B1020.pdf 데이터시트 (총 3 페이지) - 파일 다운로드 B1020 데이타시트 다운로드

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JMnic
Silicon PNP Power Transistors
Product Specification
2SB1020
DESCRIPTION
With TO-220Fa package
High DC current gain
Low saturation voltage
Complement to type 2SD1415
www.DataSheet4AUP.cPomLICATIONS
High power switching applications
Hammer drive,pulse motor drive applications
PINNING
PIN
DESCRIPTION
1 Base
2 Collector
3 Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector -emitter voltage
VEBO
Emitter-base voltage
IC Collector current
IB Base current
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
-100
-100
-5
-7
-0.2
30
150
-55~150
UNIT
V
V
V
A
A
W

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JMnic
Silicon PNP Power Transistors
Product Specification
2SB1020
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO Collector-emitter breakdown voltage
www.DataSheet4UV.cCoEmsat-1 Collector-emitter saturation voltage
VCEsat-2 Collector-emitter saturation voltage
VBEsat Base-emitter saturation voltage
ICBO Collector cut-off current
IEBO Emitter cut-off current
hFE-1
DC current gain
hFE-2
DC current gain
Switching times
ton Turn-on time
tstg Storage time
tf Fall time
CONDITIONS
IC=-50mA; IB=0
IC=-3A ;IB=-6mA
IC=-7A ;IB=-14mA
IC=-3A ;IB=-6mA
VCB=-100V; IE=0
VEB=-5V; IC=0
IC=-3A ; VCE=-3V
IC=-7A ; VCE=-3V
IB1=-IB2=-6mA
VCC=-45V ,RL=15
MIN TYP. MAX UNIT
-100
V
-0.95 -1.5
V
-1.3 -2.0
V
-1.55 -2.5
V
-100 A
-4.0 mA
2000
15000
1000
0.8 s
2.0 s
2.5 s
2

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JMnic
Silicon PNP Power Transistors
PACKAGE OUTLINE
www.DataSheet4U.com
Product Specification
2SB1020
Fig.2 Outline dimensions (unindicated tolerance: 0.15 mm)
3