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STGB19NC60KD, STGF19NC60KD,
STGP19NC60KD
20 A, 600 V short-circuit rugged IGBT
Features
Low on-voltage drop (VCE(sat))
Low Cres / Cies ratio (no cross conduction
susceptibility)
Short circuit withstand time 10 µs
IGBT co-packaged with Ultrafast free-wheeling
diode
Applications
High frequency inverters
Motor drivers
Description
This IGBT utilizes the advanced PowerMESH™
process resulting in an excellent trade-off
between switching performance and low on-state
behavior.
Datasheet production data
3
2
1
TO-220
3
1
D²PAK
3
2
1
TO-220FP
Figure 1. Internal schematic diagram
Table 1. Device summary
Order codes
Marking
STGB19NC60KDT4
GB19NC60KD
STGF19NC60KD
STGP19NC60KD
GF19NC60KD
GP19NC60KD
Packages
D2PAK
TO-220FP
TO-220
July 2012
This is information on a product in full production.
Doc ID 14701 Rev 3
Packaging
Tape and reel
Tube
Tube
1/19
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Contents
Contents
STGB19NC60KD, STGF19NC60KD, STGP19NC60KD
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves)
............................ 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
2/19 Doc ID 14701 Rev 3

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STGB19NC60KD, STGF19NC60KD, STGP19NC60KD
1 Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
VCES
IC(1)
IC(1)
ICL (2)
ICP (3)
VGE
IF
IFSM
Collector-emitter voltage (VGE = 0)
Collector current (continuous) at TC = 25 °C
Collector current (continuous) at TC = 100 °C
Turn-off latching current
Pulsed collector current
Gate-emitter voltage
Diode RMS forward current at TC = 25 °C
Surge non repetitive forward current tp = 10 ms
sinusoidal
PTOT
tscw
Tj
Total dissipation at TC = 25 °C
Short circuit withstand time, VCE = 0.5 V(BR)CES
Tj = 125 °C, RG = 10 Ω, VGE = 12 V
Operating junction temperature
1. Calculated according to the iterative formula:
Value
D²PAK
TO-220
TO-220FP
600
35 16
20 10
75
75
±20
20
50
125 32
10
– 55 to 150
Ic(Tc)
=
-------------------------T----J---(--M----A---X----)---–----T----c-------------------------
Rthj c × VCE(sat)(MAX) ⋅ (Tc,Ic)
Unit
V
A
A
A
A
V
A
A
W
µs
°C
2. Vclamp = 80%,(VCES), Tj =150°C, RG = 10 Ω, VGE = 15 V
3. Pulse width limited by max. junction temperature allowed
Table 3. Thermal resistance
Symbol
Parameter
Thermal resistance junction-case IGBT max.
Rthj-case
Thermal resistance junction-case diode max.
Rthj-amb Thermal resistance junction-ambient max.
Value
D2PAK
TO-220
TO-220FP
0.95
3
62.5
3.9
5.6
Unit
°C/W
°C/W
°C/W
Doc ID 14701 Rev 3
3/19

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Electrical characteristics
STGB19NC60KD, STGF19NC60KD, STGP19NC60KD
2 Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 4.
Symbol
Static
Parameter
Test conditions
V(BR)CES
Collector-emitter breakdown
voltage (VGE= 0)
IC = 1 mA
VCE(sat)
Collector-emitter saturation
voltage
VGE = 15 V, IC = 12 A
VGE = 15 V, IC = 12 A,
Tc = 125 °C
ICES
Collector cut-off current
(VGE = 0)
VCE = 600 V
VCE = 600 V, TC = 125 °C
VGE(th) Gate threshold voltage
VCE = VGE, IC = 250 µA
IGES
gfs (1)
Gate-emitter leakage
current (VCE = 0)
Forward transconductance
VGE = ±20 V
VCE = 15 V , IC = 12 A
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Min. Typ. Max. Unit
600 V
2.0 2.75 V
1.65 V
150 µA
1 mA
4.5 6.5 V
±100 nA
15 S
Table 5.
Symbol
Dynamic
Parameter
Cies
Coes
Cres
Qg
Qge
Qgc
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-emitter charge
Gate-collector charge
Test conditions
VCE = 25 V, f = 1 MHz,
VGE = 0
VCE = 480 V, IC = 12 A,
VGE = 15 V
(see Figure 21)
Min. Typ. Max. Unit
1170
127
28
55
11
26
pF
pF
pF
nC
nC
nC
4/19 Doc ID 14701 Rev 3

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STGB19NC60KD, STGF19NC60KD, STGP19NC60KD
Electrical characteristics
Table 6. Switching on/off (inductive load)
Symbol
Parameter
Test conditions
td(on)
tr
(di/dt)on
Turn-on delay time
Current rise time
Turn-on current slope
td(on)
tr
(di/dt)on
Turn-on delay time
Current rise time
Turn-on current slope
tr(Voff)
td(off)
tf
Off voltage rise time
Turn-off delay time
Current fall time
tr(Voff)
td(off)
tf
Off voltage rise time
Turn-off delay time
Current fall time
VCC = 480 V, IC = 12 A
RG = 10 Ω, VGE = 15 V,
(see Figure 20)
VCC = 480 V, IC = 12 A
RG = 10 Ω, VGE = 15 V,
Tc = 125 °C
(see Figure 20)
VCC = 480 V, IC = 12 A
RG = 10 Ω, VGE = 15 V,
(see Figure 20)
Vcc = 480 V, IC = 12 A,
RG = 10 Ω, VGE = 15 V
Tc = 125 °C
(see Figure 20)
Min. Typ. Max. Unit
30
8
1450
ns
ns
A/µs
30
8
1380
ns
ns
A/µs
35 ns
105 ns
85 ns
65 ns
145 ns
125 ns
Table 7. Switching energy (inductive load)
Symbol
Parameter
Test conditions
Eon
Eoff (1)
Ets
Turn-on switching losses
Turn-off switching losses
Total switching losses
Eon
Eoff (1)
Ets
Turn-on switching losses
Turn-off switching losses
Total switching losses
VCC = 480 V, IC = 12 A
RG = 10 Ω, VGE = 15 V,
(see Figure 20)
VCC = 480 V, IC = 12 A
RG = 10 Ω, VGE = 15 V,
TC = 125 °C
(see Figure 20)
1. Turn-off losses include also the tail of the collector current.
Min Typ. Max Unit
165 µJ
255 µJ
420 µJ
250 µJ
445 µJ
695 µJ
Table 8. Collector-emitter diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
VF Forward on-voltage
IF = 12 A
IF = 12 A, Tc = 125 °C
trr Reverse recovery time
IF = 12 A,VR = 40 V,
Qrr Reverse recovery charge di/dt = 100 A/μs
Irrm Reverse recovery current (see Figure 23)
trr Reverse recovery time
IF = 12 A,VR = 40 V,
Qrr Reverse recovery charge Tc =125 °C, di/dt = 100 A/μs
Irrm Reverse recovery current (see Figure 23)
1.9
1.6
31
30
2
50
70
4
V
V
ns
nC
A
ns
nC
A
Doc ID 14701 Rev 3
5/19