STGF19NC60KD.pdf 데이터시트 (총 26 페이지) - 파일 다운로드 STGF19NC60KD 데이타시트 다운로드

No Preview Available !

STGB19NC60KDT4,
STGF19NC60KD, STGP19NC60KD
20 A, 600 V short-circuit rugged IGBT
Datasheet - production data
TAB
3
1
D2 PAK
TAB
3
2
1
TO-220FP
TO-220
3
12
Figure 1: Internal schematic diagram
Features
Low on voltage drop (VCE(sat))
Low CRES / CIES ratio (no cross-conduction
susceptibility)
Short-circuit withstand time 10 μs
IGBT co-packaged with ultrafast free-
wheeling diode
Applications
High frequency inverters
Motor drives
Description
These devices are very fast IGBTs developed
using advanced PowerMESH™ technology. This
process guarantees an excellent trade-off
between switching performance and low on-state
behavior.
Order code
STGB19NC60KDT4
STGF19NC60KD
STGP19NC60KD
Table 1: Device summary
Marking
Package
GB19NC60KD
D²PAK
GF19NC60KD
TO-220FP
GP19NC60KD
TO-220
Packing
Tape and reel
Tube
July 2017
DocID14701 Rev 4
This is information on a product in full production.
1/26
www.st.com

No Preview Available !

Contents
Contents
STGB19NC60KDT4, STGF19NC60KD,
STGP19NC60KD
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
2.1 Electrical characteristics (curves)...................................................... 7
3 Test circuits ................................................................................... 10
4 Package information ..................................................................... 11
4.1 D2PAK (TO-263) type A package information ................................. 11
4.2 D²PAK (TO-263) type B package information ................................. 14
4.3 D²PAK type A packing information .................................................. 17
4.4 D²PAK type B packing information .................................................. 19
4.5 TO-220FP package information ...................................................... 21
4.6 TO-220 type A package information................................................ 23
5 Revision history ............................................................................ 25
2/26 DocID14701 Rev 4

No Preview Available !

STGB19NC60KDT4, STGF19NC60KD,
STGP19NC60KD
Electrical ratings
1 Electrical ratings
Symbol
VCES
IC(1)
ICL(2)
ICP(3)
VGE
IF
IFSM
PTOT
VISO
tscw
Tstg
TJ
Table 2: Absolute maximum ratings
Parameter
Value
D²PAK, TO-220 TO-220FP
Collector-emitter voltage (VGE = 0 V)
Continuous collector current at TC = 25 °C
600
35
16
Continuous collector current at TC = 100 °C
20 10
Turn-off latching current
75
Pulsed collector current
75
Gate-emitter voltage
±20
Diode RMS forward current at TC= 25 °C
Surge non repetitive forward current tp= 10 ms
sinusoidal
20
50
Total dissipation at TC = 25 °C
125 32
Insulation withstand voltage (RMS) from all three
leads to external heat-sink (t=1 s; TC= 25 °C)
Short-circuit withstand time VCE = 300 V,
Tj = 125 °C, RG = 10 Ω, VGE = 12 V
Storage temperature range
Operating junction temperature range
2500
10
- 55 to 150
Unit
V
A
A
A
A
V
A
A
W
V
μs
°C
Notes:
(1)Calculated according to the iterative formula:
(2)Vclamp = 80 % VCES, VGE = 15 V, RG = 10 Ω, TJ = 150 °C.
(3)Pulse width limited by maximum junction temperature.
Symbol
Rthj-case
Rthj-case
Rthj-amb
Table 3: Thermal data
Parameter
Value
D²PAK, TO-220 TO-220FP
Thermal resistance junction-case IGBT
1 3.9
Thermal resistance junction-case diode
3 5.6
Thermal resistance junction-ambient
62.5
Unit
°C/W
DocID14701 Rev 4
3/26

No Preview Available !

Electrical characteristics
STGB19NC60KDT4, STGF19NC60KD,
STGP19NC60KD
2 Electrical characteristics
TC = 25 °C unless otherwise specified
Symbol
Table 4: Static characteristics
Parameter
Test conditions
V(BR)CES
Collector-emitter breakdown
voltage
IC = 1 mA, VGE = 0 V
VCE(sat)
Collector-emitter saturation
voltage
VGE(th) Gate threshold voltage
ICES Collector cut-off current
IGES Gate-emitter leakage current
VGE =15 V, IC = 12 A
VGE = 15 V, IC = 12 A,
TC= 125 °C
VCE = VGE, IC = 250 µA
VCE = 600 V, VGE = 0 V
VCE=600 V, VGE = 0 V,
TC= 125 °C (1)
VCE = 0 V, VGE = ±20 V
Min. Typ. Max. Unit
600 V
2.0 2.75
1.65
V
4.5 6.5 V
150 µA
1 mA
±100 nA
Notes:
(1)Defined by design, not subject to production test.
Table 5: Dynamic characteristics
Symbol
Parameter
Test conditions
Cies Input capacitance
Coes Output capacitance
Cres
Reverse transfer
capacitance
VCE= 25 V, f = 1 MHz,
VGE = 0 V
Qg Total gate charge
Qge Gate-emitter charge
Qgc Gate-collector charge
VCE = 480 V, IC = 12 A,
VGE = 0 to 15 V
(see Figure 20: " Gate
charge test circuit")
Min. Typ. Max. Unit
- 1170 -
- 127 - pF
- 28 -
- 55 -
- 11 - nC
- 26 -
4/26 DocID14701 Rev 4

No Preview Available !

STGB19NC60KDT4, STGF19NC60KD,
STGP19NC60KD
Electrical characteristics
Table 6: Switching on/off (inductive load)
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
td(on) Turn-on delay time
tr Current rise time
(di/dt)on Turn-on current slope
VCC = 480 V, IC = 12 A,
RG = 10 Ω,
VGE = 15 V
(see Figure 19: " Test circuit for
inductive load switching" and
Figure 21: " Switching
waveform")
- 30 - ns
- 8 - ns
- 1450 - A/µs
td(on) Turn-on delay time
tr Current rise time
(di/dt)on Turn-on current slope
VCC = 480 V, IC = 12 A,
RG = 10 Ω,
VGE = 15 V, TC=125 °C
(see Figure 19: " Test circuit for
inductive load switching" and
Figure 21: " Switching
waveform")
- 30 - ns
- 8 - ns
- 1380 - A/µs
tr(Voff)
td(off)
Off voltage rise time
Turn-off delay time
tf Current fall time
VCC = 480 V, IC = 12 A,
RG = 10 Ω, VGE = 15 V
(see Figure 19: " Test circuit for
inductive load switching" and
Figure 21: " Switching
waveform")
- 35 -
- 105 -
- 85 -
ns
ns
ns
tr(Voff)
td(off)
Off voltage rise time
Turn-off delay time
tf Current fall time
VCC = 480 V, IC = 12 A,
RG = 10 Ω, VGE = 15 V,
TC=125 °C (see Figure 19: "
Test circuit for inductive load
switching" and Figure 21: "
Switching waveform")
- 65 -
- 145 -
- 125 -
ns
ns
ns
Symbol
Table 7: Switching energy (inductive load)
Parameter
Test conditions
Min. Typ. Max. Unit
Eon(1)
Eoff(2)
Ets
Eon(1)
Eoff(2)
Ets
Turn-on switching
energy
Turn-off switching
energy
Total switching energy
Turn-on switching
energy
Turn-off switching
energy
Total switching energy
VCC = 480 V, IC = 12 A,
RG = 10 Ω , VGE = 15 V
(see Figure 19: " Test circuit for
inductive load switching")
VCC = 480 V, IC = 12 A,
RG = 10 Ω , VGE = 15 V,
TC=125 °C
(see Figure 19: " Test circuit for
inductive load switching")
- 165 -
- 255 -
- 420 -
- 250 -
- 445 -
- 695 -
μJ
μJ
μJ
μJ
μJ
μJ
Notes:
(1)Including the reverse recovery of the diode.
(2)Including the tail of the collector current.
DocID14701 Rev 4
5/26