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SavantIC Semiconductor
wSwiwl.iDcatoaSnheeNt4PU.cNomPower Transistors
Product Specification
2N5973
DESCRIPTION
·With TO-3 package
·Low collector saturation voltage
·High power dissipations
APPLICATIONS
·Designed for general-purpose power
amplifier and switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
VCBO
VCEO
Collector-base voltage
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current
ICM Collector current-peak
IB Base current
PD Total Power Dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
120
100
5
15
30
5
150
150
-65~200
UNIT
V
V
V
A
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
1.1
UNIT
/W

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SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
Product Specification
2N5973
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ;IB=0
VCEsat-1 Collector-emitter saturation voltge
IC=7A ;IB=0.7A
VCEsat-2 Collector-emitter saturation voltage IC=15A; IB=3.75A
VBEsat
Base-emitter saturation voltage
IC=15A; IB=3.75A
ICEO Collector cut-off current
ICEV Collector cut-off current
ICBO Collector cut-off current
VCE=30V; IB=0
VCE=120V; VBE(off)=1.5V
TC=150
VCB=120V; IE=0
IEBO Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=5A ; VCE=1.5V
hFE-2
DC current gain
IC=15A ; VCE=4V
fT Transition frequency
IC=1A;VCE=10V
MIN TYP. MAX UNIT
100 V
1.0 V
4.0 V
2.5 V
1.0 mA
0.5
5.0
mA
0.5 mA
1.0 mA
25 75
4
4 MHz
2

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SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
PACKAGE OUTLINE
Product Specification
2N5973
Fig.2 outline dimensions (unindicated tolerance:±0.10mm)
3