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Power MOSFET
IRFIZ14G, SiHFIZ14G
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
60
VGS = 10 V
11
3.1
5.8
Single
0.20
TO-220 FULLPAK
D
GDS
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES
• Isolated Package
• High Voltage Isolation = 2.5 kVRMS (t = 60 s;
f = 60 Hz)
• Sink to Lead Creepage Distance = 4.8 mm
Available
RoHS*
COMPLIANT
• 175 °C Operating Temperature
• Dynamic dv/dt Rating
• Low Thermal Resistance
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provides the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost
effectiveness.
The TO-220 FULLPAK eliminates the need for additional
insulating hardware in commercial-industrial applications.
The molding compound used provides a high isolation
capability and a low thermal resistance between the tab and
external heatsink. This isolation is equivalent to using a 100
micron mica barrier with standard TO-220 product. The
FULLPAK is mounted to a heatsink using a single clip or by
a single screw fixing.
TO-220 FULLPAK
IRFIZ14GPbF
SiHFIZ14G-E3
IRFIZ14G
SiHFIZ14G
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
Single Pulse Avalanche Energyb
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
VGS at 10 V
TC = 25 °C
TC = 100 °C
TC = 25 °C
VDS
VGS
ID
IDM
EAS
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, starting TJ = 25 °C, L = 1.47 mH, Rg = 25 , IAS = 8.0 A (see fig. 12).
c. ISD 10 A, dI/dt 90 A/µs, VDD VDS, TJ 175 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 90224
S10-2325-Rev. C, 11-Oct-10
LIMIT
60
± 20
8.0
5.7
32
0.18
47
27
4.5
- 55 to + 175
300d
10
1.1
UNIT
V
A
W/°C
mJ
W
V/ns
°C
lbf · in
N·m
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IRFIZ14G, SiHFIZ14G
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
RthJA
RthJC
TYP.
-
-
MAX.
65
5.5
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain to Sink Capacitance
VDS
VDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
Ciss
Coss
Crss
C
VGS = 0 V, ID = 250 µA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 µA
VGS = 20
VDS = 60 V, VGS = 0 V
VDS = 48 V, VGS = 0 V, TJ = 150 °C
VGS = 10 V
ID = 4.8 Ab
VDS = 25 V, ID = 4.8 Ab
VGS = 0 V
VDS = 25 V
f = 1.0 MHz, see fig. 5
f = 1.0 MHz
60 -
-V
- 0.63 - V/°C
2.0 - 4.0 V
- - 100 nA
- - 25
µA
- - 250
-
-
0.20
2.2 -
-S
- 300 -
- 160 -
pF
- 29 -
- 12 -
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 10 V
ID = 10 A, VDS = 48 V,
see fig. 6 and 13b
VDD = 30 V, ID = 10 A
Rg = 24 , RD = 2.7, see fig. 10b
-
-
-
-
-
-
-
- 11
- 3.1 nC
- 5.8
10 -
50 -
ns
13 -
19 -
Internal Drain Inductance
Internal Source Inductance
LD
Between lead,
6 mm (0.25") from
D
package and center of
G
LS die contact
S
- 4.5 -
nH
- 7.5 -
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Currenta
IS
MOSFET symbol
showing the
integral reverse
ISM p - n junction diode
D
G
S
- - 8.0
A
- - 32
Body Diode Voltage
VSD TJ = 25 °C, IS = 8.0 A, VGS = 0 Vb - - 1.6 V
Body Diode Reverse Recovery Time
trr
TJ = 25 °C, IF = 10 A, di/dt = 100 A/µsb
-
70 140 ns
Body Diode Reverse Recovery Charge
Qrr
- 0.20 0.40 µC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 µs; duty cycle 2 %.
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Document Number: 90224
S10-2325-Rev. C, 11-Oct-10

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
IRFIZ14G, SiHFIZ14G
Vishay Siliconix
Fig. 1 - Typical Output Characteristics, TC = 25 °C
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics, TC = 175 °C
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 90224
S10-2325-Rev. C, 11-Oct-10
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IRFIZ14G, SiHFIZ14G
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 8 - Maximum Safe Operating Area
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Document Number: 90224
S10-2325-Rev. C, 11-Oct-10

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Fig. 9 - Maximum Drain Current vs. Case Temperature
IRFIZ14G, SiHFIZ14G
Vishay Siliconix
VDS
VGS
RG
RD
D.U.T.
+- VDD
10 V
Pulse width 1 µs
Duty factor 0.1 %
Fig. 10a - Switching Time Test Circuit
VDS
90 %
10 %
VGS
td(on) tr
td(off) tf
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
VDS
Vary tp to obtain
required IAS
RG
10 V
tp
L
D.U.T.
IAS
0.01 Ω
+
- VDD
VDS
IAS
VDS
tp
VDD
Fig. 12a - Unclamped Inductive Test Circuit
Fig. 12b - Unclamped Inductive Waveforms
Document Number: 90224
S10-2325-Rev. C, 11-Oct-10
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