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SavantIC Semiconductor
wSwiwl.iDcatoaSnheePt4NU.cPomPower Transistors
Product Specification
2SA648
DESCRIPTION
·With TO-3 package
·Wide area of safe operation
APPLICATIONS
·For low frequency and large power
switching applications
PINNING(see Fig.2)
PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
ICM
PC
Tj
Tstg
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Collector power dissipation
Junction temperature
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
-120
-120
-6
-7
-11
60
150
-55~150
UNIT
V
V
V
A
A
W

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SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ;IB=0
V(BR)CBO Collector-base breakdown voltage IC=-1mA ;IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=-1mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=-5A; IB=-0.5A
VBEsat
Base-emitter saturation voltage
IC=-5A; IB=-0.5A
ICBO Collector cut-off current
VCB=-120V; IE=0
IEBO Emitter cut-off current
VEB=-6V; IC=0
hFE DC current gain
IC=-3A ; VCE=-5V
fT Transition frequency
IC=-1A ; VCE=-5V
Product Specification
2SA648
MIN TYP. MAX UNIT
-120
V
-120
V
-6 V
-2.0 V
-2.5 V
-0.1 mA
-0.1 mA
30 120
10 MHz
2

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SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
PACKAGE OUTLINE
Product Specification
2SA648
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3