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150EBU04
Vishay High Power Products
Ultrafast Soft Recovery Diode,
150 A FRED PtTM
Cathode
Anode
FEATURES
• Ultrafast recovery
• 175 °C operating junction temperature
• Screw mounting only
• Lead (Pb)-free plating
• Designed and qualified for industrial level
RoHS
COMPLIANT
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PowerTabTM
BENEFITS
• Reduced RFI and EMI
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
PRODUCT SUMMARY
trr
IF(AV)
VR
60 ns
150 A
400 V
DESCRIPTION/APPLICATIONS
These diodes are optimized to reduce losses and EMI/RFI in
high frequency power conditioning systems.
The softness of the recovery eliminates the need for a
snubber in most applications. These devices are ideally
suited for HF welding, power converters and other
applications where switching losses are not significant
portion of the total losses.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Cathode to anode voltage
VR
Continuous forward current
IF(AV)
Single pulse forward current
Maximum repetitive forward current
Operating junction and storage
temperatures
IFSM
IFRM
TJ, TStg
TEST CONDITIONS
TC = 104 °C
TC = 25 °C
Square wave, 20 kHz
MAX.
400
150
1500
300
- 55 to 175
UNITS
V
A
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Breakdown voltage,
blocking voltage
VBR,
VR
IR = 200 µA
IF = 150 A
Forward voltage
VF IF = 150 A, TJ = 175 °C
IF = 150 A, TJ = 125 °C
Reverse leakage current
VR = VR rated
IR
TJ = 150 °C, VR = VR rated
Junction capacitance
CT VR = 400 V
Series inductance
LS Measured lead to lead 5 mm from package body
MIN.
400
-
-
-
-
-
-
-
TYP.
-
1.07
0.9
0.96
-
-
100
3.5
MAX. UNITS
-
1.3
1.1
1.17
50
4
-
-
V
µA
mA
pF
nH
Document Number: 93003
Revision: 30-Oct-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
1

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150EBU04
Vishay High Power Products Ultrafast Soft Recovery Diode,
150 A FRED PtTM
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
Reverse recovery time
IF = 1.0 A, dIF/dt = 200 A/µs, VR = 30 V
trr TJ = 25 °C
--
- 93
Peak recovery current
Reverse recovery charge
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IRRM
Qrr
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
IF = 150 A
VR = 200 V
dIF/dt = 200 A/µs
- 172
- 11
- 20
- 490
- 1740
MAX.
60
-
-
-
-
-
-
UNITS
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Thermal resistance,
junction to case
Thermal resistance,
junction to heatsink
RthJC
RthCS
Mounting surface, flat, smooth and greased
Weight
Mounting torque
Marking device
Case style PowerTabTM
MIN.
-
-
-
-
1.2
(10)
TYP.
-
MAX.
0.35
0.2 -
- 5.02
0.18 -
2.4
-
(20)
150EBU04
UNITS
K/W
g
oz.
N·m
(lbf · in)
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For technical questions, contact: diodes-tech@vishay.com
Document Number: 93003
Revision: 30-Oct-08

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1000
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10
150EBU04
Ultrafast Soft Recovery Diode, Vishay High Power Products
150 A FRED PtTM
T J = 175˚C
T J = 125˚C
T J = 25˚C
1000
100
10
T J = 175˚C
125˚C
1
25˚C
0.1
0.01
0.001
0
100 200 300
Reverse Voltage - VR (V)
400
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
10000
T J= 25˚C
1000
100
1
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
Forward Voltage Drop - VFM (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
1
10
10
100 1000
Reverse Voltage - VR (V)
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
D = 0.50
D = 0.20
0.1
D = 0.10
D = 0.05
D = 0.02
D = 0.01
Single Pulse
(Thermal Resistance)
Notes:
PDM
t1
t2
1. Duty factor D = t1/ t 2
0.01
0.00001
2. Peak Tj = Pdm x ZthJC + Tc
0.0001
0.001
0.01
0.1
t1, Rectangular Pulse Duration (Seconds)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
1
Document Number: 93003
Revision: 30-Oct-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
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150EBU04
Vishay High Power Products Ultrafast Soft Recovery Diode,
150 A FRED PtTM
180
160
140
DC
120
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100
Square wave (D = 0.50)
80 Rated Vr applied
60
see note (1)
40
0 50 100 150 200 250
Average Forward Current - IF(AV)(A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
250
Vr = 200V
Tj = 125˚C
Tj = 25˚C
200
IF = 150A
IF = 75A
150
100
50
100 1000
di F /dt (A/µs )
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt
300
250
RMS Limit
200
150
100
50
0
0
D = 0.01
D = 0.02
D = 0.05
D = 0.10
DD=C0.20
D = 0.50
DC
50 100 150 200 250
Average Forward Current - IF(AV)(A)
Fig. 6 - Forward Power Loss Characteristics
5000
4500
4000
Vr = 200V
Tj = 125˚C
Tj = 25˚C
3500
3000
IF = 150A
IF = 75A
2500
2000
1500
1000
500
0
100 1000
di F/dt (A/µs )
Fig. 8 - Typical Stored Charge vs. dIF/dt
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR
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For technical questions, contact: diodes-tech@vishay.com
Document Number: 93003
Revision: 30-Oct-08

No Preview Available !

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150EBU04
Ultrafast Soft Recovery Diode, Vishay High Power Products
150 A FRED PtTM
VR = 200 V
L = 70 µH
0.01 Ω
D.U.T.
dIF/dt
adjust
G
D
IRFP250
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
IF
0
(3)
trr
ta
tb
(2) IRRM
(4)
Qrr
0.5 IRRM
dI(rec)M/dt (5)
0.75 IRRM
(1) dIF/dt
(1) dIF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(4) Qrr - area under curve defined by trr
and IRRM
Qrr =
trr x IRRM
2
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and Definitions
Document Number: 93003
Revision: 30-Oct-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
5