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IRFBC20S, SiHFBC20S, IRFBC20L, SiHFBC20L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
www.DataSheet4UC.coonmfiguration
600
VGS = 10 V
18
3.0
8.9
Single
I2PAK (TO-262) D2PAK (TO-263)
4.4
D
G
D
S
G
S
N-Channel MOSFET
FEATURES
• Surface Mount (IRFBC20S/SiHFBC20S)
• Low-Profile Through-Hole (IRFBC20L/SiHFBC20L)
• Available in Tape and Reel (IRFBC20S/SiHFBC20S)
• Dynamic dV/dt Rating
• 150 °C Operating Temperature
Available
RoHS*
COMPLIANT
• Fast Switching
• Fully Avalanche Rated
• Lead (Pb)-free Available
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The D2PAK is a surface mount power package capable of
the accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D2PAK is suitable for high current applications because of its
low internal connection resistance and can dissipate up to
2.0 W in a typical surface mount application. The
through-hole version (IRFBC20L/SiHFBC20L) is a available
for low-profile applications.
ORDERING INFORMATION
Package
D2PAK (TO-263)
Lead (Pb)-free
IRFBC20SPbF
SiHFBC20S-E3
SnPb
IRFBC20S
SiHFBC20S
Note
a. See device orientation.
D2PAK (TO-263)
IRFBC20STRLPbFa
SiHFBC20STL-E3a
IRFBC20STRLa
SiHFBC20STLa
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Currente
Pulsed Drain Currenta, e
Linear Derating Factor
Single Pulse Avalanche Energyb, e
Avalanche Currenta
Repetiitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc, e
VGS at 10 V
TC = 25 °C
TC = 100 °C
TA = 25 °C
TC = 25 °C
VDS
VGS
ID
IDM
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
TJ, Tstg
Soldering Recommendations (Peak Temperature)
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 31 mH, RG = 25 Ω, IAS = 2.2 A (see fig. 12).
c. ISD 2.2 A, dI/dt 40 A/µs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
e. Uses IRFBC20/SiHFBC20 data and test conditions.
* Pb containing terminations are not RoHS compliant, exemptions may apply
I2PAK (TO-262)
IRFBC20LPbF
SiHFBC20L-E3
IRFBC20L
SiHFBC20L
LIMIT
600
± 20
2.2
1.4
8.0
0.40
84
2.2
5.0
3.1
50
3.0
- 55 to + 150
300d
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
Document Number: 91107
S-Pending-Rev. A, 03-Jun-08
WORK-IN-PROGRESS
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IRFBC20S, SiHFBC20S, IRFBC20L, SiHFBC20L
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient (PCB
Mounted, steady-state)a
RthJA
Maximum Junction-to-Case (Drain)
RthJC
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
TYP.
-
-
MAX.
40
2.5
UNIT
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
www.DataSheetS4tUa.tcicom
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
ΔVDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = 250 µA
Reference to 25 °C, ID = 1 mAc
VDS = VGS, ID = 250 µA
VGS = ± 20 V
VDS = 600 V, VGS = 0 V
VDS = 480 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 1.3 Ab
VDS = 50 V, ID = 1.3 Ac
600 -
-V
- 0.88 - V/°C
2.0 - 4.0 V
- - ± 100 nA
- - 100
µA
- - 500
- - 4.4 Ω
1.4 -
-S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Source Inductance
Drain-Source Body Diode Characteristics
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LS
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5c
VGS = 10 V
ID = 2.0 A, VDS = 360 V,
see fig. 6 and 13b, c
VDD = 300 V, ID = 2.0 A,
RG = 18 Ω, RD = 150 Ω, see fig. 10b, c
Between lead, and center of die contact
-
-
-
-
-
-
-
-
-
-
-
350 -
48 - pF
8.6 -
- 18
- 3.0 nC
- 8.9
10 -
23 -
ns
30 -
25 -
7.5 - nH
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
Pulsed Diode Forward Currenta
integral reverse
ISM p - n junction diode
D
G
S
- - 2.2
A
- - 8.0
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
VSD
TJ = 25 °C, IS = 2.2 A, VGS = 0 Vb
- - 1.6 V
trr
TJ = 25 °C, IF = 2.0 A, dI/dt = 100 A/µsb, c
-
290 580 ns
Qrr
-
0.67 1.3
µC
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 µs; duty cycle 2 %.
c. Uses IRFBC20/SiHFBC20 data and test conditions.
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Document Number: 91107
S-Pending-Rev. A, 03-Jun-08

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IRFBC20S, SiHFBC20S, IRFBC20L, SiHFBC20L
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
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Fig. 1 - Typical Output Characteristics, TC = 25 °C
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics, TC = 150 °C
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91107
S-Pending-Rev. A, 03-Jun-08
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IRFBC20S, SiHFBC20S, IRFBC20L, SiHFBC20L
Vishay Siliconix
www.DataSheet4U.com
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 8 - Maximum Safe Operating Area
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Document Number: 91107
S-Pending-Rev. A, 03-Jun-08

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IRFBC20S, SiHFBC20S, IRFBC20L, SiHFBC20L
Vishay Siliconix
www.DataSheet4U.com
VDS
VGS
RG
RD
D.U.T.
10 V
Pulse width 1 µs
Duty factor 0.1 %
+- VDD
Fig. 10a - Switching Time Test Circuit
VDS
90 %
Fig. 9 - Maximum Drain Current vs. Case Temperature
10 %
VGS
td(on) tr
td(off) tf
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
VDS
Vary tp to obtain
required IAS
RG
10 V
tp
L
D.U.T.
IAS
0.01 Ω
+
- V DD
Fig. 12a - Unclamped Inductive Test Circuit
Document Number: 91107
S-Pending-Rev. A, 03-Jun-08
VDS
VDS
tp
VDD
IAS
Fig. 12b - Unclamped Inductive Waveforms
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