STB4NB50.pdf 데이터시트 (총 6 페이지) - 파일 다운로드 STB4NB50 데이타시트 다운로드

No Preview Available !

® STB4NB50
N - CHANNEL 500V - 2.5- 3.8A - D2PAK/I2PAK
PowerMESHMOSFET
TYPE
VDSS
RDS(on)
ID
STB4NB50
500 V
< 2.8
3.8 A
www.DataSheet4Us.comTYPICAL RDS(on) = 2.5
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
PRELIMINARY DATA
123
3
1
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
I2PAK
TO-262
(suffix "-1")
D2PAK
TO-263
(Suffix "T4")
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR Drain- gate Voltage (RGS = 20 k)
VGS Gate-source Voltage
ID Drain Current (continuous) at Tc = 25 oC
ID Drain Current (continuous) at Tc = 100 oC
IDM() Drain Current (pulsed)
Ptot Total Dissipation at Tc = 25 oC
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
() Pulse width limited by safe operating area
Value
500
500
± 30
3.8
2.4
15.2
80
0.64
4.5
-65 to 150
150
(1) ISD 4 A, di/dt 200 A/µs, VDD V(BR)DSS, Tj TJMAX
Unit
V
V
V
A
A
A
W
W/oC
V/ns
oC
oC
October 1998
1/8

No Preview Available !

STB4NB50
THERMAL DATA
Rthj-case
Rthj-amb
Rthc-sink
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
1.56
62.5
0.5
300
oC/W
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symbol
IAR
www.DataSheet4U.com
EAS
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
Single Pulse Avalanche Energy
(starting Tj = 25 oC, ID = IAR, VDD = 50 V)
Max Value
3.8
220
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
V(BR)DSS Drain-source
Breakdown Voltage
ID = 250 µA VGS = 0
IDSS
IGSS
Zero Gate Voltage
VDS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating
Gate-body Leakage
Current (VDS = 0)
VGS = ± 30 V
Tc = 125 oC
Min.
500
Typ.
Max.
Unit
V
1
50
± 100
µA
µA
nA
ON ()
Symbol
VGS(th)
RDS(on)
ID(on)
Parameter
Test Conditions
Gate Threshold
Voltage
VDS = VGS ID = 250 µA
Static Drain-source On VGS = 10V ID = 1.9 A
Resistance
On State Drain Current VDS > ID(on) x RDS(on)max
VGS = 10 V
Min.
3
Typ.
4
Max.
5
Unit
V
2.5 2.8
3.8 A
DYNAMIC
Symbol
gfs ()
Ciss
Coss
Crss
Parameter
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max ID = 1.9 A
Min.
1.2
Typ.
2.3
Max.
Unit
S
VDS = 25 V f = 1 MHz VGS = 0
400 520
62 81
7.5 10
pF
pF
pF
2/8

No Preview Available !

STB4NB50
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
td(on)
tr
Parameter
Turn-on Time
Rise Time
Test Conditions
VDD = 250 V ID = 1.9 A
RG = 4.7
VGS = 10 V
Min.
Typ.
11
8
Max.
17
12
Unit
ns
ns
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
www.DataSheet4U.com
SWITCHING OFF
VDD = 400 V ID = 3.8 A VGS = 10 V
Symbol
tr(Voff)
tf
tc
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 400 V ID = 3.8 A
RG = 4.7 VGS = 10 V
Min.
14.5
6.5
5
Typ.
8
5
14
22
Max.
12
9
20
nC
nC
nC
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
ISDM()
Source-drain Current
Source-drain Current
(pulsed)
VSD () Forward On Voltage
ISD = 5.8 A VGS = 0
trr Reverse Recovery
Time
Qrr Reverse Recovery
Charge
ISD = 3.8 A di/dt = 100 A/µs
VDD = 100 V Tj = 150 oC
IRRM
Reverse Recovery
Current
() Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
() Pulse width limited by safe operating area
Min.
Typ.
Max.
3.8
15.2
Unit
A
A
1.6
245
980
8
V
ns
µC
A
3/8

No Preview Available !

STB4NB50
DIM.
A
A1
www.DataSheet4U.com B
B1
B2
C
C2
D
e
E
L
L1
L2
TO-262 (I2PAK) MECHANICAL DATA
MIN.
4.3
2.49
0.7
1.2
1.25
0.45
1.21
8.95
2.44
10
13.2
3.48
1.27
mm
TYP.
MAX.
4.6
2.69
0.93
1.38
1.4
0.6
1.36
9.35
2.64
10.28
13.5
3.78
1.4
MIN.
0.169
0.098
0.027
0.047
0.049
0.017
0.047
0.352
0.096
0.393
0.519
0.137
0.050
inch
TYP.
MAX.
0.181
0.106
0.036
0.054
0.055
0.023
0.053
0.368
0.104
0.404
0.531
0.149
0.055
L1
L2 D
L
P011P5/C
4/8

No Preview Available !

STB4NB50
www.DataSheet4U.com
DIM.
A
A1
B
B2
C
C2
D
E
G
L
L2
L3
L2
TO-263 (D2PAK) MECHANICAL DATA
MIN.
4.3
2.49
0.7
1.25
0.45
1.21
8.95
10
4.88
15
1.27
1.4
mm
TYP.
MAX.
4.6
2.69
0.93
1.4
0.6
1.36
9.35
10.28
5.28
15.85
1.4
1.75
MIN.
0.169
0.098
0.027
0.049
0.017
0.047
0.352
0.393
0.192
0.590
0.050
0.055
inch
TYP.
EA
C2
L
L3
MAX.
0.181
0.106
0.036
0.055
0.023
0.053
0.368
0.404
0.208
0.624
0.055
0.068
D
B2
B
G
A1
C
P011P6/C
5/8