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STB11NM80 - STF11NM80
STP11NM80 - STW11NM80
N-channel 800 V - 0.35 - 11 A - TO-220/FP- D2PAK - TO-247
MDmesh™ Power MOSFET
Features
www.DataSheet4U.com Type
VDSS
STB11NM80 800 V
STF11NM80 800 V
STP11NM80 800 V
STW11NM80 800 V
RDS(on) RDS(on)*Qg ID
< 0.40 14*nC 11 A
< 0.40 14*nC 11 A
< 0.40 14*nC 11 A
< 0.40 14*nC 11 A
Low input capacitance and gate charge
Low gate input resistance
Best RDS(on) *Qg in the industry
Application
Switching applications
Description
The MDmesh™ associates the multiple drain
process with the Company’s PowerMesh™
horizontal layout assuring an outstanding low on-
resistance. The adoption of the Company’s
proprietary strip technique yields overall dynamic
performance that is significantly better than that of
similar competition’s products.
TO-247
3
1
D²PAK
3
2
1
TO-220
3
2
1
TO-220FP
Figure 1. Internal schematic diagram
Table 1. Device summary
Order codes
STB11NM80
STF11NM80
STP11NM80
STW11NM80
Marking
B11NM80
F11NM80
P11NM80
W11NM80
Package
D²PAK
TO-220FP
TO-220
TO-247
December 2007
Rev 9
Packaging
Tape & reel
Tube
Tube
Tube
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Contents
Contents
STB11NM80 - STF11NM80 - STP11NM80 - STW11NM80
1
2
www.DataSheet4U3.com
4
5
6
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
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STB11NM80 - STF11NM80 - STP11NM80 - STW11NM80
1 Electrical ratings
Electrical ratings
www.DataSheet4U.com
Table 2. Absolute maximum ratings
Symbol
Parameter
VDS Drain-source voltage (VGS = 0)
VGS Gate-source voltage
ID Drain current (continuous) at TC = 25°C
ID
IDM(2)
Drain current (continuous) at TC=100°C
Drain current (pulsed)
PTOT
Total dissipation at TC = 25°C
Derating factor
VISO Insulation withstand voltage (DC)
TJ Operating junction temperature
Tstg Storage temperature
1. Limited only by the maximum temperature allowed
2. Pulse width limited by safe operating area
Table 3. Thermal data
Symbol
Parameter
Rthj-case
Rthj-a
Tl
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Maximum lead temperature for soldering
purpose
Value
TO-220/D²PAK/
Unit
TO-220FP
TO-247
800
±30
11
8
44
150
1.2
--
11 (1)
8 (1)
44 (1)
35
0.28
2500
V
V
A
A
A
W
W/°C
V
-65 to 150
°C
Value
TO-220/D²PAK/
Unit
TO-220FP
TO-247
0.83 3.6 °C/W
62.5 °C/W
300 °C
Table 4. Avalanche characteristics
Symbol
Parameter
Avalanche current, repetitive or not-repetitive
IAS (pulse width limited by Tj Max)
Single pulse avalanche energy
EAS (starting Tj=25°C, Id=Iar, Vdd=50 V)
Value
2.5
400
Unit
A
mJ
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