
Figure 7. Class AB Output Power versus
Input Power
20
MOTOROLA RF DEVICE DATA
MRF393
3

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PACKAGE DIMENSIONS
Q
0.76 (0.030) M A M B M
R
www.DataSheet4U.com
D 4 PL
J
H
U 4 PL
M
12 34
K
–B–
56 78
K
L
G
–A–
N
F 4 PL
V 2 PL
C
E
–T–
SEATING
PLANE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
MILLIMETERS
INCHES
DIM MIN MAX MIN MAX
A 22.60 23.11 0.890 0.910
B 9.52 10.03 0.375 0.395
C 6.65 7.16 0.262 0.282
D 1.60 1.95 0.063 0.077
E 2.94 3.40 0.116 0.134
F 2.87 3.22 0.113 0.127
G 16.51 BSC
0.650 BSC
H 4.01 4.36 0.158 0.172
J 0.07 0.15 0.003 0.006
K 4.34 4.90 0.171 0.193
L 12.45 12.95 0.490 0.510
M 45_ NOM
45_ NOM
N 1.051 11.02 0.414 0.434
Q 3.04 3.35 0.120 0.132
R 9.90 10.41 0.390 0.410
U 1.02 1.27 0.040 0.050
V 0.64 0.89 0.025 0.035
STYLE 1:
PIN 1. EMITTER (COMMON)
2. COLLECTOR
3. COLLECTOR
4. EMITTER (COMMON)
5. EMITTER (COMMON)
6. BASE
7. BASE
8. EMITTER (COMMON)
CASE 744A–01
ISSUE C
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in
systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of
the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such
unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless
against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
Literature Distribution Centers:
USA: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036.
EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 5BP, England.
JAPAN: Nippon Motorola Ltd.; 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan.
ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong.
MRF393
4
*MRF393/D*MOTOROLA RF DEVICEMRDFA3T9A3/D