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STB12NM60N/-1 - STF12NM60N
STP12NM60N - STW12NM60N
N-channel 600V - 0.35- 10A - D2/I2PAK - TO-220/FP - TO-247
Second generation MDmesh™ Power MOSFET
Features
www.DataSheet4U.com Type
VDSS
(@Tjmax)
RDS(on)
ID
STB12NM60N
STB12NM60N-1
STF12NM60N
STP12NM60N
STW12NM60N
650V
650V
650V
650V
650V
< 0.41
< 0.41
< 0.41
< 0.41
< 0.41
10A
10A
10A(1)
10A
10A
1. Limited only by maximum temperature allowed
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Description
This series of devices implements second
generation MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the Company’s strip layout to
yield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
Application
Switching application
Order codes
Part number
STB12NM60N
STB12NM60N-1
STF12NM60N
STP12NM60N
STW12NM60N
Marking
B12NM60N
B12NM60N
F12NM60N
P12NM60N
W12NM60N
3
1
D²PAK
123
I²PAK
3
2
1
TO-220
TO-247
3
2
1
TO-220FP
Internal schematic diagram
Package
D²PAK
I²PAK
TO-220FP
TO-220
TO-247
Packaging
Tape & reel
Tube
Tube
Tube
Tube
April 2007
Rev 2
1/18
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18

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Contents
Contents
STB12NM60N/-1 - STF12NM60N - STP12NM60N - STW12NM60N
1
2
www.DataSheet4U3.com
4
5
6
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
2/18

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STB12NM60N/-1 - STF12NM60N - STP12NM60N - STW12NM60N
1 Electrical ratings
Electrical ratings
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Table 1. Absolute maximum ratings
Symbol
Parameter
VDS Drain-source voltage (VGS=0)
VGS Gate-source voltage
ID Drain current (continuous) at TC = 25°C
ID Drain current (continuous) at TC = 100°C
IDM (2) Drain current (pulsed)
PTOT Total dissipation at TC = 25°C
dv/dt (3) Peak diode recovery voltage slope
VISO
Tj
Tstg
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1s;TC=25°C)
Operating junction temperature
Storage temperature
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. ISD 10A, di/dt 400A/µs, VDD =80% V(BR)DSS
Table 2. Thermal data
Symbol
Parameter
Rthj-case Thermal resistance junction-case max
Rthj-amb Thermal resistance junction-amb max
Tl
Maximum lead temperature for soldering
purpose
Value
D²PAK/I²PAK
TO-220/TO-247
TO-220FP
Unit
600 V
± 25
10
6.3
40
10 (1)
6.3 (1)
40 (1)
V
A
A
A
90 25 W
15 V/ns
--
2500
V
-55 to 150
°C
D²PAK/I²PAK
TO-220/TO-247
TO-220FP
Unit
1.38
62.5
5
°C/W
°C/W
300 °C
Table 3. Avalanche characteristics
Symbol
Parameter
IAS
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
Single pulse avalanche energy
EAS (starting Tj=25°C, ID=IAS, VDD= 50V)
Max value
3.5
200
Unit
A
mJ
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Electrical characteristics
STB12NM60N/-1 - STF12NM60N - STP12NM60N - STW12NM60N
2 Electrical characteristics
www.DataSheet4U.com
(TCASE=25°C unless otherwise specified)
Table 4. On/off states
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
V(BR)DSS
Drain-source breakdown
voltage
dv/dt(1) Drain-source voltage slope
IDSS
Zero gate voltage drain
current (VGS = 0)
IGSS
VGS(th)
RDS(on)
Gate body leakage current
(VDS = 0)
Gate threshold voltage
Static drain-source on
resistance
ID = 1mA, VGS= 0
VDD = 400V,ID = 10A,
VGS = 10V
VDS = Max rating,
VDS = Max rating,@125°C
VGS = ±20V
VDS= VGS, ID = 250µA
VGS= 10V, ID= 5A
600
2
41
3
0.35
1
10
100
4
0.41
V
V/ns
µA
µA
nA
V
1. Characteristics value at turn off on inductive load
Table 5. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
gfs(1)
Ciss
Coss
Crss
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS =15V, ID= 5A
VDS = 50V, f =1MHz,
VGS = 0
8S
960 pF
65 pF
7 pF
Coss
(2)
eq.
Equivalent output
capacitance
VGS = 0, VDS = 0V to 480V
180
pF
f=1MHz Gate DC Bias=0
Rg Gate input resistance
Test signal level=20mV
5
open drain
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD = 480V, ID = 10A
VGS = 10V
(see Figure 18)
30.5 nC
5 nC
16 nC
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
4/18

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STB12NM60N/-1 - STF12NM60N - STP12NM60N - STW12NM60N
Electrical characteristics
www.DataSheet4U.com
Table 6. Switching times
Symbol
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
VDD = 300V, ID = 5A,
RG = 4.7Ω, VGS = 10V
(see Figure 17)
Min Typ Max Unit
15 ns
9 ns
60 ns
10 ns
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min Typ Max Unit
ISD
ISDM (1)
VSD(2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 10A, VGS=0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD =10A, di/dt =100A/µs,
VDD = 100V, Tj = 25°C
(see Figure 19)
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
VDD = 100V
di/dt =100A/µs, ISD = 10A
Tj = 150°C (see Figure 19)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
10
40
1.3
360
3.5
20
530
5.20
20
A
A
V
ns
µC
A
ns
µC
A
5/18