2SA670.pdf 데이터시트 (총 3 페이지) - 파일 다운로드 2SA670 데이타시트 다운로드

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SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
DESCRIPTION
·With TO-220 package
·Low collector saturation voltage
APPLICATIONS
·Inverters;converters
·Power amplification
·Switching regulator ,driver
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Product Specification
2SA670
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
VCEO
Collector-base voltage
Collector-emitter voltage
VEBO
IC
PC
Tj
Tstg
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
-50
-50
-5
-3
25
150
-55~150
UNIT
V
V
V
A
W

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SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
Product Specification
2SA670
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ,IB=0 -50 V
V(BR)CBO Collector-base breakdown voltage
IC=-1mA; IE=0
-50 V
V(BR)EBO Emitter-base breakdown voltage
IE=-1mA; IC=0
-5 V
VCEsat Collector-emitter saturation voltage IC=-2A; IB=-0.2A
-1.0 V
ICBO Collector cut-off current
VCB=-50V; IE=0
-100 µA
IEBO Emitter cut-off current
VEB=-5V; IC=0
-100 µA
hFE DC current gain
IC=-1A ; VCE=-4V
35 200
fT Transition frequency
IC=-0.5A ; VCE=-10V
15
MHz
2

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SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
PACKAGE OUTLINE
Product Specification
2SA670
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3