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HIGH-POWER GaAlAs IR EMITTERS
OD-880F
GLASS
DOME
.183 .152
.186 .154
.030
.040
www.DataSheet4U.com
1.00
MIN.
ANODE
(CASE)
.015
.209
.212
.100
.017
FEATURES
• High reliability liquid-phase epitaxially grown GaAlAs
• 880nm peak emission for optimum matching with
ODD-45W photodiode
• Wide range of linear power output
• Hermetically sealed TO-46 package
.041 • Narrow angle for long distance applications
• OD-880F1 selected to meet minimum radiant intensity
CATHODE
.036
.197 45°
.205
All surfaces are gold plated. Dimensions are nominal
values in inches unless otherwise specified. Window
caps are welded to the case.
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
PARAMETERS
TEST CONDITIONS
Total Power Output, Po
Radiant Intensity, Ie
OD-880F
OD-880F1
OD-880F
OD-880F1
IF = 100mA
Peak Emission Wavelength, λP
Spectral Bandwidth at 50%, ∆λ
IF = 50mA
Half Intensity Beam Angle, θ
Forward Voltage, VF
Reverse Breakdown Voltage, VR
Capacitance, C
IF = 100mA
IR = 10µA
VR = 0V
Rise Time
Fall Time
MIN
15
120
5
TYP
17
8
135
160
880
80
8
1.55
30
17
0.5
0.5
ABSOLUTE MAXIMUM RATINGS AT 25°C CASE
Power Dissipation1
Continuous Forward Current
Peak Forward Current (10µs, 400Hz)2
Reverse Voltage
Lead Soldering Temperature (1/16" from case for 10sec)
1Derate per Thermal Derating Curve above 25°C
2Derate linearly above 25°C
190mW
100mA
3A
5V
240°C
THERMAL PARAMETERS
Storage and Operating Temperature Range
-55°C to 100°C
Maximum Junction Temperature
100°C
Thermal Resistance, RTHJA1
Thermal Resistance, RTHJA2
350°C/W Typical
115°C/W Typical
1Heat transfer minimized by measuring in still air with minimum heat conducting through leads
2Air circulating at a rapid rate to keep case temperature at 25°C
MAX
1.9
UNITS
mW
mW/sr
nm
nm
Deg
Volts
Volts
pF
µsec
µsec
750 Mitchell Road, Newbury Park, California 91320
Phone: (805) 499-0335 Fax: (805) 499-8108
Email: sales@optodiode.com Web Site: www.optodiode.com
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HIGH-POWER GaAlAs IR EMITTERS
www.DataSheet4U.com
THERMAL DERATING CURVE
200
180
160
140
120
NO
HEAT SINK
100
80
60
40
20
0
25
50 75
AMBIENT TEMPERATURE (°C)
INFINITE
HEAT SINK
100
DEGRADATION CURVE
100
90
IF = 20mA
IF = 50mA
80
MAXIMUM PEAK PULSE CURRENT
10
t = 10µs
1 t = 100µs
t = 500µs
0.1
Ip
0.01
0.01
t
D
=
t
T
T
0.1 1 10
DUTY CYCLE, D (%)
RADIATION PATTERN
100
80
60
OD-880F
100
70
60
50
101
TCASE = 25° C
NO PRE BURN-IN PERFORMED
IF = 100mA
102 103
STRESS TIME, (hrs)
104
105
FORWARD I-V CHARACTERISTICS
4
3
2
1
0
0 1 2 34
FORWARD VOLTAGE, VF (volts)
SPECTRAL OUTPUT
100
5
6
40
20
0
–25 –20 –15 –10 –5 0 5 10 15 20 25
BEAM ANGLE, θ(deg)
POWER OUTPUT vs TEMPERATURE
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
–50
–25 0 25 50 75
AMBIENT TEMPERATURE (°C)
100
POWER OUTPUT vs FORWARD CURRENT
1,000
80
100
60
40
20
0
750
800 850 900 950
WAVELENGTH, λ(nm)
1,000
10 DC
PULSE
10µs, 100Hz
1
10
100
1,000
10,000
FORWARD CURRENT, IF (mA)
750 Mitchell Road, Newbury Park, California 91320
Phone: (805) 499-0335 Fax: (805) 499-8108
Email: sales@optodiode.com Web Site: www.optodiode.com
Page 2 of 2