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SKW07N120
www.DataSheet4U.com
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
Lower Eoff compared to previous generation
Short circuit withstand time – 10 µs
Designed for:
- Motor controls
- Inverter
- SMPS
NPT-Technology offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
Qualified according to JEDEC1 for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
C
G
E
PG-TO-247-3-1
(TO-247AC)
Type
SKW07N120
VCE
1200V
IC
8A
Eoff
0.7mJ
Tj
150°C
Marking Package
K07N120 PG-TO-247-3-21
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE 1200V, Tj 150°C
Diode forward current
TC = 25°C
TC = 100°C
Diode pulsed current, tp limited by Tjmax
Gate-emitter voltage
Short circuit withstand time2
VGE = 15V, 100V VCC 1200V, Tj 150°C
Power dissipation
TC = 25°C
Operating junction and storage temperature
Soldering temperature,
wavesoldering, 1.6mm (0.063 in.) from case for 10s
Symbol
VCE
IC
ICpuls
-
IF
IFpuls
VGE
tSC
Ptot
Tj , Tstg
Ts
Value
1200
16.5
7.9
27
27
Unit
V
A
13
7
27
±20
10
125
-55...+150
260
V
µs
W
°C
1 J-STD-020 and JESD-022
2 Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
1
Rev. 2_1 Apr 06

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SKW07N120
www.DataSheet4U.com
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction – case
Thermal resistance,
junction – ambient
Symbol
RthJC
RthJCD
RthJA
Conditions
Max. Value
1
2.5
40
Unit
K/W
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Diode forward voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current1)
V(BR)CES
VCE(sat)
VF
VGE(th)
ICES
IGES
gfs
Ciss
Coss
Crss
QGate
LE
IC(SC)
VGE=0V, IC=500µA
VGE = 15V, IC=8A
Tj=25°C
Tj=150°C
VGE=0V, IF=7A
Tj=25°C
Tj=150°C
IC=350µA,VCE=VGE
VCE=1200V,VGE=0V
Tj=25°C
Tj=150°C
VCE=0V,VGE=20V
VCE=20V, IC=8A
VCE=25V,
VGE=0V,
f=1MHz
VCC=960V, IC=8A
VGE=15V
VGE=15V,tSC10µs
100VVCC1200V,
Tj 150°C
min.
1200
2.5
-
-
3
-
-
-
-
-
-
-
-
-
Value
typ.
-
3.1
3.7
2.0
1.75
4
-
-
-
6
720
90
40
70
13
75
Unit
max.
-V
3.6
4.3
2.4
5
µA
100
400
100 nA
-S
870 pF
110
50
90 nC
- nH
-A
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
2
Rev. 2_1 Apr 06

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SKW07N120
www.DataSheet4U.com
Switching Characteristic, Inductive Load, at Tj=25 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during tF
trr
tS
tF
Qrr
Irrm
dirr/dt
Tj=25°C,
VCC=800V,IC=8A,
VGE=15V/0V,
RG=47,
Lσ1)=180nH,
Cσ1)=40pF
Energy losses include
“tail” and diode
reverse recovery.
Tj=25°C,
VR=800V, IF=8A,
diF/dt=400A/µs
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
Value
typ.
27
29
440
21
0.6
0.4
1.0
60
0.3
9
400
Unit
max.
35 ns
38
570
27
0.8 mJ
0.55
1.35
ns
µC
A
A/µs
Switching Characteristic, Inductive Load, at Tj=150 °C
Parameter
Symbol
Conditions
min.
Value
typ.
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Tj=150°C
VCC=800V,
IC=8A,
VGE=15V/0V,
RG=47,
Lσ1)=180nH,
Cσ1)=40pF
Energy losses include
“tail” and diode
reverse recovery.
-
-
-
-
-
-
-
30
26
490
30
1.0
0.7
1.7
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during tF
trr
tS
tF
Qrr
Irrm
dirr/dt
Tj=150°C
VR=800V, IF=8A,
diF/dt=500A/µs
- 170
-
-
- 1.1
- 15
- 110
1) Leakage inductance Lσ and stray capacity Cσ due to dynamic test circuit in figure E.
Unit
max.
36 ns
31
590
36
1.2 mJ
0.9
2.1
ns
µC
A
A/µs
Power Semiconductors
3
Rev. 2_1 Apr 06