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Freescale Semiconductor
Technical Data
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
Designed primarily for wideband applications with frequencies up to 250 MHz.
Device is unmatched and is suitable for use in broadcast applications.
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Power Gain — 25 dB
Drain Efficiency — 28.5%
ACPR @ 4 MHz Offset — - 61 dBc @ 4 kHz Bandwidth
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2600 mA,
100 μsec,
Duty
www.DataSheet4U.comPDorawinerEGffiaciinen—cy2—5.35d9B%
Capable of Handling 10:1 VSWR, @ 50 Vdc, 225 MHz, 600 Watts Peak
Power, Pulse Width = 100 μsec, Duty Cycle = 20%
Features
Integrated ESD Protection
Excellent Thermal Stability
Designed for Push - Pull Operation
Greater Negative Gate - Source Voltage Range for Improved Class C
Operation
RoHS Compliant
In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
Document Number: MRF6VP2600H
Rev. 1, 7/2008
MRF6VP2600HR6
10 - 250 MHz, 600 W, 50 V
LATERAL N - CHANNEL
BROADBAND
RF POWER MOSFET
CASE 375D - 05, STYLE 1
NI - 1230
PART IS PUSH - PULL
RFinA/VGSA 3
1 RFoutA/VDSA
RFinB/VGSB 4
2 RFoutB/VDSB
(Top View)
Figure 1. Pin Connections
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain - Source Voltage
Gate - Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Table 2. Thermal Characteristics
VDSS
VGS
Tstg
TC
TJ
- 0.5, +110
- 6.0, +10
- 65 to +150
150
200
Vdc
Vdc
°C
°C
°C
Characteristic
Symbol
Value (1,2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 99°C, 125 W CW
RθJC
0.20
°C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF6VP2600HR6
1

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Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
2 (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
Off Characteristics (1)
Gate - Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
Drain - Source Breakdown Voltage
(ID = 150 mA, VGS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current
www.DataSheet4(UV.DcSom= 50 Vdc, VGS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(VDS = 100 Vdc, VGS = 0 Vdc)
IGSS
10 μAdc
V(BR)DSS
110
— Vdc
IDSS
50 μAdc
IDSS
2.5 mA
On Characteristics
Gate Threshold Voltage (1)
(VDS = 10 Vdc, ID = 800 μAdc)
VGS(th)
1
1.65
3
Vdc
Gate Quiescent Voltage (2)
(VDD = 50 Vdc, ID = 2600 mAdc, Measured in Functional Test)
VGS(Q)
1.5
2.7
3.5 Vdc
Drain - Source On - Voltage (1)
(VGS = 10 Vdc, ID = 2 Adc)
VDS(on)
0.25
Vdc
Dynamic Characteristics (1)
Reverse Transfer Capacitance
(VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss — 1.7 — pF
Output Capacitance
(VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss — 101 —
pF
Input Capacitance
(VDS = 50 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
Ciss — 287 — pF
Functional Tests (2) (In Freescale Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 2600 mA, Pout = 125 W Avg., f = 225 MHz, DVBT
OFDM Single Channel. ACPR measured in 7.61 MHz Channel Bandwidth @ ±4 MHz Offset.
Power Gain
Gps 24 25 27 dB
Drain Efficiency
ηD 27 28.5 — %
Adjacent Channel Power Ratio
ACPR
- 61 - 59 dBc
Input Return Loss
IRL - 18 - 9 dB
1. Each side of device measured separately.
2. Measurement made with device in push - pull configuration.
MRF6VP2600HR6
2
RF Device Data
Freescale Semiconductor

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VBIAS
B1
L3
++ +
C16 C15 C14
C13 C12 C11
L2
C9 C8 C7 C10
C6
R1
L4
C19 C17 C18
VSUPPLY
+ ++
C20 C21 C22 C23 C24 C25
RF
INPUT Z1
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Z2 L1
C1
Z1
Z2*
Z3*
Z4
Z5, Z6
Z7, Z8
Z9, Z10
Z11, Z12
Z3 Z4
C2
J1
T1
Z5 Z7
Z6 Z8
Z9 Z11 Z13 Z15 Z17
DUT C3 C4
Z10 Z12 Z14 Z16 Z18
RF
Z19 Z20 OUTPUT
J2
C5
T2
1.049x 0.080Microstrip
0.143x 0.080Microstrip
0.188x 0.080Microstrip
0.192x 0.133Microstrip
0.418x 0.193Microstrip
0.217x 0.518Microstrip
0.200x 0.518Microstrip
0.375x 0.214Microstrip
Z13, Z14
Z15*, Z16*
Z17, Z18
Z19
Z20
PCB
0.224x 0.253Microstrip
0.095x 0.253Microstrip
0.052x 0.253Microstrip
0.053x 0.080Microstrip
1.062x 0.080Microstrip
Arlon CuClad 250GX - 0300 - 55 - 22, 0.030, εr = 2.55
* Line length includes microstrip bends
Figure 2. MRF6VP2600HR6 Test Circuit Schematic
Table 5. MRF6VP2600HR6 Test Circuit Component Designations and Values
Part Description
Part Number
B1 95 Ω, 100 MHz Long Ferrite Bead
2743021447
C1 47 pF Chip Capacitor
ATC100B470JT500XT
C2, C4
43 pF Chip Capacitors
ATC100B430JT500XT
C3 100 pF Chip Capacitor
ATC100B101JT500XT
C5 10 pF Chip Capacitor
ATC100B7R5CT500XT
C6, C9
2.2 μF, 50 V Chip Capacitors
C1825C225J5RAC
C7, C13, C20
10K pF Chip Capacitors
ATC200B103KT50XT
C8 220 nF, 50 V Chip Capacitor
C1812C224J5RAC
C10, C17, C18
1000 pF Chip Capacitors
ATC100B102JT50XT
C11, C22
0.1 μF, 50 V Chip Capacitors
CDR33BX104AKYS
C12, C21
20K pF Chip Capacitors
ATC200B203KT50XT
C14 10 μF, 35 V Tantalum Capacitor
T491D106K035AT
C15 22 μF, 35 V Tantalum Capacitor
T491X226K035AT
C16 47 μF, 50 V Electrolytic Capacitor
476KXM050M
C19 2.2 μF, Chip Capacitor
2225X7R225KT3AB
C23, C24, C25
470 μF 63V Electrolytic Capacitors
EKME630ELL471MK25S
J1, J2
Jumpers from PCB to T1 & T2
Copper Foil
L1 17.5 nH 6 Turn Inductor
B06T
L2 8 Turns, #20 AWG ID = 0.125Inductor, Hand Wound Copper Wire
L3 82 nH Inductor
1812SMS - 82NJ
L4*
9 Turns, #18 AWG Inductor, Hand Wound
Copper Wire
R1 20 Ω, 3 W Axial Leaded Resistor
5093NW20R00J
T1 Balun
TUI - 9
T2 Balun
TUO - 4
*L4 is wrapped around R1.
Manufacturer
Fair - Rite
ATC
ATC
ATC
ATC
Kemet
ATC
Kemet
ATC
Kemet
ATC
Kemet
Kemet
Illinois Cap
ATC
Multicomp
CoilCraft
CoilCraft
Vishay
Comm Concepts
Comm Concepts
RF Device Data
Freescale Semiconductor
MRF6VP2600HR6
3

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B1
C16
C13
C12
C11
C15
C14
C9
C8
C7
C6
L3
L2
C10
J1
T1
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C1 L1 C2
L4, R1*
C23
C22
C21
C20
-C24
C18
C17
T2
C19
-C25
C4 J2
C3 (on side)
MRF6VP2600H
225 MHz
Rev. 3
C5
* L4 is wrapped around R1.
Figure 3. MRF6VP2600HR6 Test Circuit Component Layout
MRF6VP2600HR6
4
RF Device Data
Freescale Semiconductor

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1000
Coss
100
10 Crss
TYPICAL CHARACTERISTICS
100
Ciss
Measured with ±30 mV(rms)ac @ 1 MHz
VGS = 0 Vdc
10
TJ = 200_C
TJ = 175_C
TJ = 150_C
1
0
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10 20 30 40
VDS, DRAIN−SOURCE VOLTAGE (VOLTS)
50
Figure 4. Capacitance versus Drain - Source Voltage
TC = 25_C
1
1
10
100
VDS, DRAIN−SOURCE VOLTAGE (VOLTS)
Figure 5. DC Safe Operating Area
1000
26.5 80
Gps
26 70
25.5
VDD = 50 Vdc, IDQ = 2600 mA
25 f = 225 MHz
24.5
Pulse Width = 100 μsec
Duty Cycle = 20%
24
ηD
60
50
40
30
23.5 20
23 10
22.5
10
0
100 1000
Pout, OUTPUT POWER (WATTS) PULSED
Figure 6. Pulsed Power Gain and Drain Efficiency
versus Output Power
64
P3dB = 59.7 dBm (938 W)
62
P2dB = 59.1 dBm (827 W)
60 P1dB = 53.3 dBm (670 W)
58
Ideal
Actual
56
54 VDD = 50 Vdc, IDQ = 2600 mA, f = 225 MHz
Pulse Width = 12 μsec, Duty Cycle = 1%
52
27 28 29 30 31 32 33 34 35 36 37 38
Pin, INPUT POWER (dBm)
Figure 7. Pulsed CW Output Power versus
Input Power
26
25
50 V
24
45 V
23
VDD = 50 Vdc
IDQ = 2600 mA
22 f = 225 MHz
Pulse Width = 100 μsec
Duty Cycle = 20%
21
0 100 200
300
40 V
35 V
VDD = 30 V
400 500
600
Pout, OUTPUT POWER (WATTS) PULSED
Figure 8. Pulsed Power Gain versus
Output Power
700
28 80
27
TC = −30_C
26
25_C
25
85_C
24
VDD = 50 Vdc, IDQ = 2600 mA
23 f = 225 MHz
Pulse Width = 100 μsec
22 Duty Cycle = 20%
Gps
ηD
70
60
50
40
30
20
21 10
10 100 1000
Pout, OUTPUT POWER (WATTS) PULSED
Figure 9. Pulsed Power Gain and Drain Efficiency
versus Output Power
RF Device Data
Freescale Semiconductor
MRF6VP2600HR6
5