08P06P.pdf 데이터시트 (총 9 페이지) - 파일 다운로드 08P06P 데이타시트 다운로드

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Preliminary data
SPD08P06P
SPU08P06P
SIPMOS® Power-Transistor
Features
Product Summary
· P-Channel
· Enhancement mode
www.DataSheet·4UA.cvomalanche rated
· dv/dt rated
Drain source voltage
VDS -60 V
Drain-source on-state resistance RDS(on) 0.3 W
Continuous drain current
ID -8.8 A
· 175°C operating temperature
Type
SPD08P06P
SPU08P06P
Package Ordering Code
P-TO252 Q67040-S4153
P-TO251-3-1 Q67040-S4154
Maximum Ratings,at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
TC = 25 °C
TC = 100 °C
ID
Pulsed drain current
TC = 25 °C
ID puls
Avalanche energy, single pulse
ID = -8.8 A , VDD = -25 V, RGS = 25 W
EAS
Avalanche energy, periodic limited by Tjmax
Reverse diode dv/dt
EAR
dv/dt
IS = -8.8 A, VDS = -48 , di/dt = 200 A/µs,
Tjmax = 175 °C
Gate source voltage
Power dissipation
TC = 25 °C
VGS
Ptot
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Tj , Tstg
Pin 1 PIN 2/4 PIN 3
GDS
Value
-8.8
-6.2
-35.2
70
4.2
6
Unit
A
mJ
kV/µs
±20
42
-55...+175
55/175/56
V
W
°C
Page 1
1999-11-22

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Preliminary data
SPD08P06P
SPU08P06P
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - case
www.DataSheet4TUh.ceormmal resistance, junction - ambient, leaded
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area 1)
Symbol
Values
Unit
min. typ. max.
RthJC
RthJA
RthJA
- - 3.6 K/W
- - 100
- - 75
- - 50
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
Static Characteristics
Drain- source breakdown voltage
VGS = 0 V, ID = -250 µA
Gate threshold voltage, VGS = VDS
ID = -250 µA, Tj = 25 °C
Zero gate voltage drain current
VDS = -60 V, VGS = 0 V, Tj = 25 °C
VDS = -60 V, VGS = 0 V, Tj = 150 °C
Gate-source leakage current
VGS = -20 V, VDS = 0 V
Drain-source on-state resistance
VGS = -10 V, ID = -6.2 A
V(BR)DSS -60
-
-
VGS(th) -2.1
-3
-4
IDSS
IGSS
- -0.1 -1
- -10 -100
- -10 -100
RDS(on) - 0.23 0.3
Unit
V
µA
nA
W
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Page 2
1999-11-22

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Preliminary data
SPD08P06P
SPU08P06P
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
Unit
Dynamic Characteristics
Transconductance
www.DataSheet4U.com
VDS³2*ID*RDS(on)max , ID = -6.2 A
Input capacitance
VGS = 0 V, VDS = -25 V, f = 1 MHz
Output capacitance
VGS = 0 V, VDS = -25 V, f = 1 MHz
Reverse transfer capacitance
VGS = 0 V, VDS = -25 V, f = 1 MHz
Turn-on delay time
VDD = -30 V, VGS = -10 V, ID = -6.2 A,
RG = 6 W
Rise time
VDD = -30 V, VGS = -10 V, ID = -6.2 A,
RG = 6 W
Turn-off delay time
VDD = -30 V, VGS = -10 V, ID = -6.2 A,
RG = 6 W
Fall time
VDD = -30 V, VGS = -10 V, ID = -6.2 A,
RG = 6 W
gfs
Ciss
Coss
Crss
td(on)
1.5 3.6
-S
- 335 420 pF
- 105 135
- 65 95
- 16 24 ns
tr - 46 69
td(off)
- 48 72
tf - 14 21
Page 3
1999-11-22

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Preliminary data
SPD08P06P
SPU08P06P
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
Unit
Dynamic Characteristics
Gate to source charge
www.DataSheet4U.com
VDD = -48 , ID = -8.8 A
Gate to drain charge
VDD = -48 V, ID = -8.8 A
Gate charge total
VDD = -48 V, ID = -8.8 A, VGS = 0 to -10 V
Gate plateau voltage
VDD = -48 , ID = -8.8 A
Qgs - 1.4 2.1 nC
Qgd - 4 6
Qg - 10 15
V(plateau) -
-3.85
-V
Parameter
Reverse Diode
Inverse diode continuous forward current
TC = 25 °C
Inverse diode direct current,pulsed
TC = 25 °C
Inverse diode forward voltage
VGS = 0 V, IF = -8.8 A
Reverse recovery time
VR = -30 V, IF=IS , diF/dt = 100 A/µs
Reverse recovery charge
VR = -30 V, IF=lS , diF/dt = 100 A/µs
Symbol
Values
Unit
min. typ. max.
IS - - -8.8 A
ISM - - -35.2
VSD - -1.17 -1.55 V
trr - 60 90 ns
Qrr - 100 150 nC
Page 4
1999-11-22

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Preliminary data
SPD08P06P
SPU08P06P
Power dissipation
Ptot = f (TC)
SPD08P06P
50
W
www.DataSheet4U.com40
Drain current
ID = f (TC)
parameter: VGS³ 10 V
SPD08P06P
-10
A
-8
35 -7
30 -6
25 -5
20 -4
15 -3
10 -2
5 -1
0
0
20 40 60 80 100 120 140 160°C 190
TC
Safe operating area
ID = f ( VDS )
parameter : D = 0 , TC = 25 °C
-10 2 SPD08P06P
A tp = 12.0µs
0
0
20 40 60 80 100 120 140 160°C 190
TC
Transient thermal impedance
ZthJC = f (tp)
parameter : D = tp/T
10 1 SPD08P06P
K/W
10 0
-10 1
100 µs
10 -1
-10 0
1 ms
10 ms
DC
10 -2
10 -3
single pulse
D = 0.50
0.20
0.10
0.05
0.02
0.01
-10
-1
-10
-1
-10 0
-10 1
V -10 2
VDS
Page 5
10
-4
10
-7
10 -6
10 -5
10 -4
10 -3
10 -2
s 10 0
tp
1999-11-22