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OneNAND4G(KFW4G16Q2M-DEB5)
OneNAND2G(KFH2G16Q2M-DEB5)
OneNAND1G(KFG1G16Q2M-DEB5)
FLASH MEMORY
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OneNANDTM Specification
Density
1Gb
2Gb
4Gb
Part No.
KFG1G16Q2M-DEB5
KFH2G16Q2M-DEB5
KFW4G16Q2M-DEB5
VCC(core & IO)
1.8V(1.7V~1.95V)
1.8V(1.7V~1.95V)
1.8V(1.7V~1.95V)
Temperature
Extended
Extended
Extended
PKG
63FBGA(LF)
63FBGA(LF)
63FBGA(LF)
Version: Ver. 1.1
Date: July 20, 2005
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OneNAND4G(KFW4G16Q2M-DEB5)
OneNAND2G(KFH2G16Q2M-DEB5)
OneNAND1G(KFG1G16Q2M-DEB5)
FLASH MEMORY
1.0 INTRODUCTION
This specification contains information about the Samsung Electronics Company OneNAND‚ Flash memory product family. Section
1.0 includes a general overview, revision history, and product ordering information.
Section 2.0 describes the OneNAND device. Section 3.0 provides information about device operation. Electrical specifications and
timing waveforms are in Sections 4.0 though 6.0. Section 7.0 provides additional application and technical notes pertaining to use of
the OneNAND. Package dimensions are found in Section 8.0
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INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,
AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL
INFORMATION IN THIS DOCUMENT IS PROVIDED
ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.
1. For updates or additional information about Samsung products, contact your nearest Samsung office.
2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar
applications where Product failure could result in loss of life or personal or physical harm, or any military or
defense application, or any governmental procurement to which special terms or provisions may apply.
MuxOneNAND‚ is a trademark of Samsung Electronics Company, Ltd. Other names and brands may be claimed as the property of
their rightful owners.
Copyright © 2005, Samsung Electronics Company, Ltd
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OneNAND4G(KFW4G16Q2M-DEB5)
OneNAND2G(KFH2G16Q2M-DEB5)
OneNAND1G(KFG1G16Q2M-DEB5)
1.1 Revision History
Document Title
OneNAND
FLASH MEMORY
Revision History
Revision No. History
0.0 Initial Issue.
Draft Date
Oct. 26, 2004
www.DataSheet4U.com 0.1
1. Corrected Errata
2. Revised cache read flow chart
3. Revised standby current
4. Revised spare area description
5. Added CE don’t care state for Asynch Write, Load, Program, and Block
Erase timing diagram
Dec. 7, 2004
0.2 1. Corrected Errata
2. Added Copy-back Program Operation With Random Data Input
3. Pended Active Erase Current
4. Changed tBA from 11ns to 11.5ns
Dec. 24, 2004
0.3 1. Corrected the errata
Jan. 10, 2005
2. Revised typical value of ISB from 50uA to 10uA
3. Revised maximum value of ISB from 100uA to 50uA
4. Revised erase current as TBD
5. Revised maximum value of tCE, tAA and tACC from 70ns to 76ns
6. Revised Vcc-IO description
7. Revised Spare Area description
8. Added extra information on Controller Status Register
9. Added commands related to Interrupt Status Register bits
10. Revised Write Protection Status on Chapter 3.4.3
11. Revised Copy-Back Program Operation description
12. Added extra information on Multi-Block Erase Operation
13. Disabled FBA restriction in OTP operation
14. Revised Cache Read Flow Chart
15. Added ISB information on DDP
16. Revised Reset Parameter descriptions
17. Added RDY information on Warm Reset Timing diagram
18. Added information on Data Protection Timing During Power Down
19. Revised Interrupt pin rise and falling slope graph
20. Added restriction on address register setting on Dual Operations
21. Added restriction on address register setting on Cache Read Operation
0.4 1. Corrected the errata
2. Updated DC parameters to RMS values
3. Added QDP feature
4. Added Speed Information on Product Number
5. Revised tOEZ description
6. Revised OTP register setting restriction
7. Added ILI, ILO and ISB information on QDP
8. Added Boot Sequence Infrormation on Technical Notes
9. Added Cint Information
Feb. 25, 2005
0.4.1
1. Revised OTP Load Operation Flow Chart
Mar. 2, 2005
Remark
Preliminary
Preliminary
Preliminary
Preliminary
Preliminary
Preliminary
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OneNAND2G(KFH2G16Q2M-DEB5)
OneNAND1G(KFG1G16Q2M-DEB5)
Revision History
Revision No. History
1.0
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1. Corrected the errata
2. Added DFS restriction to Multi Block Erase.
3. Added Data Protection flow chart.
4. Removed Cache Read Operation.
5. Added additional information on command register.
6. Revised Interrupt status register information.
7. Added INT pin schematic.
8. Changed tPGM1 to 205 from 320us, tPGM2 to 220 from 350us.
9. Revised ECC Bypass description
10. Revised AC/DC parameters
11. Revised Reset Parameters and Timing Diagrams.
1.1 1. Corrected the errata
2. Deleted 2.65V/3.3V Device Descriptions.
3. Revised Data Protection Flow Chart.
4. Revised Invalid Block Table Creation Flow Chart.
5. Revised Multi Block Erase Description
FLASH MEMORY
Draft Date
May. 17, 2005
Remark
Final
Jul. 20, 2005
Final
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OneNAND4G(KFW4G16Q2M-DEB5)
OneNAND2G(KFH2G16Q2M-DEB5)
OneNAND1G(KFG1G16Q2M-DEB5)
FLASH MEMORY
1.2 Flash Product Type Selector
Samsung offers a variety of Flash solutions including NAND Flash, OneNANDand NOR Flash. Samsung offers Flash products
both component and a variety of card formats including RS-MMC, MMC, CompactFlash, and SmartMedia.
To determine which Samsung Flash product solution is best for your application, refer the product selector chart.
Application Requires
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Fast Random Read
Fast Sequential Read
Fast Write/Program
Multi Block Erase
Erase Suspend/Resume
Copyback
Lock/Unlock/Lock-Tight
ECC
Scalability
NAND
Samsung Flash Products
OneNAND
(EDC)
External (Hardware/Software)
(Max 64 Blocks)
(ECC)
Internal
NOR
X
1.3 Ordering Information
KF x xx16 Q 2 M - D E B 5
Samsung
OneNAND Memory
Device Type
G : Single Chip
H : Dual Chip
W: Quad Chip
Density
1G: 1Gb
2G: 2Gb
4G: 4Gb
Organization
x16 Organization
Operating Voltage Range
Q : 1.8V(1.7 V to 1.95V)
Speed
5 : 54MHz
6 : 66MHz
Product Line desinator
B : Include Bad Block
D : Daisy Sample
Operating Temperature Range
E = Extended Temp. (-30 °C to 85 °C)
Package
D : FBGA(Lead Free)
Version
1st Generation
Page Architecture
2 : 2KB Page
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