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STB10NK60Z/-1 - STP10NK60Z/FP
STW10NK60Z
N-CHANNEL 600V-0.65-10A - TO220/FP-D²/I²PAK-TO-247
Zener-Protected SuperMESH™ MOSFET
General features
Type
VDSS RDS(on)
STB10NK60Z
STB10NK60Z-1
STP10NK60ZFP
STP10NK60Z
STW10NK60Z
600 V
600 V
600 V
600 V
600 V
<0.75
<0.75
<0.75
<0.75
<0.75
ID
10 A
10 A
10 A
10 A
10 A
Pw
115
115
35
115
156
s TYPICAL RDS(on) = 0.65
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s GATE CHARGE MINIMIZED
s VERY LOW INTRINSIC CAPACITANCES
s VERY GOOD MANUFACTURING
REPEABILITY
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Such series complements ST full range of high
voltage MOSFETs including revolutionary
MDmesh™ products.
Applications
s HIGH CURRENT, HIGH SPEED SWITCHING
s IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTOR AND PFC
s LIGHTING
Package
3
2
1
TO-220
3
2
1
TO-220FP
3
2
1
TO-247
3
1
D²PAK
123
I²PAK
Internal schematic diagram
July 2005
Rev 1
1/19
www.st.com
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1 Absolute maximum ratings
STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z
www.DataSheet4U.com
1 Absolute maximum ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VDS
VDGR
VGS
ID
Drain-Source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20k)
Gate-Source Voltage
Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM
Note 2
Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
Vesd(G-S) G-S ESD (HBM C=100pF, R=1.5kΩ)
dv/dt
Note 1
Peak Diode Recovery voltage slope
VISO
Insulation Withstand Volatge (DC)
Tj Operating Junction Temperature
Tstg Storage Temperature
Value
TO-220/D²/I²PAK TO-220FP TO-247
600
600
± 30
10
10
(Note 3)
10
5.7
5.7 5.7
(Note 3)
36
36
(Note 3)
36
115
0.92
35
0.28
4000
156
1.25
4.5
Unit
V
V
V
A
A
A
W
W/°C
V
V/ns
--
2500
--
V
-55 to 150
°C
Table 2. Thermal data
Rthj-case
Rthj-pcb
Rthj-amb
Tl
Thermal Resistance Junction-case Max
Thermal Resistance Junction-pcb Max
(when mounted on minimum Footprint)
Thermal Resistance Junction-amb Max
Maximum Lead Temperature For Soldering
Purpose
TO-220
I²PAK
D²PAK TO-220FP TO-247
Unit
1.09
3.6 0.8 °C/W
60 °C/W
62.5
50 °C/W
300 °C
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STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z
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Table 3. Avalanche characteristics
Symbol
Parameter
IAR
Avalanche Current, repetitive or
Not-Repetitive (pulse width limited by Tj max)
Single Pulse Avalanche Energy
EAS (starting Tj=25°C, ID=IAR, VDD= 50V)
EAR
Repetitive Avalanche Energy
(pulse width limited by Tj max)
Table 4. Gate-source zener diode
Symbol
Parameter
Test Conditions
BVGSO
Gate-Source
Igs=±1mA
Breakdown Voltage (Open Drain)
Min.
30
1 Absolute maximum ratings
Max Value
9
300
3.5
Unit
A
mJ
mJ
Typ.
Max.
Unit
V
1.1 PROTECTION FEATURES OF GATE-TO-SOURCE ZENER
DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the
devices ESD capability, but also to make them safely absorb possible voltage transients that
may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the devices
integrity. These integrated Zener diodes thus avoid the usage of external components.
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