SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD5071
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEsat Collector-emitter saturation voltage IC=2.5 A;IB=0.8A
www.DataSheet4U.VcoBEmsat
Base-emitter saturation voltage
ICBO Collector cut-off current
IC=2.5 A;IB=0.8A
VCB=800V; IE=0
IEBO Emitter cut-off current
hFE DC current gain
fT Transition frequency
VF Diode forward voltage
tf Fall time
VEB=4V; IC=0
IC=0.5A ; VCE=5V
IC=0.5A ; VCE=10V
IF=3.5A
IC=3A;RL=66.7>;VCC=200V
IB1=0.8A;IB2=-1.6A
MIN TYP. MAX UNIT
8.0 V
1.5 V
10 µA
40 200 mA
8
3 MHz
2.0 V
0.4 µs
2