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IRFB11N50A, SiHFB11N50A
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
500
VGS = 10 V
52
13
18
Single
0.52
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D
TO-220
G
S
D
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES
• Low Gate Charge Qg Results in Simple Drive
Requirement
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
Available
RoHS*
COMPLIANT
• Fully Characterized Capacitance and
Avalanche Voltage and current
• Lead (Pb)-free Available
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• High Speed Power Switching
APPLICABLE OFF LINE SMPS TOPOLOGIES
• Two Transistor Forward
• Half and Full Bridge
• Power Factor Correction Boost
TO-220
IRFB11N50APbF
SiHFB11N50A-E3
IRFB11N50A
SiHFB11N50A
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
VGS at 10 V
TC = 25 °C
TC = 100 °C
VGS
ID
IDM
Linear Derating Factor
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
EAS
IAR
EAR
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
TC = 25 °C
PD
dV/dt
Operating Junction and Storage Temperature Range
TJ, Tstg
Soldering Recommendations (Peak Temperature)
for 10 s
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting TJ = 25 °C, L = 4.5 mH, RG = 25 Ω, IAS = 11 A (see fig. 12).
c. ISD 11 A, dI/dt 140 A/µs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91094
S-81243-Rev. B, 21-Jul-08
LIMIT
500
± 30
11
7.0
44
1.3
275
11
17
170
6.9
- 55 to + 150
300d
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
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IRFB11N50A, SiHFB11N50A
Vishay Siliconix
THERMAL RESISTANCE
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
SYMBOL
RthJA
RthCS
RthJC
TYP.
-
0.50
-
MAX.
62
-
0.75
UNIT
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
www.DataSheetD4rUa.icno-Smource Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = 250 µA
VDS = VGS, ID = 250 µA
VGS = ± 30 V
VDS = 500 V, VGS = 0 V
VDS = 400 V, VGS = 0 V, TJ = 150 °C
VGS = 10 V
ID = 6.6 Ab
VDS = 50 V, ID = 6.6 A
500
2.0
-
-
-
-
6.1
- -V
- 4.0 V
- ± 100 nA
- 25
µA
- 250
- 0.52 Ω
- -S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Ciss
Coss
Crss
Coss
Coss eff.
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
VDS = 1.0 V, f = 1.0 MHz
VGS = 0 V VDS = 400 V, f = 1.0 MHz
VDS = 0 V to 400 V
-
-
-
-
-
-
1423
208
8.1
2000
55
97
-
-
-
-
-
-
pF
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg - - 52
ID = 11 A, VDS = 400 V
Qgs
VGS = 10 V
see fig. 6 and 13b
-
- 13 nC
Qgd - - 18
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
td(on)
tr
td(off)
tf
VDD = 250 V, ID = 11 A
RG = 9.1 Ω, RD = 22 Ω, see fig. 10b
- 14 -
- 35 -
ns
- 32 -
- 28 -
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
Pulsed Diode Forward Currenta
integral reverse
ISM p - n junction diode
D
G
S
- - 11
A
- - 44
Body Diode Voltage
VSD
TJ = 25 °C, IS = 11 A, VGS = 0 Vb
- - 1.5 V
Body Diode Reverse Recovery Time
trr
TJ = 25 °C, IF = 11 A, dI/dt = 100 A/µsb
-
510 770 ns
Body Diode Reverse Recovery Charge
Qrr
- 3.4 5.1 µC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 µs; duty cycle 2 %.
c. Coss effective is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80 % VDS.
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Document Number: 91094
S-81243-Rev. B, 21-Jul-08

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IRFB11N50A, SiHFB11N50A
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
10
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
100
10
TJ = 150° C
TJ = 25° C
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1
0.1
0.1
4.5V 20µs PULSE WIDTH
TJ= 25 °C
1 10 100
VDS , Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
100
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
10
20µs PULSE WIDTH
4.5V
TJ= 150 °C
1
1 10 100
VDS , Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics
V DS= 50V
20µs PULSE WIDTH
0.1
4.0 5.0 6.0 7.0 8.0 9.0
VGS, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3.0 ID = 11A
2.5
2.0
1.5
1.0
0.5
VGS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91094
S-81243-Rev. B, 21-Jul-08
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IRFB11N50A, SiHFB11N50A
Vishay Siliconix
2400
2000
1600
1200
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
iss
oss
800
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400
rss
0A
1 10 100 1000
VDS , Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
20 ID = 6.6A
16
12
VDS = 400V
VDS = 250V
VDS = 100V
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0 10 20 30 40 50
QG, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
100
10
TJ = 150° C
1
TJ = 25° C
0.1
0.0
VGS = 0 V
0.4 0.8 1.2
VSD ,Source-to-Drain Voltage (V)
1.6
Fig. 7 - Typical Source-Drain Diode Forward Voltage
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
100
10us
10 100us
1ms
1 10ms
TC = 25° C
TJ = 150° C
Single Pulse
0.1
10 100
1000
VDS, Drain-to-Source Voltage (V)
10000
Fig. 8 - Maximum Safe Operating Area
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Document Number: 91094
S-81243-Rev. B, 21-Jul-08

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IRFB11N50A, SiHFB11N50A
Vishay Siliconix
12
10
8
6
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2
0
25
50 75 100 125
TC , Case Temperature ( °C)
150
Fig. 9 - Maximum Drain Current vs. Case Temperature
1
VDS
VGS
RG
RD
D.U.T.
+
- VDD
10V
Pulse Width 1 µs
Duty Factor 0.1 %
Fig. 10a - Switching Time Test Circuit
VDS
90 %
10 %
VGS
td(on) tr
t d(off) tf
Fig. 10b - Switching Time Waveforms
D = 0.50
0.20
0.1 0.10
0.05 PDM
0.02
0.01
0.01
0.00001
t1
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJC + TC
t2
0.0001
0.001
0.01
t1 , Rectangular Pulse Duration (s)
0.1
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
1
15 V
V DS
tp
VDS
L
Driver
RG
20 V
tp
D.U.T.
IAS
0.01 Ω
+
- VDAD
A
Fig. 12a - Unclamped Inductive Test Circuit
Document Number: 91094
S-81243-Rev. B, 21-Jul-08
IAS
Fig. 12b - Unclamped Inductive Waveforms
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