K2806-01.pdf 데이터시트 (총 3 페이지) - 파일 다운로드 K2806-01 데이타시트 다운로드

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> Features
- wHwigwh.DCatuaSrrheenett4U.com
- Low On-Resistance
- No Secondary Breakdown
- Low Driving Power
- Avalanche Rated
2SK2806-01
FAP-IIIB Series
N-channel MOS-FET
30V 0,02Ω 35A 30W
> Outline Drawing
> Applications
- Motor Control
- General Purpose Power Amplifier
- DC-DC converters
> Maximum Ratings and Characteristics
- Absolute Maximum Ratings (TC=25°C), unless otherwise specified
Item
Symbol
Rating
Drain-Source-Voltage
Continous Drain Current
Pulsed Drain Current
Gate-Source-Voltage
Maximum Avalanche Energy
Max. Power Dissipation
Operating and Storage Temperature Range
V DS
ID
I D(puls)
V GS
E AV
PD
T ch
T stg
30
35
140
±16
129,3
30
150
-55 ~ +150
* L=0,07mH, VCC=12V
Unit
V
A
A
V
mJ*
W
°C
°C
> Equivalent Circuit
- Electrical Characteristics (TC=25°C), unless otherwise specified
Item
Symbol
Test conditions
Drain-Source Breakdown-Voltage
V (BR)DSS ID=1mA
VGS=0V
Gate Threshhold Voltage
V GS(th)
ID=1mA
VDS=VGS
Zero Gate Voltage Drain Current
I DSS
VDS=30V
Tch=25°C
VGS=0V
Tch=125°C
Gate Source Leakage Current
I GSS
VGS=±16V VDS=0V
Drain Source On-State Resistance
R DS(on)
ID=17,5A
VGS=4V
VGS=10V
Forward Transconductance
g fs
ID=17,5A
VDS=25V
Input Capacitance
C iss
VDS=25V
Output Capacitance
C oss
VGS=0V
Reverse Transfer Capacitance
C rss
f=1MHz
Turn-On-Time ton (ton=td(on)+tr)
t d(on)
VCC=15V
t r ID=35A
Turn-Off-Time toff (ton=td(off)+tf)
t d(off)
VGS=10V
Avalanche Capability
t f RGS=10
I AV L = 100µH Tch=25°C
Diode Forward On-Voltage
V SD
IF=2xIDR VGS=0V Tch=25°C
Reverse Recovery Time
t rr IF=2xIDR VGS=0V
Reverse Recovery Charge
Q rr -dIF/dt=100A/µs Tch=25°C
Min.
30
1,0
16
35
Typ. Max.
1,5
10
0,2
10
0,022
0,014
33
1100
550
240
9
15
75
50
2,0
500
1,0
100
0,03
0,02
1650
830
360
15
23
115
75
0,98 1,71
50
0,08
Unit
V
V
µA
mA
nA
S
pF
pF
pF
ns
ns
ns
ns
A
V
ns
µC
- Thermal Characteristics
Item
Thermal Resistance
Symbol
R th(ch-a)
R th(ch-c)
Test conditions
channel to air
channel to case
Min. Typ. Max. Unit
75 °C/W
4,16 °C/W
Collmer Semiconductor - P.O. Box 702708 - Dallas TX - 75370 - 972.233.1589 - 972.233.0481 Fax - www.collmer.com - 11/98

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N-channel MOS-FET
30V 0,02Ω 35A 30W
> Characteristics
wwTwy.pDicaatlaOSuhtpeuettC4Uha.rcaocmteristics
ID=f(VDS); 80µs pulse test; TC=25°C
2SK2806-01
FAP-IIIB Series
Drain-Source On-State Resistance vs. Tch
RDS(on) = f(Tch); ID=17,5A; VGS=10V
Typical Transfer Characteristics
ID=f(VGS); 80µs pulse test; VDS=25V; Tch=25°C
1
2
3
VDS [V]
Typical Drain-Source On-State-Resistance vs. ID
RDS(on)=f(ID); 80µs pulse test; TC=25°C
Tch [°C]
Typical Forward Transconductance vs. ID
gfs=f(ID); 80µs pulse test; VDS=25V; Tch=25°C
VGS [V]
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch); ID=1mA; VDS=VGS
4
5
6
ID [A]
Typical Capacitances vs. VDS
C=f(VDS); VGS=0V; f=1MHz
7
ID [A]
Typical Gate Charge Characteristic
VGS=f(Qg); ID=35A; TC=25°C
Tch [°C]
Forward Characteristics of Reverse Diode
IF=f(VSD); 80µs pulse test; Tch=25°C
8
↑↑
9
VDS [V]
Maximum Avalanche Energy vs. starting Tch
EAV=f(starting Tch): VCC=12V; IAV 35A
10
Qg [nC]
Safe Operation Area
ID=f(VDS): D=0,01, Tc=25°C
12
VSD [V]
Transient Thermal impedance
Zthch=f(t) parameter:D=t/T
starting Tch [°C]
VDS [V]
This specification is subject to change without notice!
t [s]

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N-channel MOS-FET
30V 0,02Ω 35A 30W
> Characteristics
www.DataSheet4U.com
110
100
90
80
70
60
50
40
30
20
10
0
0
2SK2806-01
FAP-IIIB Series
Power Dissipation
PD=f(TC)
25 50 75 100 125
TC [°C]
150
110
100
90
80
70
60
50
40
30
20
10
0
0
Maximum Avalanche Current vs. starting Tch
IAV=f(starting Tch)
25 50 75 100 125
starting Tch [°C]
150
This specification is subject to change without notice!