F11NM80.pdf 데이터시트 (총 17 페이지) - 파일 다운로드 F11NM80 데이타시트 다운로드

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STB11NM80 - STF11NM80
STP11NM80 - STW11NM80
N-channel 800 V - 0.35 Ω - 11 A - TO-220/FP- D2PAK - TO-247
MDmesh™ Power MOSFET
Features
www.DataSheet4U.com Type
VDSS
STB11NM80 800 V
STF11NM80 800 V
STP11NM80 800 V
STW11NM80 800 V
RDS(on) RDS(on)*Qg ID
< 0.40 Ω 14Ω*nC 11 A
< 0.40 Ω 14Ω*nC 11 A
< 0.40 Ω 14Ω*nC 11 A
< 0.40 Ω 14Ω*nC 11 A
■ Low input capacitance and gate charge
■ Low gate input resistance
■ Best RDS(on) *Qg in the industry
Application
■ Switching applications
Description
The MDmesh™ associates the multiple drain
process with the Company’s PowerMesh™
horizontal layout assuring an outstanding low on-
resistance. The adoption of the Company’s
proprietary strip technique yields overall dynamic
performance that is significantly better than that of
similar competition’s products.
TO-247
3
1
D²PAK
3
2
1
TO-220
3
2
1
TO-220FP
Figure 1. Internal schematic diagram
Table 1. Device summary
Order codes
STB11NM80
STF11NM80
STP11NM80
STW11NM80
Marking
B11NM80
F11NM80
P11NM80
W11NM80
Package
D²PAK
TO-220FP
TO-220
TO-247
December 2007
Rev 9
Packaging
Tape & reel
Tube
Tube
Tube
1/17
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Contents
Contents
STB11NM80 - STF11NM80 - STP11NM80 - STW11NM80
1
2
www.DataSheet4U3.com
4
5
6
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
2/17

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STB11NM80 - STF11NM80 - STP11NM80 - STW11NM80
1 Electrical ratings
Electrical ratings
www.DataSheet4U.com
Table 2. Absolute maximum ratings
Symbol
Parameter
VDS Drain-source voltage (VGS = 0)
VGS Gate-source voltage
ID Drain current (continuous) at TC = 25°C
ID
IDM(2)
Drain current (continuous) at TC=100°C
Drain current (pulsed)
PTOT
Total dissipation at TC = 25°C
Derating factor
VISO Insulation withstand voltage (DC)
TJ Operating junction temperature
Tstg Storage temperature
1. Limited only by the maximum temperature allowed
2. Pulse width limited by safe operating area
Table 3. Thermal data
Symbol
Parameter
Rthj-case
Rthj-a
Tl
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Maximum lead temperature for soldering
purpose
Value
TO-220/D²PAK/
Unit
TO-220FP
TO-247
800
±30
11
8
44
150
1.2
--
11 (1)
8 (1)
44 (1)
35
0.28
2500
V
V
A
A
A
W
W/°C
V
-65 to 150
°C
Value
TO-220/D²PAK/
Unit
TO-220FP
TO-247
0.83 3.6 °C/W
62.5 °C/W
300 °C
Table 4. Avalanche characteristics
Symbol
Parameter
Avalanche current, repetitive or not-repetitive
IAS (pulse width limited by Tj Max)
Single pulse avalanche energy
EAS (starting Tj=25°C, Id=Iar, Vdd=50 V)
Value
2.5
400
Unit
A
mJ
3/17

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Electrical characteristics
STB11NM80 - STF11NM80 - STP11NM80 - STW11NM80
2 Electrical characteristics
www.DataSheet4U.com
(TCASE=25°C unless otherwise specified)
Table 5. On/off states
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
V(BR)DSS
Drain-source breakdown
voltage
IDSS
Zero gate voltage drain
current (VGS = 0)
IGSS
VGS(th)
RDS(on)
Gate body leakage current
(VDS = 0)
Gate threshold voltage
Static drain-source on
resistance
ID = 250 µA, VGS= 0
VDS = Max rating,
VDS = Max rating @125°C
VGS = ±30 V
VDS= VGS, ID = 250 µA
VGS= 10 V, ID= 5.5 A
800
3
4
0.35
10
100
100
5
0.40
V
µA
µA
nA
V
Ω
Table 6. Dynamic
Symbol
Parameter
Test conditions
gfs (1)
Forward transconductance
VDS > ID(on) x RDS(on)max,
ID= 7.5A
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS =25 V, f=1 MHz,
VGS=0
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD=640 V, ID = 11 A
VGS =10 V
(see Figure 10)
Rg Gate input resistance
f=1MHz Gate DC Bias=0
Test signal level=20 mV
Open drain
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD=400 V, ID= 5.5 A,
RG=4.7 Ω, VGS=10 V
(see Figure 17)
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
Min. Typ. Max. Unit
8S
1630
750
30
43.6
11.6
21
pF
pF
pF
nC
nC
nC
2.7 Ω
22 ns
17 ns
46 ns
15 ns
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STB11NM80 - STF11NM80 - STP11NM80 - STW11NM80
Electrical characteristics
www.DataSheet4U.com
Table 7. Source drain diode
Symbol
Parameter
Test conditions
ISD Source-drain current
ISDM(1) Source-drain current (pulsed)
VSD(2) Forward on voltage
ISD=11 A, VGS=0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=11 A,
di/dt = 100 A/µs,
VDD=50 V, Tj=25 °C
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=11 A,
di/dt = 100 A/µs,
VDD=50 V, Tj=150 °C
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Min Typ. Max Unit
11 A
44 A
0.86 V
612 ns
7.22 µC
23.6 A
970
11.25
23.2
ns
µC
A
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